US3764413A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing insulated gate field effect transistors
Assignee: NEC Corp
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Filing: 1971-11-23
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Granted: 1973-10-09
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Expires: 1991-11-23
Abstract
Abstract A METHOD IS DISCLOSED FOR FABRICATING AN INSULATED-GATE FIELD-EFFECT TRANSISTOR. IN THE METHOD, A WINDOW IS FORMED ON AN INSULATING FILM FORMED ON A SUBSTRATE OVER THE GATE, SOURCE AND DRAIN REGIONS WHICH ARE TO BE FORMED. A SEMICONDUCTOR LAYER OF A CONDUCTIVITY TYPE OPPOSITE TO THAT OF THE SUBSTRATE IS DEPOSITED OVER THE INSULATING FILM AND THE EXPOSED PORTION OF THE SUBSTRATE DEFINED BY THE WINDOW. THE SEMICONDUCTOR LAYER IS THEN SELECTIVELY REMOVED TO EXPOSE THE SUBSTRATE AT THE GATE REGION AFTER WHICH A SECOND INSULATING FILM IS FORMED OVER THE REMAINING SEMICONDUCTOR LAYER AND THE EXPOSED SUBSTRATE SURFACE AT THE INTENDED GATE REGION.
Inventors
- 👤 K Kakizaki
- 👤 O Kurakami
- 👤 Y Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:02
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/122; Y10S438/00; Y10S438/969
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-08 | 1977-04-09 | 1977-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-08 | 1981-04-09 | 1981-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-08 | 1985-04-09 | 1985-10-09 | $7700.00 | Window Closed / Lapsed |