US4411929A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1981-08-18
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Granted: 1983-10-25
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Expires: 2001-08-18
Abstract
Abstract A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 μm or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor device with nitrogen ions using a direct ion beam imaging technique. The ion bombardment layer is converted into an oxidation-resistant layer by annealing, and an insulating oxide layer is formed on the surface of the substrate in regions other than those on which the oxidation-resistant layer is formed by oxidation. Thereafter, contact recesses are formed upon removing the oxidation-resistant layer.
Inventors
- 👤 Shinichi Sato
- 👤 Hiroshi Harada
- 👤 Takaaki Fukumoto
- 👤 Hirozo Takano
- 👤 Hideo Kotani
- 👤 Shinpei Kayano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10P14/40; H10P14/63; H10P14/6302; H10P14/6322; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
62 words
A method of manufacturing a semiconductor device comprising the steps of: forming an ion bombardment layer having a configuration corresponding to a desired contact aperture configuration on at least one predetermined portion on a surface of a semiconductor substrate by direct ion beam imaging; and subjecting said ion bombardment layer to annealing to convert said ion bombardment layer to an oxidation-resistant layer.
Claim 2
Independent Claim
62 words
A method of manufacturing a semiconductor device comprising the steps of: forming an ion bombardment layer having a configuration corresponding to a desired contact aperture configuration on at least one predetermined portion on a surface of a semiconductor substrate by direct ion beam imaging; and subjecting said ion bombardment layer to annealing to convert said ion bombardment layer to an oxidation-resistant layer.
Claim 3
Dependent Claim
20 words
The method for manufacturing a semiconductor device as claimed in claim 1 wherein said semiconductor substrate comprises a silicon substrate.
Claim 4
Dependent Claim
44 words
The method for manufacturing a semiconductor device as claimed in claim 1 or 2 wherein said step of forming an ion bombardment layer comprises bombarding said at least one predetermined portion with nitrogen ions and wherein said oxidation-resistant layer comprises a silicon nitride layer.
Claim 5
Independent Claim
84 words
A method for manufacturing a semiconductor device comprising the steps of: forming an ion bombardment layer having a configuration corresponding to a desired contact aperture configuration on at least one predetermined portion on a surface of a semiconductor substrate selectively by direct ion beam imaging; converting said ion bombardment layer into an oxidation-resistant layer by annealing; forming an insulating oxide layer on said surface in regions other than on said oxidation-resistant layer by oxidation; and forming a contact recess by removing said oxidation-resistant layer.
Claim 6
Independent Claim
84 words
A method for manufacturing a semiconductor device comprising the steps of: forming an ion bombardment layer having a configuration corresponding to a desired contact aperture configuration on at least one predetermined portion on a surface of a semiconductor substrate selectively by direct ion beam imaging; converting said ion bombardment layer into an oxidation-resistant layer by annealing; forming an insulating oxide layer on said surface in regions other than on said oxidation-resistant layer by oxidation; and forming a contact recess by removing said oxidation-resistant layer.
Claim 7
Dependent Claim
22 words
The method for manufacturing a semiconductor device as claimed in claim 4 wherein said insulating oxide layer comprises a silicon oxide layer.
Claim 8
Dependent Claim
34 words
The method for manufacturing a semiconductor device as claimed in claim 4 or 5 wherein said step of forming an ion bombardment layer comprises bombarding said at least one predetermined portion with nitrogen ions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-24 | 1987-04-25 | 1987-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-24 | 1991-04-25 | 1991-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-24 | 1995-04-25 | 1995-10-25 | $7700.00 | Window Closed / Lapsed |