US4688063A
Expired / Lapsed
US
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Dynamic ram cell with MOS trench capacitor in CMOS
Assignee: International Business Machines Corp
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Filing: 1986-10-21
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Granted: 1987-08-18
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Expires: 2006-10-21
Abstract
Abstract This invention relates generally to Dynamic Random Access Memory (DRAM) cells and more particularly relates to a DRAM cell wherein the storage capacitor of the cell is disposed in a trench formed in a semiconductor substrate. Still more particularly, it relates to a DRAM cell wherein at least a portion of the substrate is heavily doped and forms the counterelectrode of the storage capacitor while a heavily doped polycrystalline plug disposed in the trench capacitor forms the other electrode of the storage capacitor. The DRAM cell includes a field effect access transistor disposed in a well which is opposite in conductivity type to that of the substrate. The well itself is formed in a lightly doped portion of the substrate and may be n or p-type conductivity with the other portions of the cell having conductivity types appropriate for devices fabricated in the CMOS environment. The trench capacitor extends from the surface of the well through the well and lightly doped substrate portion into the heavily doped portion of the substrate. The electrode disposed in the trench is directly connected to the source/drain of the access transistor.
Inventors
- 👤 Nicky C. Lu
- 👤 Tak H. Ning
- 👤 Lewis M. Terman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:33
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37; H10B12/373; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/665
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
102 words
A dynamic random access memory cell array comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate, having a conductivity type opposite to that of said substrate, at least one access device disposed in said region, and at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate said storage means being electrically isolated from said region and said upper and lower portions.
Claim 2
Dependent Claim
102 words
A dynamic random access memory cell array comprising: a substrate of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said substrate, having a conductivity type opposite to that of said substrate, at least one access device disposed in said region, and at least one storage means extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said substrate said storage means being electrically isolated from said region and said upper and lower portions.
Claim 3
Dependent Claim
28 words
A dynamic random access memory cell according to claim 1 further including means for interconnecting said at least one access device and said at least one storage means.
Claim 4
Dependent Claim
24 words
A dynamic random access memory cell according to claim 1 further including means connected to said region for applying a bias to said region.
Claim 5
Dependent Claim
34 words
A dynamic random access memory cell according to claim 1 further including means connected to said at least one access device for transferring binary information to and from said at least one storage means.
Claim 6
Dependent Claim
27 words
A dynamic random access memory cell according to claim 1 wherein said substrate is made of semiconductor material at least a portion of which is heavily doped.
Claim 7
Dependent Claim
19 words
A dynamic random access memory cell according to claim 1 wherein said region is a region of semiconductor material.
Claim 8
Dependent Claim
22 words
A dynamic random access memory cell according to claim 1 wherein said at least one access device is a field effect transistor.
Claim 9
Dependent Claim
28 words
A dynamic random access memory cell according to claim 1 wherein said at least one storage means is an electrode disposed in insulated spaced relationship with said substrate.
Claim 10
Dependent Claim
32 words
A dynamic random access memory cell according to claim 1 wherein said substrate includes a heavily doped lower portion and a lightly doped upper portion disposed over said heavily doped lower portion.
Claim 11
Dependent Claim
24 words
A dynamic random access memory cell according to claim 2 further including means connected to said region for applying a bias to said region.
Claim 12
Dependent Claim
34 words
A dynamic random access memory cell according to claim 2 further including means connected to said at least one access device for transferring binary information to and from said at least one storage means.
Claim 13
Dependent Claim
21 words
A dynamic random access memory cell according to claim 3 wherein said means for applying a bias is a voltage source.
Claim 14
Dependent Claim
32 words
A dynamic random access memory cell according to claim 4 wherein said means for transferring binary information includes a pair of pulsed voltage sources connected to said at least one access device.
Claim 15
Dependent Claim
21 words
A dynamic random access memory cell according to claim 5 wherein said semiconductor material is silicon of n-conductivity or p-conductivity type.
Claim 16
Dependent Claim
21 words
A dynamic random access memory cell according to claim 6 wherein said semiconductor material is silicon of p-conductivity or n-conductivity type.
Claim 17
Dependent Claim
20 words
A dynamic random access memory cell according to claim 8 wherein said electrode is comprised of heavily doped polycrystalline silicon.
Claim 18
Dependent Claim
24 words
A dynamic random access memory cell according to claim 9 wherein said region is disposed in said lightly doped upper portion of said substrate.
Claim 19
Dependent Claim
34 words
A dynamic random access memory cell according to claim 10 further including means connected to said at least one access device for transferring binary information to and from said at least one storage means.
Claim 20
Dependent Claim
108 words
A dynamic random access memory cell comprising a counterelectrode of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said counterelectrode having a conductivity type opposite to that of said counterelectrode, at least one access device disposed in said region, at least one trench extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said counterelectrode, and, at least one storage electrode in said at least one trench, said storage electrode being disposed in insulated spaced relationship with said counterelectrode.
Claim 21
Dependent Claim
108 words
A dynamic random access memory cell comprising a counterelectrode of a first conductivity type the upper portion of which is less conductive than its highly conductive lower portion, a region disposed in said upper portion of said counterelectrode having a conductivity type opposite to that of said counterelectrode, at least one access device disposed in said region, at least one trench extending from the surface of said region through said region and said upper portion into said highly conductive lower portion of said counterelectrode, and, at least one storage electrode in said at least one trench, said storage electrode being disposed in insulated spaced relationship with said counterelectrode.
Claim 22
Dependent Claim
28 words
A dynamic random access memory cell according to claim 19 further including means for interconnecting said at least one storage electrode and said at least one access device.
Claim 23
Dependent Claim
24 words
A dyanmic random access memory cell according to claim 20 further including means connected to said region for applying a bias to said region.
Claim 24
Dependent Claim
34 words
A dynamic random access memory cell according to claim 21 further including means connected to said at least one access device for transferring binary information to and from said at least one storage electrode.
Claim 25
Dependent Claim
26 words
A dynamic random access memory cell according to claim 22 wherein said counterelectrode is a semiconductor substrate at least a portion of which is heavily doped.
Claim 26
Dependent Claim
19 words
A dynamic random access memory cell according to claim 23 wherein said region is a region of semiconductor material.
Claim 27
Dependent Claim
22 words
A dynamic random access memory cell according to claim 24 wherein said at least one access device is a field effect transistor.
Claim 28
Dependent Claim
25 words
A dynamic random access memory cell according to claim 25 wherein said at least one storage electrode is made of heavily doped, polycrystalline semiconductor material.
Claim 29
Dependent Claim
22 words
A dynamic random access memory cell according to claim 26 wherein said means for interconnecting is a region of polycrystalline semiconductor material.
Claim 30
Dependent Claim
16 words
A dynamic random access memory cell according to claim 27 wherein said semiconductor material is silicon.
Claim 31
Dependent Claim
93 words
A dynamic random access memory cell comprising a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, and, at least one storage electrode disposed in insulated spaced relationship with and in said at least one trench.
Claim 32
Dependent Claim
93 words
A dynamic random access memory cell comprising a semiconductor substrate having a lightly doped portion of one conductivity type overlying a heavily doped portion of the same conductivity type, a region of second conductivity type disposed in said lightly doped portion, at least one access transistor disposed in said region, at least one trench extending from the surface of said region through said region and said lightly doped portion into said heavily doped portion, and, at least one storage electrode disposed in insulated spaced relationship with and in said at least one trench.
Claim 33
Dependent Claim
28 words
A dynamic random access memory cell according to claim 29 further including means for interconnecting said at least one storage electrode and said at least one access transistor.
Claim 34
Dependent Claim
24 words
A dynamic random access memory cell according to claim 30 further including means connected to said region for applying a bias to said region.
Claim 35
Dependent Claim
34 words
A dynamic random access memory cell according to claim 31 further including means connected to said at least one access transistor for transferring binary information to and from said at least one storage electrode.
Claim 36
Dependent Claim
22 words
A dynamic random access memory cell according to claim 32 wherein said at least one access transistor is a field effect transistor.
Claim 37
Dependent Claim
25 words
A dynamic random access memory cell according to claim 33 wherein said at least one storage electrode is made of heavily doped, polycrystalline semiconductor material.
Claim 38
Dependent Claim
22 words
A dynamic random access memory cell according to claim 34 wherein said means for interconnecting is a region of polycrystalline semiconductor material.
Claim 39
Dependent Claim
16 words
A dynamic random access memory cell according to claim 35 wherein said semiconductor material is silicon.
Claim 40
Dependent Claim
115 words
A dynamic random access memory cell array formed in a semiconductor substrate having a first conductivity type, said substrate having therein a region of semiconductor material of the opposite conductivity type disposed in a lightly doped portion of said substrate, an access transistor located in said region, a trench storage capacitor extending from the surface of said region through said region and said lightly doped portion into the remaining portion of said substrate, said capacitor having a dielectric layer and a first electrode disposed in said trench, said substrate and said region forming a second electrode of said capacitor, and means located over said region and electrically connecting said access transistor and said first electrode.
Claim 41
Dependent Claim
115 words
A dynamic random access memory cell array formed in a semiconductor substrate having a first conductivity type, said substrate having therein a region of semiconductor material of the opposite conductivity type disposed in a lightly doped portion of said substrate, an access transistor located in said region, a trench storage capacitor extending from the surface of said region through said region and said lightly doped portion into the remaining portion of said substrate, said capacitor having a dielectric layer and a first electrode disposed in said trench, said substrate and said region forming a second electrode of said capacitor, and means located over said region and electrically connecting said access transistor and said first electrode.
Claim 42
Dependent Claim
20 words
The array of claim 37, where said first electrode is a storage electrode and said access transistor is a FET.
Claim 43
Dependent Claim
18 words
The array of claim 38, where said semiconductor is silicon and said first electrode is heavily doped polysilicon.
Claim 44
Dependent Claim
31 words
The array of claim 39, where said FET has an electrical source or drain region formed in said well said source or drain region being in contact with said dielectric layer.
Claim 45
Dependent Claim
97 words
A dynamic random access memory cell array formed in a semiconductor substrate of a first conductivity type having a region formed in a portion thereof said region having a conductivity type opposite to that of said substrate, an access transistor formed in said region, a storage capacitor having a vertically disposed storage electrode and a vertically disposed dielectric layer, said storage electrode and said dielectric layer extending from the surface of said region through said region and into said substrate, and an electrical interconnection overlying said region and electrically connecting said access transistor and said storage electrode.
Claim 46
Dependent Claim
97 words
A dynamic random access memory cell array formed in a semiconductor substrate of a first conductivity type having a region formed in a portion thereof said region having a conductivity type opposite to that of said substrate, an access transistor formed in said region, a storage capacitor having a vertically disposed storage electrode and a vertically disposed dielectric layer, said storage electrode and said dielectric layer extending from the surface of said region through said region and into said substrate, and an electrical interconnection overlying said region and electrically connecting said access transistor and said storage electrode.
Claim 47
Dependent Claim
36 words
The array of claim 41, where said substrate includes a highly conductive portion remote from said region said highly conductive portion being in contact with said dielectric layer and forming a counterelectrode of said storage capacitor.
Claim 48
Dependent Claim
27 words
The array of claim 42, where said highly conductive region of said substrate is separated from said region by a more lightly conducting portion of said substrate.
Claim 49
Dependent Claim
124 words
A dynamic random access memory cell array formed in a substrate of a first conductivity type having therein a region of opposite conductivity type disposed in a lower conductivity upper portion of said substrate, an access transistor extending laterally in said region, a first electrode extending vertically from the surface of said region through said region and into said substrate, a dielectric layer in contact with said first electrode and extending vertically through said region and into said substrate, a second electrode comprised of a portion of said region and a portion of said substrate and being insulated from said first electrode by said dielectric layer, and an electrical interconnection located over said region and electrically interconnecting said access transistor and said first electrode.
Claim 50
Dependent Claim
124 words
A dynamic random access memory cell array formed in a substrate of a first conductivity type having therein a region of opposite conductivity type disposed in a lower conductivity upper portion of said substrate, an access transistor extending laterally in said region, a first electrode extending vertically from the surface of said region through said region and into said substrate, a dielectric layer in contact with said first electrode and extending vertically through said region and into said substrate, a second electrode comprised of a portion of said region and a portion of said substrate and being insulated from said first electrode by said dielectric layer, and an electrical interconnection located over said region and electrically interconnecting said access transistor and said first electrode.
Claim 51
Dependent Claim
44 words
The array of claim 44, wherein said substrate includes a highly doped portion in contact with said dielectric layer, said highly doped portion being separated from said electrical interconnection by a lightly doped portion of said substrate and by said opposite conductivity type region.
Claim 52
Dependent Claim
190 words
A dynamic random access memory cell array formed in a single crystal semiconductor substrate having a first conductivity type, said substrate having therein a semiconductor region of an opposite conductivity type disposed in a low conductivity upper portion of said substrate, said substrate having a laterally extending lower portion thereof which is highly doped to render it conductive, a trench extending vertically through said region and said upper portion into said highly doped portion of said single crystal substrate, said trench defining the geometry of a capacitor for storing charge thereon, an access transistor formed in said region, a dielectric layer formed on the inner surface of said trench, said dielectric layer being in contact with said highly doped portion of said substrate, a first electrode formed in said trench in contact with said dielectric layer, said first electrode extending into said highly doped portion of said substrate and being separated therefrom by said dielectric layer, a second electrode comprised of said region and said highly doped portion of said single crystal substrate which contacts said dielectric layer, and a conductive layer electrically connecting said access transistor and said capacitor.
Claim 53
Dependent Claim
190 words
A dynamic random access memory cell array formed in a single crystal semiconductor substrate having a first conductivity type, said substrate having therein a semiconductor region of an opposite conductivity type disposed in a low conductivity upper portion of said substrate, said substrate having a laterally extending lower portion thereof which is highly doped to render it conductive, a trench extending vertically through said region and said upper portion into said highly doped portion of said single crystal substrate, said trench defining the geometry of a capacitor for storing charge thereon, an access transistor formed in said region, a dielectric layer formed on the inner surface of said trench, said dielectric layer being in contact with said highly doped portion of said substrate, a first electrode formed in said trench in contact with said dielectric layer, said first electrode extending into said highly doped portion of said substrate and being separated therefrom by said dielectric layer, a second electrode comprised of said region and said highly doped portion of said single crystal substrate which contacts said dielectric layer, and a conductive layer electrically connecting said access transistor and said capacitor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-17 | 1991-02-16 | 1991-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-17 | 1995-02-16 | 1995-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-17 | 1999-02-16 | 1999-08-18 | $7700.00 | Window Closed / Lapsed |