Patent US4632713A successfully refreshed from Google Patents.
US4632713A
Expired / Lapsed
US
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Process of making Schottky barrier devices formed by diffusion before contacting
Assignee: Texas Instruments Inc
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Filing: 1985-07-31
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Granted: 1986-12-30
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Expires: 2005-07-31
Abstract
Abstract Increased barrier heights at metal(36)-semiconductor(32) contacts for semiconductors such as gallium arsenide by formation of an opposite doping type thin layer (34) on the semiconductor (32) surface by surface diffusion of dopants are disclosed. Preferred embodiments diffuse zinc 50 to 400 Å into n type gallium arsenide (32) by rapid thermal pulses; then aluminum or titanium-platinum (36) contacts to the zinc doped layer (34) are deposited by evaporation and lift off.
Inventors
- 👤 Shiban K. Tiku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:25
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/051; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/60; H10D64/64
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
65 words
A method of raising the barrier height of a metal-semiconductor contact wherein said semiconductor is doped a first conductivity type, comprising the steps of: (a) forming a thin layer of a conductivity type opposite said first type on said semiconductor by rapid thermal diffusion of dopant from a surface of said semiconductor; and (b) depositing said metal on said thin layer to form said contact.
Claim 2
Independent Claim
65 words
A method of raising the barrier height of a metal-semiconductor contact wherein said semiconductor is doped a first conductivity type, comprising the steps of: (a) forming a thin layer of a conductivity type opposite said first type on said semiconductor by rapid thermal diffusion of dopant from a surface of said semiconductor; and (b) depositing said metal on said thin layer to form said contact.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein: (a) said semiconductor is a compound of elements from groups III and V of the periodic table.
Claim 4
Dependent Claim
12 words
The method of claim 2, wherein: (a) said semiconductor is gallium arsenide.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein: (a) said dopant is zinc.
Claim 6
Dependent Claim
21 words
The method of claim 4, wherein: (a) said zinc is supplied by a mixture containing zinc oxide deposited on said surface.
Claim 7
Dependent Claim
29 words
The method of claim 1, wherein: (a) said first conductivity type is n type; and (b) said dopant is selected from the group consisting of zinc, beryllium, and magnesium.
Claim 8
Dependent Claim
30 words
The method of claim 1, wherein: (a) said first conductivity type is p type; and (b) said dopant is selected form the group consisting of sulfur, tin, selenium, and tellurium.
References Cited (Backward Citations)
US3907617A
Cited
US3938243A
Cited
US3820235A
Cited
US4265934A
Cited
US4332076A
Cited
US4186410A
Cited
US4434013A
Cited
US4414737A
Cited
US4389768A
Cited
US4545824A
Cited
US4485550A
Cited
US4569119A
Cited
US4586968A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-29 | 1990-06-30 | 1990-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-29 | 1994-06-30 | 1994-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-29 | 1998-06-30 | 1998-12-30 | $7700.00 | Window Closed / Lapsed |