US3745429A
Expired / Lapsed
US
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Controllable junction device and radiationgenerating method of utilizing it
Assignee: Iwatsu Electric Co Ltd
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Filing: 1971-06-23
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Granted: 1973-07-10
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Expires: 1991-06-23
Abstract
Abstract A controllable junction device and a radiation-generating method of utilizing said device; more particularly, a controllable junction device which usually functions as a resistor but is also able to operate as a transistor or diode. In addition, there is disclosed a radiation-generating method which uses such device to produce radiations of a higher energy than radiations to which it is exposed.
Inventors
- 👤 Y Fujishiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:24
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
122 words
A controllable junction device comprising a semiconductor body characterized by a substantial energy band gap, a first electrode in ohmic-contact with a first region of said body containing first impurities of one conductivity type, and a second electrode in ohmic-contact with a second region of said body containing second impurities of another conductivity type and said first impurities of said one conductivity type, said second impurities having a relatively deep energy level in said energy band gap as compared with the energy level of said first impurities in said energy band gap such that said body is characterized by said one conductivity type in both regions at thermal equilibrium and said other conductivity type in said second region when light impinges thereon.
Claim 2
Dependent Claim
122 words
A controllable junction device comprising a semiconductor body characterized by a substantial energy band gap, a first electrode in ohmic-contact with a first region of said body containing first impurities of one conductivity type, and a second electrode in ohmic-contact with a second region of said body containing second impurities of another conductivity type and said first impurities of said one conductivity type, said second impurities having a relatively deep energy level in said energy band gap as compared with the energy level of said first impurities in said energy band gap such that said body is characterized by said one conductivity type in both regions at thermal equilibrium and said other conductivity type in said second region when light impinges thereon.
Claim 3
Dependent Claim
23 words
The system of claim 1 wherein said one conductivity is of an n type and said other conductivity is of a p type.
Claim 4
Dependent Claim
23 words
The system of claim 1 wherein said one conductivity is of a p type and said other conductivity is of an n type.
Claim 5
Dependent Claim
124 words
A controllable junction device comprising a semiconductor body characterized by a substantial energy band gap, at least two electrodes in ohmic-contact with at least two regions of said body containing first impurities of one conductivity type, at least one other electrode in ohmic-contact with at least one other region of said body containing second impurities of another conductivity type and said first impurities, said second impurities having a relatively deep energy level in said energy band gap as compared with the energy level of said first impurities such that said body is characterized by said one conductivity type in second two regions and said other region at thermal equilibrium and inverted to said other conductivity type in said other region when light impinges thereon.
Claim 6
Dependent Claim
124 words
A controllable junction device comprising a semiconductor body characterized by a substantial energy band gap, at least two electrodes in ohmic-contact with at least two regions of said body containing first impurities of one conductivity type, at least one other electrode in ohmic-contact with at least one other region of said body containing second impurities of another conductivity type and said first impurities, said second impurities having a relatively deep energy level in said energy band gap as compared with the energy level of said first impurities such that said body is characterized by said one conductivity type in second two regions and said other region at thermal equilibrium and inverted to said other conductivity type in said other region when light impinges thereon.
Claim 7
Dependent Claim
23 words
The system of claim 4 wherein said one conductivity is of the n type and said other conductivity is of the p type.
Claim 8
Dependent Claim
23 words
The system of claim 4 wherein said one conductivity is of the p type and said other conductivity is of the n type.
Claim 9
Independent Claim
146 words
A method of operating a controllable junction device comprising a semiconductor body having a substantial energy band gap, a first region of said body containing impurities of one conductivity and a second region of said body containing impurities of said one conductivity type and another conductivity type, said impurites of said other conductivity type having a deep energy level in said band gap relative to the energy level of said one conductivity type such that said body is characterized by said one conductivity type in both regions at thermal equilibrium, the method comprising the steps of: irradiating said second region with light thereby inverting said second region to a conductivity of said other type; and applying a bias between said first region and said second region whereby said device emits radiation of higher energy level than the energy level of said light irradiating said second region.
Claim 10
Independent Claim
146 words
A method of operating a controllable junction device comprising a semiconductor body having a substantial energy band gap, a first region of said body containing impurities of one conductivity and a second region of said body containing impurities of said one conductivity type and another conductivity type, said impurites of said other conductivity type having a deep energy level in said band gap relative to the energy level of said one conductivity type such that said body is characterized by said one conductivity type in both regions at thermal equilibrium, the method comprising the steps of: irradiating said second region with light thereby inverting said second region to a conductivity of said other type; and applying a bias between said first region and said second region whereby said device emits radiation of higher energy level than the energy level of said light irradiating said second region.
Claim 11
Dependent Claim
16 words
The method of claim 7 wherein the irradiation is varied by varying the intensity of irradiation.
Claim 12
Dependent Claim
16 words
The method of claim 7 wherein the irradiation is varied by varying the area of irradiation.
Claim 13
Dependent Claim
19 words
The method of claim 7 wherein a reverse bias is applied between said first region And said second region.
Claim 14
Dependent Claim
19 words
The method of claim 7 wherein a forward bias is applied between said first region and said second region.
Claim 15
Independent Claim
161 words
A method of operating a controllable junction device comprising a semiconductor body having a particular energy band gap with at least two regions of said body containing impurities of one conductivity type and at least one other region located between said two regions containing impurities of another conductivity type, said impurities of said other conductivity type having a relatively deep energy level in said band gap as compared with the energy level of said impurities of said one conductivity type such that said semiconductor body is characterized by said one conductivity type in all said regions at thermal equilibrium, the method comprising the steps of: applying a reverse bias between the first of said two regions and said other region; applying a forward bias between the second of said two regions and said other region; and irradiating said other region with light, said device emitting radiation of higher energy level than the energy level of said light irradiating said other region.
Claim 16
Independent Claim
161 words
A method of operating a controllable junction device comprising a semiconductor body having a particular energy band gap with at least two regions of said body containing impurities of one conductivity type and at least one other region located between said two regions containing impurities of another conductivity type, said impurities of said other conductivity type having a relatively deep energy level in said band gap as compared with the energy level of said impurities of said one conductivity type such that said semiconductor body is characterized by said one conductivity type in all said regions at thermal equilibrium, the method comprising the steps of: applying a reverse bias between the first of said two regions and said other region; applying a forward bias between the second of said two regions and said other region; and irradiating said other region with light, said device emitting radiation of higher energy level than the energy level of said light irradiating said other region.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-09 | 1977-01-08 | 1977-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-09 | 1981-01-08 | 1981-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-09 | 1985-01-08 | 1985-07-10 | $7700.00 | Window Closed / Lapsed |