US4356040A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having improved interlevel conductor insulation
Assignee: Texas Instruments Inc
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Filing: 1980-05-02
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Granted: 1982-10-26
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Expires: 2000-05-02
Abstract
Abstract A semiconductor device and method of manufacture employs an improved insulating layer to laterally separate conductive layers or regions. A relatively thick insulating layer is anisotropically patterned to form an electrode having a thick insulating layer on its side walls. Subsequently defined conductive regions are separated from the electrode by a distance determined by the thickness of the insulating layer. In devices requiring multiple level polycrystalline silicon electrodes, shorts between electrodes are reduced; in MOS devices, operating parameters are improved due to decreased overlap of the gate electrode over the source or drain region, decreased contamination of the gate electrode during manufacture, and more uniform gate oxide definition along the active channel between the source and drain.
Inventors
- 👤 Horng-Sen Fu
- 👤 Al F. Tasch, Jr.
- 👤 Pallab K. Chatterjee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:08
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10P; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/141
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
65 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over the top surface and side wall regions of said at least one electrode; and anisotropically removing said insulating layer except from said side wall regions.
Claim 2
Dependent Claim
65 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over the top surface and side wall regions of said at least one electrode; and anisotropically removing said insulating layer except from said side wall regions.
Claim 3
Dependent Claim
72 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over the top surface and side wall regions of said at least one electrode; and removing substantially all of said insulating layer except that portion formed on the side wall of said electrode.
Claim 4
Dependent Claim
72 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over the top surface and side wall regions of said at least one electrode; and removing substantially all of said insulating layer except that portion formed on the side wall of said electrode.
Claim 5
Dependent Claim
80 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over said at least one electrode; and anisotropically removing portions of said insulating layer such that portions of said insulating layer formed on the side wall of said electrode remains substantially intact while other portions of said insulating layer are removed.
Claim 6
Dependent Claim
80 words
In a method for manufacturing a device, the steps comprising: forming a conductive layer on a substrate; patterning said layer to form at least one electrode having a top surface and side wall regions; forming a conformant insulating layer over said at least one electrode; and anisotropically removing portions of said insulating layer such that portions of said insulating layer formed on the side wall of said electrode remains substantially intact while other portions of said insulating layer are removed.
Claim 7
Independent Claim
113 words
A method for making a semiconductor device comprising the steps of: forming an insulating layer upon a semiconductor substrate; forming a conductive layer upon said insulating layer; forming a first insulating layer upon said conductive layer; patterning said conductive layer and said first insulating layer with an anisotropic plasma etch such that the remaining portions of said conductive layer and said first insulating layer have substantially vertical edges which are substantially coplanar with each other; forming a second insulating layer upon said device; and forming insulating regions along said edges of said conductive layer by subjecting said second insulating layer to an anisotropic etch which etches perpendicular to the surface of said substrate.
Claim 8
Independent Claim
113 words
A method for making a semiconductor device comprising the steps of: forming an insulating layer upon a semiconductor substrate; forming a conductive layer upon said insulating layer; forming a first insulating layer upon said conductive layer; patterning said conductive layer and said first insulating layer with an anisotropic plasma etch such that the remaining portions of said conductive layer and said first insulating layer have substantially vertical edges which are substantially coplanar with each other; forming a second insulating layer upon said device; and forming insulating regions along said edges of said conductive layer by subjecting said second insulating layer to an anisotropic etch which etches perpendicular to the surface of said substrate.
Claim 9
Dependent Claim
30 words
A method according to claim 4, wherein said conductive layer is polycrystalline silicon and said thin insulating layer, said first insulating layer and said second insulating layer are silicon dioxide.
Claim 10
Independent Claim
139 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first relatively thin insulating layer on the surface of a semiconductor substrate; forming a conductive layer upon said insulating layer; patterning said conductive layer to define a gate electrode having a top surface and side wall regions; forming a second insulating layer over said gate electrode; anisotropically removing portions of said second insulating layer such that said second insulating layer is removed from all portions except said side wall regions of said gate electrode; ion implanting impurities into the surface of said semiconductor substrate, said gate electrode and said second insulating layer on the side wall thereof forming a mask against said ion implantation thereby producing a doped region in the surface of said substrate, the edge of which is laterally spaced from said gate electrode.
Claim 11
Independent Claim
139 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first relatively thin insulating layer on the surface of a semiconductor substrate; forming a conductive layer upon said insulating layer; patterning said conductive layer to define a gate electrode having a top surface and side wall regions; forming a second insulating layer over said gate electrode; anisotropically removing portions of said second insulating layer such that said second insulating layer is removed from all portions except said side wall regions of said gate electrode; ion implanting impurities into the surface of said semiconductor substrate, said gate electrode and said second insulating layer on the side wall thereof forming a mask against said ion implantation thereby producing a doped region in the surface of said substrate, the edge of which is laterally spaced from said gate electrode.
Claim 12
Independent Claim
225 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first relatively thin insulating layer on the surface of a semiconductor substrate; forming a conductive layer upon said first insulating layer; forming a second relatively thick insulating layer to overlie said conductive layer; patterning said second insulating layer and said first conductive layer to define a first gate electrode which is separated from said substrate by said first relatively thin insulating layer, the top surface of said first gate electrode being covered by said second insulating layer; forming a third conformant insulating layer to overlie said gate electrode and the portion of said second insulating layer remaining on its top surface; anisotropically removing said third insulating layer except from the side walls of said gate electrode and its overlying insulating layer; removing said first insulating layer from all portions of said substrate except that portion covered by said first gate electrode and said relatively thick insulating region formed on the side wall thereof; forming a second relatively thin insulating film on said substrate; forming a second conductive layer to overlie said second insulating layer and at least a portion of said first gate electrode, said first gate electrode and the second conductive layer being laterally separated by said relatively thick insulating layer remaining of the side wall of said first gate electrode.
Claim 13
Independent Claim
225 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first relatively thin insulating layer on the surface of a semiconductor substrate; forming a conductive layer upon said first insulating layer; forming a second relatively thick insulating layer to overlie said conductive layer; patterning said second insulating layer and said first conductive layer to define a first gate electrode which is separated from said substrate by said first relatively thin insulating layer, the top surface of said first gate electrode being covered by said second insulating layer; forming a third conformant insulating layer to overlie said gate electrode and the portion of said second insulating layer remaining on its top surface; anisotropically removing said third insulating layer except from the side walls of said gate electrode and its overlying insulating layer; removing said first insulating layer from all portions of said substrate except that portion covered by said first gate electrode and said relatively thick insulating region formed on the side wall thereof; forming a second relatively thin insulating film on said substrate; forming a second conductive layer to overlie said second insulating layer and at least a portion of said first gate electrode, said first gate electrode and the second conductive layer being laterally separated by said relatively thick insulating layer remaining of the side wall of said first gate electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-25 | 1986-04-26 | 1986-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-25 | 1990-04-26 | 1990-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-25 | 1994-04-26 | 1994-10-26 | $7700.00 | Window Closed / Lapsed |