US3855009A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers
Assignee: Texas Instruments Inc
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Filing: 1973-09-20
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Granted: 1974-12-17
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Expires: 1993-09-20
Abstract
Abstract The disclosure relates to the formation of epitaxial silicon layers on insulating material. Buried layers of silicon nitride, oxide or carbide, approximately 4000 A in width, are formed by ion implantation while retaining a relatively undamaged layer of silicon near the surface. Epitaxial silicon of about 2 Mu m thickness, for example, is grown on these surfaces and yields layers with significantly lower defect concentrations than for silicon layers on prior art substrates such as spinel.
Inventors
- 👤 W Lloyd
- 👤 R Dexter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:00
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10D; H10D99/00; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10W; H10W10/00; H10W10/10; H10W10/181; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/148; Y10S148/15
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
67 words
A METHOD OF DIELECTRICALLY ISOLATING SILICON LAYERS WHICH COMPRISES THE STEPS OF: A. PROVIDING A WAFER OF SINGLE CRYSTAL SILICON, B. IMPLANTING IONS TAKEN FROM THE CLASS CONSISTING OF OXYGEN, NITROGEN AND CARBON AT A PREDETERMINED DEPTH IN SAID WAFER, C. FORMING A LWYER OF A COMPOUND OF SAID IMPLANTED IONS WITH THE SILICON OF SAID WAFER WITHIN WAFER, LEAVING SINGLE CRYSTAL SILICON ABOVE SAID LAYER, AND
Claim 2
Independent Claim
67 words
A METHOD OF DIELECTRICALLY ISOLATING SILICON LAYERS WHICH COMPRISES THE STEPS OF: A. PROVIDING A WAFER OF SINGLE CRYSTAL SILICON, B. IMPLANTING IONS TAKEN FROM THE CLASS CONSISTING OF OXYGEN, NITROGEN AND CARBON AT A PREDETERMINED DEPTH IN SAID WAFER, C. FORMING A LWYER OF A COMPOUND OF SAID IMPLANTED IONS WITH THE SILICON OF SAID WAFER WITHIN WAFER, LEAVING SINGLE CRYSTAL SILICON ABOVE SAID LAYER, AND
Claim 3
Dependent Claim
27 words
A method of dielectrically isolating silicon layers as set forth in claim 1 wherein step (b) includes accelerating said ions with an energy of about 150 keV.
Claim 4
Dependent Claim
31 words
A method as set forth in claim 2 wherein the concentration of said ions is from about 5 X 1016 to about 5 X 1016 to about 5 X 1017 atoms/cm2.
Claim 5
Dependent Claim
28 words
A method as set forth in claim 1 wherein said wafer is etched to provide about a 0.1 micrometer layer of single crystal silicon prior to step (d).
Claim 6
Dependent Claim
27 words
A method as set forth in claim 2 wherein said wafer is etched to provide about 0.1 micrometer layers of single crystal silicon prior to step (d).
Claim 7
Dependent Claim
28 words
A method as set forth in claim 3 wherein said wafer is etched to provide about a 0.1 micrometer layer of single crystal silicon prior to step (d).
Claim 8
Dependent Claim
32 words
A method as set forth in claim 1 wherein step (d) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to about 1200* C.
Claim 9
Dependent Claim
22 words
A method as set forth in claim 7 wherein said wafer is annealed for at least 3 hours at about 1200* C.
Claim 10
Dependent Claim
32 words
A method as set forth in claim 2 wherein step (c) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to about 1200* C.
Claim 11
Dependent Claim
22 words
A method as set forth in claim 9 wherein said wafer is annealed for at least 3 hours at about 1200* C.
Claim 12
Dependent Claim
31 words
A method as set forth in claim 3 wherein step (c) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to 1200* C.
Claim 13
Dependent Claim
22 words
A method as set forth in claim 11 wherein said wafer is annealed for at least 3 hours at about 1200* C.
Claim 14
Dependent Claim
31 words
A method as set forth in claim 4 wherein step (c) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to 1200* C.
Claim 15
Dependent Claim
22 words
A method as set forth in claim 13 wherein said wafer is annealed for at least 3 hours at about 1200* C.
Claim 16
Dependent Claim
32 words
A method as set forth in claim 5 wherein step (c) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to about 1200* C.
Claim 17
Dependent Claim
22 words
A method as set forth in claim 15 wherein said wafer is annealed for at least 3 hours at about 1200* C.
Claim 18
Dependent Claim
32 words
A method as set forth in claim 6 wherein step (c) includes annealing said wafer for from about 1 to 6 hours at a temperature of about 1000* to about 1200* C.
Claim 19
Dependent Claim
22 words
A method as set forth in claim 7 wherein said wafer is annealed for at least 3 hours at about 1200* C.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-16 | 1978-06-17 | 1978-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-16 | 1982-06-17 | 1982-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-16 | 1986-06-17 | 1986-12-17 | $7700.00 | Window Closed / Lapsed |