Method of gas plating adherent coatings on silicon

Claim 1

A METHOD OF GAS PLATING ADHERENT COATINGS ON SILICON BY THERMAL DECOMPOSITION OF GASEOUS COMPOUNDS, AND WHICH COMPRISES THE STEPS OF ETCHING THE SURFACE OF THE SILICON WITH ACID TO PRESENT A CLEAN SURFACE, SUBJECTING THE RESULTANT SILICON SURFACE WHILE IN THE ABSENCE OF OXYGEN TO A GASEOUS ATMOSPHERE CONTAINING HYDROGEN HALIDE GAS WHILE HEATING SAID SILICON, WITHDRAWING THE GASEOUS ATMOSPHERE WHILE MAINTAINING THE SILICON FREE OF OXIDATION, THEREAFTER TREATING THE SURFACE BY EXPOSING THE SAME TO A GASEOUS MEDIUM CONTAINING GAS WHICH IS ADSORBED BUT READILY DESORBED DURING INITIATION OF SAID GAS PLATING, AND EXPOSING THE SAID SURFACE OF THE HEATED SILICON TO A GASEOUS MIXTURE CONTAINING LESS THAN 10% BY VOLUME OF A GASEOUS HEAT-DECOMPOSABLE COMPOUND AND WHEREIN THE TEMPERATURE OF SAID SILICONSURFACE IS MAINTAINED HIGH ENOUGH TO CAUSE SAID HEAT-DECOMPOSABLE COMPOUND TO DECOMPOSE AND DEPOSIT A COATING ONTO SAID SILICON SURFACE, AND WHEREIN SAID DESORBABLE GAS IS AMMONIA.

Claim 2

A METHOD OF GAS PLATING ADHERENT COATINGS ON SILICON BY THERMAL DECOMPOSITION OF GASEOUS COMPOUNDS, AND WHICH COMPRISES THE STEPS OF ETCHING THE SURFACE OF THE SILICON WITH ACID TO PRESENT A CLEAN SURFACE, SUBJECTING THE RESULTANT SILICON SURFACE WHILE IN THE ABSENCE OF OXYGEN TO A GASEOUS ATMOSPHERE CONTAINING HYDROGEN HALIDE GAS WHILE HEATING SAID SILICON, WITHDRAWING THE GASEOUS ATMOSPHERE WHILE MAINTAINING THE SILICON FREE OF OXIDATION, THEREAFTER TREATING THE SURFACE BY EXPOSING THE SAME TO A GASEOUS MEDIUM CONTAINING GAS WHICH IS ADSORBED BUT READILY DESORBED DURING INITIATION OF SAID GAS PLATING, AND EXPOSING THE SAID SURFACE OF THE HEATED SILICON TO A GASEOUS MIXTURE CONTAINING LESS THAN 10% BY VOLUME OF A GASEOUS HEAT-DECOMPOSABLE COMPOUND AND WHEREIN THE TEMPERATURE OF SAID SILICONSURFACE IS MAINTAINED HIGH ENOUGH TO CAUSE SAID HEAT-DECOMPOSABLE COMPOUND TO DECOMPOSE AND DEPOSIT A COATING ONTO SAID SILICON SURFACE, AND WHEREIN SAID DESORBABLE GAS IS AMMONIA.