Silicon nitride formation and use in self-aligned semiconductor device manufacturing method

Claim 1

A new method of forming and using a silicon nitride coating on a silicon surface portion comprising the steps of coating a silicon surface part with a layer of silicon oxide prior to heating the silicon body in an oxidizing atmosphere, wet or dry etching a window area in the silicon oxide layer over a selected portion of the silicon surface to at least thin it enough to be useful as a mask, ion milling the silicon oxide layer for at least about 20 seconds with nitrogen ions to remove any residual silicon oxide in the window area and to coincidentally implant nitrogen atoms in an ion milled silicon surface portion to a depth of up to about 100 angstroms using silicon oxide layer portions outside the window area as a mask, heating the ion milled silicon surface portion in an atmosphere consisting essentially of nitrogen, effective to produce a silicon nitride coating on the milled silicon surface portion that is useful in preventing the silicon surface portion exposed in the window area from oxidizing when other portions of the silicon surface are oxidized, then heating the silicon body in an oxidizing atmosphere, and thereafter selectively removing the silicon nitride coating by means of an etchant that preferentially attacks silicon nitride rather than silicon oxide.

Claim 5

A method of making an electrode on an electrical contact area of a silicon semiconductor region through a reflowable and rapidly etchable silicon oxide layer, that permits reflow of the layer after etching of a contact window in it without reforming silicon oxide in the contact window during reflow, and comprising the steps of etching a contact window in the reflowable and rapidly etchable silicon oxide layer, subjecting the window to milling by means of nitrogen ions for sufficient duration to not only remove any residual silicon oxide that may be on the contact area within the window but to also implant nitrogen atoms into the contact area to a depth of about 100 angstroms, heating the contact area in an atmosphere consisting essentially of nitrogen to produce a silicon nitride coating in situ that is capable of protecting the contact area from oxidation during succeeding process steps, reflowing the silicon oxide layer in an oxidizing atmosphere, etching away the silicon nitride coating with a selective etchant, forming a blanket layer of metal on the reflowable layer and the contact area, masking the metal layer in accordance with a predetermined pattern, and etching exposed metal away to delineate a metallization pattern on the reflowable layer and the contact area.

Claim 6

A method of making an electrode on an electrical contact area of a silicon semiconductor region through a reflowable and rapidly etchable silicon oxide layer, that permits reflow of the layer after etching of a contact window in it without reforming silicon oxide in the contact window during reflow, and comprising the steps of etching a contact window in the reflowable and rapidly etchable silicon oxide layer, subjecting the window to milling by means of nitrogen ions for sufficient duration to not only remove any residual silicon oxide that may be on the contact area within the window but to also implant nitrogen atoms into the contact area to a depth of about 100 angstroms, heating the contact area in an atmosphere consisting essentially of nitrogen to produce a silicon nitride coating in situ that is capable of protecting the contact area from oxidation during succeeding process steps, reflowing the silicon oxide layer in an oxidizing atmosphere, etching away the silicon nitride coating with a selective etchant, forming a blanket layer of metal on the reflowable layer and the contact area, masking the metal layer in accordance with a predetermined pattern, and etching exposed metal away to delineate a metallization pattern on the reflowable layer and the contact area.