US4178197A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of epitaxial tunnels utilizing oriented growth techniques
Assignee: International Business Machines Corp
•
Filing: 1979-03-05
•
Granted: 1979-12-11
•
Expires: 1999-03-05
Abstract
Abstract Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.
Inventors
- 👤 John C. Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:21
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; G; G01; G01D; G01D15/00; G01D15/16; G01D15/18; H10D; H10D62/00; H10D62/10; H10D62/117; H10D62/124; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/278; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10W; H10W40/00; H10W40/40; H10W40/47
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
The process of providing epitaxial tunnels in monocrystalline structures comprising the steps of: providing a crystalline substrate having a surface thereof with a crystallographic orientation such that there are two preferential growth crystallographic planes that intersect said substrate surface and intersect each other; providing a void delineating resist pattern on said substrate and epitaxially growing a crystal of said material along said planes until intersection has taken place.
Claim 2
Dependent Claim
68 words
The process of providing epitaxial tunnels in monocrystalline structures comprising the steps of: providing a crystalline substrate having a surface thereof with a crystallographic orientation such that there are two preferential growth crystallographic planes that intersect said substrate surface and intersect each other; providing a void delineating resist pattern on said substrate and epitaxially growing a crystal of said material along said planes until intersection has taken place.
Claim 3
Dependent Claim
17 words
The process of claim 1 including the steps of inserting a p-n junction in said grown material.
Claim 4
Dependent Claim
25 words
The process of claim 1 wherein said resist pattern is a member of the group of SiO 2 , Al 2 O 3 and Mo.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein said resist pattern is tapered providing thereby a point light source.
References Cited (Backward Citations)
US3425879A
Cited
US3621346A
Cited
US3813585A
Cited
US3884733A
Cited
US3855690A
Cited
US4066482A
Cited
US3998672A
Cited
US4071383A
Cited
US4056413A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-10 | 1983-06-11 | 1983-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-10 | 1987-06-11 | 1987-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-10 | 1991-06-11 | 1991-12-11 | $7700.00 | Window Closed / Lapsed |