Patent US4822636A successfully refreshed from Google Patents.
US4822636A
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Method for forming deposited film
Assignee: Canon Inc
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Filing: 1986-12-16
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Granted: 1989-04-18
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Expires: 2006-12-16
Abstract
Abstract A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.
Inventors
- 👤 Keishi Saitoh
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
171 words
A method for forming a deposited film on a substrate by introducing into a reaction space a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 having the property of oxidation action on said non-activated gaseous starting material to form a deposited film by a direct chemical reaction between said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, comprising: (a) activating a gaseous substance (D) which includes a component to act as a valence electron controller in an activation space separate from said reaction space to form an activated species; and (b) introducing said activated species into the reaction space so as to form a mixture with said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent and form a deposited film controlled in valence electron on said substrate without the use of external discharge energy in the reaction space.
Claim 2
Independent Claim
171 words
A method for forming a deposited film on a substrate by introducing into a reaction space a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 having the property of oxidation action on said non-activated gaseous starting material to form a deposited film by a direct chemical reaction between said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, comprising: (a) activating a gaseous substance (D) which includes a component to act as a valence electron controller in an activation space separate from said reaction space to form an activated species; and (b) introducing said activated species into the reaction space so as to form a mixture with said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent and form a deposited film controlled in valence electron on said substrate without the use of external discharge energy in the reaction space.
Claim 3
Dependent Claim
17 words
A method for forming a deposited film according to claim 1, wherein luminescence is accompanied during formation.
Claim 4
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a chain silane compound.
Claim 5
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a straight chain silane compound.
Claim 6
Dependent Claim
34 words
A method for forming a deposited film according to claim 4, wherein said straight chain silane compound is represented by the formula Si n H 2n+2 (n is an integer of 1 to 8).
Claim 7
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a branched chain silane compound.
Claim 8
Dependent Claim
26 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.
Claim 9
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a chain germanium compound.
Claim 10
Dependent Claim
33 words
A method for forming a deposited film according to claim 8, wherein said chain germanium compound is represented by the formula Ge m H 2m+2 (m is an integer of 1 to 5).
Claim 11
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a hydrogenated tin compound.
Claim 12
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a tetrahedral type compound.
Claim 13
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent is selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 .
Claim 14
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine gas.
Claim 15
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains chlorine gas.
Claim 16
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine atoms as the constituents.
Claim 17
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains a halogen under nascent state.
Claim 18
Dependent Claim
41 words
A method for forming a deposited film according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.
Claim 19
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.
Claim 20
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) contains an element in the group IIIA of the periodic table.
Claim 21
Dependent Claim
29 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is diborane (B 2 H 6 ) or boron fluoride (BF 3 ).
Claim 22
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) contains an element in the group VA of the periodic table.
Claim 23
Dependent Claim
31 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is phosphine (PH 3 ), phosphorus pentafluoride (PF 5 ) or arsine (AsH 3 ).
Claim 24
Dependent Claim
40 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is diluted with at least one gas among H 2 , He, Ne, Ar, Kr, Xe, and Rn before introduction into the activation space.
Claim 25
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein discharging, light or heat energy is utilized as the activation method in said activation space.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |