US3870558A
Expired / Lapsed
US
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Process for preparing a layer of compounds of groups II and VI
Assignee: TOKYO SHIBOURO ELECTRIC CO Ltd
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Filing: 1973-06-08
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Granted: 1975-03-11
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Expires: 1993-06-08
Abstract
Abstract A process for preparing a layer of compounds of Groups II and VI characterized in that a layer of the compounds is formed on the surface of a substrate, and the formed layer is heat-treated in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of said inert gas and vapour of at least one element selected from a group consisting of sulfur, selenium and tellurium so that uniform grain growth with a narrow range grain size distribution is effected.
Inventors
- 👤 Kazuo Shimizu
- 👤 Okio Yoshida
- 👤 Kazuo Terakawa
- 👤 Satoshi Aihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:17
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
75 words
A process for preparing a composite layer consisting of a CdS layer and a CdSe layer which comprises forming said composite layer on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of said inert gas and vapour selected from the group consisting of selenium, sulfur and mixtures of sulfur with selenium, whereby uniform-grain growth with narrow range grain size distribution is effected.
Claim 2
Dependent Claim
75 words
A process for preparing a composite layer consisting of a CdS layer and a CdSe layer which comprises forming said composite layer on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of said inert gas and vapour selected from the group consisting of selenium, sulfur and mixtures of sulfur with selenium, whereby uniform-grain growth with narrow range grain size distribution is effected.
Claim 3
Dependent Claim
66 words
A process for preparing a layer of Group II-VI compound which comprises forming a layer of cadmium selenide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of said inert gas and vapour of sulfur or mixtures of sulfur with selenium, whereby uniform grain growth with narrow range grain size distribution is effected.
Claim 4
Dependent Claim
66 words
A process for preparing a layer of Group II-VI compound which comprises forming a layer of cadmium selenide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of said inert gas and vapour of sulfur or mixtures of sulfur with selenium, whereby uniform grain growth with narrow range grain size distribution is effected.
Claim 5
Dependent Claim
53 words
A PROCESS FOR PREPARING A LAYER OF GROUP II-VI COMPOUND WHICH COMPRISES FORMING A LAYER OF CADMIUM SELENIDE ON A SUBSTRATE PLATE AND HEAT-TREATING IT IN AN ATMOSPHERE COMPRISING AN INERT GAS, 0.1-10% BY VOLUME OF OXYGEN ON THE GASES OF SAID INERT GAS AND VAPOUR OF SULFUR OR MIXTURES OF SULFUR WITH
Claim 6
Dependent Claim
53 words
A PROCESS FOR PREPARING A LAYER OF GROUP II-VI COMPOUND WHICH COMPRISES FORMING A LAYER OF CADMIUM SELENIDE ON A SUBSTRATE PLATE AND HEAT-TREATING IT IN AN ATMOSPHERE COMPRISING AN INERT GAS, 0.1-10% BY VOLUME OF OXYGEN ON THE GASES OF SAID INERT GAS AND VAPOUR OF SULFUR OR MIXTURES OF SULFUR WITH
Claim 7
Dependent Claim
66 words
A process for preparing a layer of a Group II-VI compound which comprises forming a layer of cadmium sulfide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour of selenium or mixtures of selenium with sulfur, whereby uniform grain growth with narrow grain size distribution is effected.
Claim 8
Dependent Claim
66 words
A process for preparing a layer of a Group II-VI compound which comprises forming a layer of cadmium sulfide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour of selenium or mixtures of selenium with sulfur, whereby uniform grain growth with narrow grain size distribution is effected.
Claim 9
Dependent Claim
69 words
A process for preparing a layer of a Group II-VI compound which comprises forming a layer of cadmium sulfoselenide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour selected from the group consisting of selenium, sulfur and mixtures thereof, whereby uniform grain growth with narrow grain size distribution is effected.
Claim 10
Dependent Claim
69 words
A process for preparing a layer of a Group II-VI compound which comprises forming a layer of cadmium sulfoselenide on a substrate plate and heat-treating it in an atmosphere comprising an inert gas, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour selected from the group consisting of selenium, sulfur and mixtures thereof, whereby uniform grain growth with narrow grain size distribution is effected.
Claim 11
Dependent Claim
45 words
The process of claim 2 wherein said atmosphere consists essentially of an inert gas selected from the group consisting of nitrogen and argon, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour of sulfur or mixtures of sulfur with selenium.
Claim 12
Dependent Claim
45 words
The process of claim 3 wherein said atmosphere consists essentially of an inert gas selected from the group consisting of nitrogen and argon, 0.1-10% by volume of oxygen on the basis of the inert gas and vapour of selenium or mixtures of selenium with sulfur.
References Cited (Backward Citations)
US3793069A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-10 | 1978-09-09 | 1979-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-10 | 1982-09-09 | 1983-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-10 | 1986-09-09 | 1987-03-11 | $7700.00 | Window Closed / Lapsed |