US3707765A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making isolated semiconductor devices
Assignee: Motorola Solutions Inc
•
Filing: 1970-11-19
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Granted: 1973-01-02
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Expires: 1990-11-19
Abstract
Abstract After a semiconductor device is completed and tested, it is electrically isolated from the substrate by ion implantation of a boat or dish of insulating material in the substrate and surrounding the semiconductor device.
Inventors
- 👤 M Coleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:04
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P30/202; H10P30/206; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/085
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
24 words
The method of claim 1 wherein the substraTe is silicon, and the implanted ions are chosen from the group including oxygen, nitrogen, and silicon.
Claim 2
Dependent Claim
22 words
The method of claim 1 wherein the substrate is GaAs and the implanted ions are from the group including chromium and iron.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-02 | 1976-07-03 | 1977-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-02 | 1980-07-03 | 1981-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-02 | 1984-07-03 | 1985-01-02 | $7700.00 | Window Closed / Lapsed |