US4682408A
Expired / Lapsed
US
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Method for making field oxide region with self-aligned channel stop implantation
Assignee: Panasonic Holdings Corp
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Filing: 1986-04-01
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Granted: 1987-07-28
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Expires: 2006-04-01
Abstract
Abstract A process is described for forming semiconductor device which include forming step of coating of silicon oxide derivative before ion implanting step: The coating prevents unnecessary extention of channel stop regions thus produces high speed and high current drive ability of produced semiconductor device.
Inventors
- 👤 Koji Takebayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10P14/63; H10P14/6302; H10P14/6322; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/07; Y10S148/085; Y10S438/00; Y10S438/975; Y10S438/978
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
147 words
Method for making semiconductor device comprising the steps of: forming a film of silicon dioxide on a semiconductor substrate of one conductivity, forming a film of silicon nitride on said film of silicon dioxide, selectively removing said film of silicon nitride to make an opening to expose surface of said film of silicon oxide, forming a coating of a silicon oxide derivative on all the surface of said substrate, heat-treating the substrate thereby to change said coating to film of silicon dioxide, implanting ions of said one conductivity into said substrate through said films of silicon dioxide thereby to form an ion implanted region, removing said film of silicon dioxide changed from said coating, selectively oxidizing said substrate by using said film of silicon nitride as a mask, to form selectively oxidized region as isolation region having channel stopper region only under said selectively formed oxide film.
Claim 2
Dependent Claim
147 words
Method for making semiconductor device comprising the steps of: forming a film of silicon dioxide on a semiconductor substrate of one conductivity, forming a film of silicon nitride on said film of silicon dioxide, selectively removing said film of silicon nitride to make an opening to expose surface of said film of silicon oxide, forming a coating of a silicon oxide derivative on all the surface of said substrate, heat-treating the substrate thereby to change said coating to film of silicon dioxide, implanting ions of said one conductivity into said substrate through said films of silicon dioxide thereby to form an ion implanted region, removing said film of silicon dioxide changed from said coating, selectively oxidizing said substrate by using said film of silicon nitride as a mask, to form selectively oxidized region as isolation region having channel stopper region only under said selectively formed oxide film.
Claim 3
Dependent Claim
24 words
Method for making semiconductor device in accordance with claim 1, said silicon oxide derivative is silanol film which consists of silanol as chief ingredient.
Claim 4
Dependent Claim
169 words
Method for making semiconductor device comprising the steps of: forming a film of silicon dioxide on a semiconductor substrate of one conductivity, forming a film of silicon nitride on said film of silicon dioxide, forming a photo resist on said film of silicon nitride, selectively removing said film of silicon nitride to make an opening to expose surface of said film of silicon oxide by using said photo resist as a mask, forming a coating of a silicon oxide derivative on all the surface of said substrate, heat-treating the substrate thereby to change said coating to film of silicon dioxide, implanting ions of said one conductivity into said substrate through said films of silicon dioxide thereby to form an ion implanted region, removing said photo resist and said film of silicon dioxide changed from said coating, selectively oxidizing said substrate by using said film of silicon nitride as a mask, to form selectively oxidized region as isolation region having channel stopper region only under said selectively formed oxide film.
Claim 5
Dependent Claim
169 words
Method for making semiconductor device comprising the steps of: forming a film of silicon dioxide on a semiconductor substrate of one conductivity, forming a film of silicon nitride on said film of silicon dioxide, forming a photo resist on said film of silicon nitride, selectively removing said film of silicon nitride to make an opening to expose surface of said film of silicon oxide by using said photo resist as a mask, forming a coating of a silicon oxide derivative on all the surface of said substrate, heat-treating the substrate thereby to change said coating to film of silicon dioxide, implanting ions of said one conductivity into said substrate through said films of silicon dioxide thereby to form an ion implanted region, removing said photo resist and said film of silicon dioxide changed from said coating, selectively oxidizing said substrate by using said film of silicon nitride as a mask, to form selectively oxidized region as isolation region having channel stopper region only under said selectively formed oxide film.
Claim 6
Dependent Claim
24 words
Method for making semiconductor device in accordance with claim 3, said silicon oxide derivative is silanol film which consists of silanol as chief ingredient.
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