US4016007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a silicon device utilizing ion-implantation and selective oxidation
Assignee: Hitachi Ltd
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Filing: 1976-02-13
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Granted: 1977-04-05
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Expires: 1996-02-13
Abstract
Abstract A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.
Inventors
- 👤 Yasuo Wada
- 👤 Hiroo Usui
- 👤 Mitsumasa Koyanagi
- 👤 Mikio Ashikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:38
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P14/00; H10P14/60; H10P14/61; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6316; H10P14/6322; H10P14/65; H10P14/6502; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/112; Y10S148/113; Y10S148/114; Y10S148/117
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
99 words
A method for fabricating a semiconductor silicon device comprising: 1. growing an thin silicon oxide film by thermal oxidation on a surface of a monocrystal silicon substrate; 2. forming a polycrystalline silicon film at at least one predetermined location on said thin oxide film; 3. implanting nitrogen ions at a dose level greater than 1 × 10 15 cm - 2 in the outer surface of said polycrystalline silicon film and the exposed surface of said thin oxide film; and 4. forming a thick silicon oxide film serving as dielectric isolation structure by wet oxidation of the exposed surfaces.
Claim 2
Independent Claim
99 words
A method for fabricating a semiconductor silicon device comprising: 1. growing an thin silicon oxide film by thermal oxidation on a surface of a monocrystal silicon substrate; 2. forming a polycrystalline silicon film at at least one predetermined location on said thin oxide film; 3. implanting nitrogen ions at a dose level greater than 1 × 10 15 cm - 2 in the outer surface of said polycrystalline silicon film and the exposed surface of said thin oxide film; and 4. forming a thick silicon oxide film serving as dielectric isolation structure by wet oxidation of the exposed surfaces.
Claim 3
Dependent Claim
28 words
A method for fabricating a silicon device according to claim 1, in which the thickness of said thin silicon oxide film is between 10 A and 1 μm.
Claim 4
Dependent Claim
25 words
A method for fabricating a silicon device according to claim 1, in which the thickness of said polycrystalline silicon film is greater than 100 A.
Claim 5
Dependent Claim
25 words
A method for fabricating a silicon device according to claim 1, in which the thickness of said polycrystaline silicon film is from 3000 to 6000.
Claim 6
Dependent Claim
140 words
A method for fabricating a silicon device according to claim 1, further comprising: 5. removing said polycrystalline silicon film except for a central part, where a gate of a MOS type transistor should be formed, by the photolithographic method; 6. diffusing impurity atoms of a conductivity type which is opposite to that of said substrate by using the remaining part of said polycrystalline silicon film and said thick oxide film as a diffusion mask so as to form a source and drain of the MOS type transistor; 7. depositing a phosphosilicate glass layer on the whole surface; 8. removing predetermined regions of said phosphosilicate glass layer; 9. forming an aluminum layer on the whole surface by the vacuum evaporation method; and 10. etching selectively said aluminum layer by the photolithographic method so as to form gate, source and drain electrodes.
Claim 7
Dependent Claim
39 words
A method for fabricating a silicon device according to claim 1, further comprising: 5. removing said polycrystalline silicon film except for a central part, where a gate of a MOS type transistor should be formed, by the photolithographic method;
Claim 8
Dependent Claim
118 words
implanting impurity ions of a conductivity type which is opposite to that of said substrate by accelerating the ions, so that the ions reach said substrate through said thin oxide film but the ions can pass neither through the remaining part of said polycrystalline silicon film nor through said thick oxide film, so as to form a source and drain of the MOS type transistor; 7. depositing a phosphosilicate glass layer on the whole surface; 8. removing predetermined regions of said phosphosilicate glass layer; 9. forming an aluminum layer on the whole surface by the vacuum evaporation method; and 10. etching selectively said aluminum layer by the photolithographic method so as to form gate, source and drain electrodes.
Claim 9
Dependent Claim
118 words
implanting impurity ions of a conductivity type which is opposite to that of said substrate by accelerating the ions, so that the ions reach said substrate through said thin oxide film but the ions can pass neither through the remaining part of said polycrystalline silicon film nor through said thick oxide film, so as to form a source and drain of the MOS type transistor; 7. depositing a phosphosilicate glass layer on the whole surface; 8. removing predetermined regions of said phosphosilicate glass layer; 9. forming an aluminum layer on the whole surface by the vacuum evaporation method; and 10. etching selectively said aluminum layer by the photolithographic method so as to form gate, source and drain electrodes.
Claim 10
Dependent Claim
40 words
A method for fabricating a silicon device according to claim 1, in which the wet oxidation is effected at temperatures of from 1000° to 1100° C and with a water content expressed as a humidity of from 50 to 90%.
Claim 11
Dependent Claim
27 words
A method for fabricating a silicon device according to claim 1, in which the thick silicon oxide film has a thickness of from 0.5 to 20 μm.
Claim 12
Independent Claim
182 words
A method for fabricating a bipolar silicon device comprising: 1. diffusing an n conductivity type impurity at a predetermined region on a surface of a p-conductivity type silicon substrate; 2. growing an n conductivity type epitaxial layer, said n conductivity type impurity diffusing into a bottom portion of said epitaxial layer so as to form a high impurity concentration buried layer; 3. growing an thin oxide film by thermal oxidation on a surface of said epitaxial layer; 4. forming a polycrystalline silicon film at a predetermined location on said thin oxide film, which is over said high impurity concentration buried layer; 5. implanting nitrogen ions at a dose level greater than 1 × 10 15 cm - 2 in the outer surface of said polycrystalline silicon layer and the exposed surface of said thin oxide film; 6. forming a thick oxide film reaching said high impurity concentration buried layer by wet oxidation of the surfaces so as to form an isolated n conductivity type region; and 7. forming an emitter, a base and a collector in said isolated region by thermal diffusion.
Claim 13
Independent Claim
182 words
A method for fabricating a bipolar silicon device comprising: 1. diffusing an n conductivity type impurity at a predetermined region on a surface of a p-conductivity type silicon substrate; 2. growing an n conductivity type epitaxial layer, said n conductivity type impurity diffusing into a bottom portion of said epitaxial layer so as to form a high impurity concentration buried layer; 3. growing an thin oxide film by thermal oxidation on a surface of said epitaxial layer; 4. forming a polycrystalline silicon film at a predetermined location on said thin oxide film, which is over said high impurity concentration buried layer; 5. implanting nitrogen ions at a dose level greater than 1 × 10 15 cm - 2 in the outer surface of said polycrystalline silicon layer and the exposed surface of said thin oxide film; 6. forming a thick oxide film reaching said high impurity concentration buried layer by wet oxidation of the surfaces so as to form an isolated n conductivity type region; and 7. forming an emitter, a base and a collector in said isolated region by thermal diffusion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-04 | 1980-10-04 | 1981-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-04 | 1984-10-04 | 1985-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-04 | 1988-10-04 | 1989-04-05 | $7700.00 | Window Closed / Lapsed |