US4414737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of Schottky barrier diode
Assignee: Toshiba Corp
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Filing: 1982-01-21
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Granted: 1983-11-15
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Expires: 2002-01-21
Abstract
Abstract A Schottky barrier diode is manufactured by first forming insulating layer on a semiconductor substrate of a first conductivity type. The insulating layer is then provided with a first opening partly exposing the substrate. Then a continuous semiconductor layer doped with an impurity of a second conductivity type is formed over the insulating layer and on the exposed surface of the substrate. The semiconductor layer is etched in the direction of thickness until those portions which lie on the insulating layer and the exposed surface of the substrate are removed, whereby a portion of the semiconductor layer remains on the side wall of the insulating layer which defines the first opening, and a second opening is formed partly exposing the substrate within the first opening. A guard ring region is then formed in a surface region of the semiconductor substrate by diffusing the impurity from the remaining doped semiconductor layer. Finally, a metal layer is formed on the exposed semiconductor substrate surface within the second opening, thus obtaining a Schottky barrier diode.
Inventors
- 👤 Atsuhiko Menjo
- 👤 Shinji Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:56
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; H10D; H10D8/00; H10D8/60; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
192 words
A method of manufacturing a Schottky barrier diode comprising: forming an insulating layer on the surface of a semiconductor substrate of a first conductivity type; forming a first opening in said insulating layer, partly exposing the surface of said substrate; forming a continuous semiconductor layer doped with an impurity of a second conductivity type opposite to said first conductivity type over said insulating layer and on said exposed substrate surface in said first opening; etching said doped semiconductor layer in the direction of thickness thereof until those portions which lie on the insulating layer and the exposed surface of the substrate are removed to provide as a diffusion source a portion of said doped semiconductor layer remaining on the side wall of said insulating layer which defines said first opening and also form a second opening partly exposing said semiconductor substrate surface within said first opening; causing diffusion of said impurity from said diffusion source into said semiconductor substrate to form a guard ring region therein; and forming a metal layer on said exposed semiconductor substrate surface within said second opening, said metal layer forming a Schottky barrier with said semiconductor substrate.
Claim 2
Independent Claim
192 words
A method of manufacturing a Schottky barrier diode comprising: forming an insulating layer on the surface of a semiconductor substrate of a first conductivity type; forming a first opening in said insulating layer, partly exposing the surface of said substrate; forming a continuous semiconductor layer doped with an impurity of a second conductivity type opposite to said first conductivity type over said insulating layer and on said exposed substrate surface in said first opening; etching said doped semiconductor layer in the direction of thickness thereof until those portions which lie on the insulating layer and the exposed surface of the substrate are removed to provide as a diffusion source a portion of said doped semiconductor layer remaining on the side wall of said insulating layer which defines said first opening and also form a second opening partly exposing said semiconductor substrate surface within said first opening; causing diffusion of said impurity from said diffusion source into said semiconductor substrate to form a guard ring region therein; and forming a metal layer on said exposed semiconductor substrate surface within said second opening, said metal layer forming a Schottky barrier with said semiconductor substrate.
Claim 3
Dependent Claim
113 words
A method according to claim 1, wherein a film having a selective etching tendency with respect to said insulating layer is formed on said insulating layer; a hole is made in the film; said insulating layer is isotropically etched through the hole in the film, thus making said first opening in said insulating layer, said first opening being partly covered by that portion of the film which surrounds said first opening to form an overhang; said doped semiconductor layer is formed and etched to provide said diffusion source under said overhang and to make said second opening; and said film is removed to expose the insulating layer before the metal layer is formed.
Claim 4
Dependent Claim
14 words
A method according to claim 2, wherein said film is made of silicon nitride.
Claim 5
Dependent Claim
39 words
A method according to claim 2, wherein said doped semiconductor layer is formed such that the thickness of the doped semiconductor layer portion which lie on the film is at least one half the thickness of the insulating layer.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein said doped semiconductor layer is formed directly on said insulating layer and in said first opening, and is anisotropically etched to provide said diffusion source and make said second opening.
Claim 7
Dependent Claim
114 words
A method according to claim 1, wherein said doped semiconductor layer is formed directly on said insulating layer and in said first opening, said doped semiconductor layer defining a recess corresponding to said first opening; a film having a selective etching tendency with respect to said doped semiconductor layer is formed on said doped semiconductor layer; said film is etched such that a portion remain on the side wall of said recess; the doped semiconductor layer is etched with the remaining portion of said film used as a mask to provide said diffusion source and make said second opening; and the remaining portion of said film is removed before said metal layer is formed.
Claim 8
Dependent Claim
21 words
A method according to claim 6, wherein said film is made of doped glass, chemical vapor-deposited silicon oxide or silicon nitride.
Claim 9
Independent Claim
16 words
A method according to any one of claims 1-7, wherein said substrate is formed of silicon.
Claim 10
Dependent Claim
15 words
A method according to claim 8, wherein said insulating layer is formed of silicon oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-11-14 | 1987-05-16 | 1987-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-11-14 | 1991-05-16 | 1991-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-11-14 | 1995-05-16 | 1995-11-15 | $7700.00 | Window Closed / Lapsed |