US4353936A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1979-02-27
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Granted: 1982-10-12
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Expires: 1999-02-27
Abstract
Abstract A silicon nitride film is generated by heating a silicon substrate having an exposed surface in an ambient including ammonia thereby causing the exposed silicon to react with nitrogen atoms. The substrate is heated to a temperature of at least 900° C. in an inert gas, such as argon, whereby the natural oxide film or impurity particles on the surface are subject to vapor etching. The substrate is then heated to a temperature in a range of 900° C. to 1300° C. in the ambient, including ammonia, to produce a dense and homogeneous amorphous silicon nitride film.
Inventors
- 👤 Takao Nozaki
- 👤 Takashi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6322; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6512; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/909; Y10S438/974
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
105 words
A method of manufacturing a semiconductor device in a reaction chamber, said method comprising the steps of preparing a silicon substrate having an exposed surface in the reaction chamber; initially heating the substrate in said reaction chamber to a temperature sufficient for vapor etching said surface in an inert atmosphere substantially free from oxidative gases; and thereafter heating said substrate to a temperature sufficient for the deposition of a film of silicon nitride on said surface in said reaction chamber in an atmosphere including ammonia and substantially free from other compound gases by direct reaction of nitrogen of said ammonia and silicon of said substrate.
Claim 2
Independent Claim
105 words
A method of manufacturing a semiconductor device in a reaction chamber, said method comprising the steps of preparing a silicon substrate having an exposed surface in the reaction chamber; initially heating the substrate in said reaction chamber to a temperature sufficient for vapor etching said surface in an inert atmosphere substantially free from oxidative gases; and thereafter heating said substrate to a temperature sufficient for the deposition of a film of silicon nitride on said surface in said reaction chamber in an atmosphere including ammonia and substantially free from other compound gases by direct reaction of nitrogen of said ammonia and silicon of said substrate.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1, wherein said substrate is initially heated to at least 900° C.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 1, wherein said inert atmosphere consists of at least one element selected from the group consisting of argon gas and helium gas.
Claim 5
Dependent Claim
22 words
A method as claimed in claim 1, wherein oxidative impurities in said atmosphere including ammonia are reduced to a maximum of 0.01%.
Claim 6
Dependent Claim
29 words
A method as claimed in claim 1, wherein said substrate is heated in said atmosphere including ammonia to a temperature in a range from 900° C. to 1300° C.
References Cited (Backward Citations)
US3652324A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-11 | 1986-04-12 | 1986-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-11 | 1990-04-12 | 1990-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-11 | 1994-04-12 | 1994-10-12 | $7700.00 | Window Closed / Lapsed |