US4822636A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming deposited film
Assignee: Canon Inc
•
Filing: 1986-12-16
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Granted: 1989-04-18
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Expires: 2006-12-16
Abstract
Abstract A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.
Inventors
- 👤 Keishi Saitoh
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
171 words
A method for forming a deposited film on a substrate by introducing into a reaction space a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 having the property of oxidation action on said non-activated gaseous starting material to form a deposited film by a direct chemical reaction between said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, comprising: (a) activating a gaseous substance (D) which includes a component to act as a valence electron controller in an activation space separate from said reaction space to form an activated species; and (b) introducing said activated species into the reaction space so as to form a mixture with said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent and form a deposited film controlled in valence electron on said substrate without the use of external discharge energy in the reaction space.
Claim 2
Independent Claim
171 words
A method for forming a deposited film on a substrate by introducing into a reaction space a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 , and I 2 having the property of oxidation action on said non-activated gaseous starting material to form a deposited film by a direct chemical reaction between said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, comprising: (a) activating a gaseous substance (D) which includes a component to act as a valence electron controller in an activation space separate from said reaction space to form an activated species; and (b) introducing said activated species into the reaction space so as to form a mixture with said non-activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent and form a deposited film controlled in valence electron on said substrate without the use of external discharge energy in the reaction space.
Claim 3
Dependent Claim
17 words
A method for forming a deposited film according to claim 1, wherein luminescence is accompanied during formation.
Claim 4
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a chain silane compound.
Claim 5
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a straight chain silane compound.
Claim 6
Dependent Claim
34 words
A method for forming a deposited film according to claim 4, wherein said straight chain silane compound is represented by the formula Si n H 2n+2 (n is an integer of 1 to 8).
Claim 7
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a branched chain silane compound.
Claim 8
Dependent Claim
26 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.
Claim 9
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a chain germanium compound.
Claim 10
Dependent Claim
33 words
A method for forming a deposited film according to claim 8, wherein said chain germanium compound is represented by the formula Ge m H 2m+2 (m is an integer of 1 to 5).
Claim 11
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a hydrogenated tin compound.
Claim 12
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a tetrahedral type compound.
Claim 13
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent is selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 .
Claim 14
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine gas.
Claim 15
Dependent Claim
20 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains chlorine gas.
Claim 16
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine atoms as the constituents.
Claim 17
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous halogenic oxidizing agent contains a halogen under nascent state.
Claim 18
Dependent Claim
41 words
A method for forming a deposited film according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.
Claim 19
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.
Claim 20
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) contains an element in the group IIIA of the periodic table.
Claim 21
Dependent Claim
29 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is diborane (B 2 H 6 ) or boron fluoride (BF 3 ).
Claim 22
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) contains an element in the group VA of the periodic table.
Claim 23
Dependent Claim
31 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is phosphine (PH 3 ), phosphorus pentafluoride (PF 5 ) or arsine (AsH 3 ).
Claim 24
Dependent Claim
40 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (D) is diluted with at least one gas among H 2 , He, Ne, Ar, Kr, Xe, and Rn before introduction into the activation space.
Claim 25
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein discharging, light or heat energy is utilized as the activation method in said activation space.
References Cited (Backward Citations)
US31708A
Cited
US2552626A
Cited
US3083550A
Cited
US3188230A
Cited
US3203827A
Cited
US3218204A
Cited
US3224912A
Cited
US3306768A
Cited
US3466191A
Cited
US3473978A
Cited
US3655429A
Cited
US3664866A
Cited
US3870558A
Cited
US3984587A
Cited
US3888705A
Cited
US4146657A
Cited
USRE31708E
Cited
US4180596A
Cited
US4328261A
Cited
GB2038086A
Cited
US4239811A
Cited
US4650539A
Cited
US4448801A
Cited
US4522663A
Cited
US4357179A
Cited
US4421592A
Cited
US4402762A
Cited
US4359490A
Cited
US4416217A
Cited
EP0074212A1
Cited
US4652463A
Cited
EP0090586A1
Cited
US4462847A
Cited
US4615905A
Cited
US4504518A
Cited
US4515107A
Cited
US4529679A
Cited
US4532199A
Cited
JPS59199035A
Cited
US4554180A
Cited
GB2148328A
Cited
US4637938A
Cited
JPS6043819A
Cited
US4526809A
Cited
US4645689A
Cited
US4624906A
Cited
US4595601A
Cited
US4624736A
Cited
US4657777A
Cited
US4689093A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |