Proton enhanced diffusion methods
Abstract
Abstract IMPROVED SEMICONDUCTOR DEVICES ARE MADE BY THE METHOD OF PROTON ENHANCED DIFFUSION. A SEMICONDUCTOR WAFER HAVING A BURIED SUBCOLLECTOR REGION, IS RAISED TO AN ELEVATED TEMPERATURE AND EXPOSED TO AN ACCELERATED BEAM OF HYDROGEN OR HELIUM IONS WHICH MAY EITHER BE FOCUSED OR BE DIRECTED THROUGH A MASK. THE BEAM IS RENDERED INCIDENT ON THE SUBCOLLECTOR REGION. THE IONS PENETRATING THE SUBCOLLECTOR REGION ENHANCE THE DIFFUSION OF SUBCOLLECTOR TYPE IMPURITIES PRODUCING A COLLECTOR PEDESTAL AND A COLLECTOR REACH-THROUGH FOR A PEDESTAL TRANSISTOR. THE TRANSISTOR PRODUCED THEREBY HAS A UNIFORMLY NARROW BASE WIDTH HAVING A RELATIVELY LONG MINORITYU CARRIER LIFETIME AND VERY STEEP IMPURITY PROFILES. AN IMPROVED DIFFUSION CAPACITOR, IGFET, AND SUBSURFACE DIFFUSES INTERCONNECTION IS ALSO MADE BY THE METHOD OF PROTON ENHANCED DIFFUSION.
Inventors
- 👤 J Ahn
- 👤 Witt D De
- 👤 W Johnson
- 👤 W Kleinfelder
Bibliographic Details
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