US4328261A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallizing semiconductor devices
Assignee: ITT Inc
•
Filing: 1980-10-23
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Granted: 1982-05-04
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Expires: 2000-10-23
Abstract
Abstract Silicon semiconductor devices, e.g. integrated circuits are metallized with a silicon/aluminum alloy by exposure to silane and an aluminum alkyl vapour at an elevated temperature and reduced pressure. The process eliminates the prior hydrogen plasma treatment and subsequent annealing of conventional vacuum deposition of aluminum and provides good step and crack coverage.
Inventors
- 👤 Rudolf A. H. Heinecke
- 👤 Ronald C. Stern
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/20; C23C16/22; C23C16/30; C23C16/42; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
69 words
A process for metallizing a semiconductor device with an aluminum/silicon alloy film, the process including exposing the device to a substantially homogeneous mixture of an aluminum alkyl vapour and silane at a temperature between 250° and 500° C. and at a reduced pressure to cause spontaneous deposition from said mixture of an aluminum/silicon alloy film comprising aluminum containing just enough silicon to saturate said aluminum at the deposition temperature.
Claim 2
Dependent Claim
69 words
A process for metallizing a semiconductor device with an aluminum/silicon alloy film, the process including exposing the device to a substantially homogeneous mixture of an aluminum alkyl vapour and silane at a temperature between 250° and 500° C. and at a reduced pressure to cause spontaneous deposition from said mixture of an aluminum/silicon alloy film comprising aluminum containing just enough silicon to saturate said aluminum at the deposition temperature.
Claim 3
Dependent Claim
28 words
A process as claimed in claim 1 and wherein the alloy coating is deposited on the semiconductor device at a temperature within the range 300° to 400° C.
Claim 4
Dependent Claim
23 words
A process as claimed in claim 1 or 2 and in which the aluminum alkyl/silane vapour mixture is diluted with an inert gas.
Claim 5
Dependent Claim
18 words
A process as claimed in claim 1 or 2, and in which the aluminum alkyl/silane mixture includes hydrogen.
Claim 6
Dependent Claim
51 words
A process as claimed in claim 1, including exposing the device at a temperature of 350° C. and a pressure of 4 torr to a substantially homogeneous mixture of silane and tri-isobutyl aluminum (TIBA), the silane and TIBA being admitted to the atmosphere surrounding the device at substantially equal flow rate.
Claim 7
Dependent Claim
26 words
A process as claimed in claim 1 or 2 and in which the partial pressure of silane is in the range of 0.25 to 0.3 torr.
Claim 8
Dependent Claim
28 words
A process as claimed in claim 1 and in which the aluminum alkyl is selected from the group consisting of tri-isobutyl aluminum, di-isobutyl aluminum hydride, or mixtures thereof.
Claim 9
Dependent Claim
41 words
A process as claimed in claim 1 and wherein an inert gas is periodically supplied to the region surrounding the device or devices so as to disperse the vapour phase reaction products, the gas pressure exceeding the vapour pressure of alkyl.
Claim 10
Dependent Claim
25 words
A process as claimed in claim 1 and in which the aluminum alkyl vapour is provided by evaporation from a quantity of the liquid alkyl.
Claim 11
Dependent Claim
24 words
A process as claimed in claim 1 and in which the silicon device is cleaned by exposure to an active vapour prior to metallization.
Claim 12
Dependent Claim
17 words
A process as claimed in claim 1 and wherein the aluminum alkyl is dispersed from an evaporator.
Claim 13
Dependent Claim
21 words
A process as claimed in claim 1 and wherein the aluminum alkyl is dispersed in liquid form from an atomizing device.
Claim 14
Dependent Claim
33 words
A process as claimed in claim 1 and in which the surface of the semiconductor device is activated by exposure to titanium tetrachloride prior to exposure to said aluminum alkyl vapour containing silane.
Claim 15
Dependent Claim
13 words
A process as claimed in claim 1 wherein the semiconductor device is silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-03 | 1985-11-02 | 1986-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-03 | 1989-11-02 | 1990-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-03 | 1993-11-02 | 1994-05-04 | $7700.00 | Window Closed / Lapsed |