Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation

Claim 2

A process for providing an essentially monocrystalline silicon layer over an aperture-free oxide layer which overlies an essentially monocrystalline silicon substrate comprising the steps of: forming over the surface of the substrate a first oxide layer including a plurality of seed holes spaced apart in the layer; growing laterally epitaxial silicon through the seed holes and over the oxide layer to form a first continuous layer of essentially monocrystalline silicon over the oxide layer; etching the first continuous silicon layer to form openings therein and to expose the silicon substrate at the seed holes; selectively oxidizing the silicon substrate where exposed at the seed holes; and regrowing silicon laterally in the openings earlier etched in the first silicon layer to reform the first silicon layer into a continuous layer.

Claim 3

The process of claim 1 in which sidewalls of the openings formed in the continuous silicon layer are covered by a masking layer before the oxidation of the silicon substrate where exposed at the seed holes and the masking layer is removed before the regrowing of silicon to reform the first silicon layer.

Claim 4

The process of claim 2 in which the top of the first layer is covered by a masking layer during the etching to expose the seed holes and during the regrowing of the silicon to reform the first silicon layer.

Claim 5

The process of claim 2 in which said masking layer is of silicon nitride.

Claim 6

The process of claim 3 in which the masking layer over the top of the first layer is of silicon oxide.

Claim 7

The process of claim 5 in which the masking layer over the side walls is of silicon nitride.

Claim 8

A process for forming silicon over an insulator for use in integrated circuit manufacture comprising the steps of: growing over an essentially monocrystalline silicon substrate a layer of silicon oxide; forming a plurality of spaced seed holes in the oxide layer; growing epitaxial silicon laterally over the oxide layer using the silicon exposed at the seed holes for seeding until the grown silicon merges and forms a continuous layer over the oxide layer and making the continuous layer essentially monocrystalline; forming a second silicon oxide layer over the continuous silicon layer; forming openings in the second oxide layer overlapping the seed holes in the first oxide layer; etching the continuous silicon layer through the openings in the second oxide layer to form openings and to expose the silicon substrate at the seed holes; depositing thereover a blanket silicon nitride layer and etching the silicon nitride layer to provide side wall spacers in said openings in the silicon layer but leaving the silicon substrate exposed at the seed holes; oxidizing the silicon substrate where exposed at the seed holes for making continuous the first oxide layer; removing said silicon nitride spacers from the side walls to expose the side walls; regrowing silicon in said openings in the silicon layer to form a substantially planar surface; and removing remainders of the second oxide layer from the surface of the continuous silicon layer.

Claim 9

A process for forming silicon over an insulator for use in integrated circuit manufacture comprising the steps of: growing over an essentially monocrystalline silicon substrate a layer of silicon oxide; forming a plurality of spaced seed holes in the oxide layer; growing epitaxial silicon laterally over the oxide layer using the silicon exposed at the seed holes for seeding until the grown silicon merges and forms a continuous layer over the oxide layer and making the continuous layer essentially monocrystalline; forming a second silicon oxide layer over the continuous silicon layer; forming openings in the second oxide layer overlapping the seed holes in the first oxide layer; etching the continuous silicon layer through the openings in the second oxide layer to form openings and to expose the silicon substrate at the seed holes; depositing thereover a blanket silicon nitride layer and etching the silicon nitride layer to provide side wall spacers in said openings in the silicon layer but leaving the silicon substrate exposed at the seed holes; oxidizing the silicon substrate where exposed at the seed holes for making continuous the first oxide layer; removing said silicon nitride spacers from the side walls to expose the side walls; regrowing silicon in said openings in the silicon layer to form a substantially planar surface; and removing remainders of the second oxide layer from the surface of the continuous silicon layer.

Claim 10

A process for forming silicon over an insulator for use in integrated circuit manufacture comprising the steps of: growing over an essentially monocrystalline silicon substrate a layer of silicon oxide; forming a plurality of spaced seed holes in the oxide layer; growing epitaxial silicon laterally over the oxide layer using the silicon exposed at the seed holes for seeding until the grown silicon merges and forms a continuous layer over the oxide layer and making the continuous layer essentially monocrystalline; forming a second silicon oxide layer over the continuous silicon layer; forming in turn a polysilicon layer and a masking layer over the second silicon oxide layer; patterning in turn the masking layer, the polysilioon layer and the second silicon oxide layer to form openings overlapping the seed holes; etching the continuous silicon layer to form openings herein to expose the silicon substrate at the seed holes; depositing thereover a blanket silicon nitride layer and etching the silicon nitride layer selectively to expose the silicon substrate at the seed holes, leaving covered the top and openings in the etched silicon layer; oxidizing the silicon substrate where exposed at the seed holes; removing remaining silicon nitride layer to expose the sidewalls of the openings in the silicon layer; and regrowing silicon laterally in the openings in the silicon layer to fill the openings and form a continuous substantially planar silicon layer.

Claim 11

A process for forming silicon over an insulator for use in integrated circuit manufacture comprising the steps of: growing over an essentially monocrystalline silicon substrate a layer of silicon oxide; forming a plurality of spaced seed holes in the oxide layer; growing epitaxial silicon laterally over the oxide layer using the silicon exposed at the seed holes for seeding until the grown silicon merges and forms a continuous layer over the oxide layer and making the continuous layer essentially monocrystalline; forming a second silicon oxide layer over the continuous silicon layer; forming in turn a polysilicon layer and a masking layer over the second silicon oxide layer; patterning in turn the masking layer, the polysilioon layer and the second silicon oxide layer to form openings overlapping the seed holes; etching the continuous silicon layer to form openings herein to expose the silicon substrate at the seed holes; depositing thereover a blanket silicon nitride layer and etching the silicon nitride layer selectively to expose the silicon substrate at the seed holes, leaving covered the top and openings in the etched silicon layer; oxidizing the silicon substrate where exposed at the seed holes; removing remaining silicon nitride layer to expose the sidewalls of the openings in the silicon layer; and regrowing silicon laterally in the openings in the silicon layer to fill the openings and form a continuous substantially planar silicon layer.