US4545824A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a GaAs or InP semiconductor by pre-implantation followed by transition metal diffusion
Assignee: Individual
•
Filing: 1982-11-24
•
Granted: 1985-10-08
•
Expires: 2002-11-24
Abstract
Abstract Process for producing a semiconductor component by diffusion with prior ion implantation. According to the invention, an impurity of oxygen, fluorine, chlorine or bromine having chemical affinity with the diffusion impurity is implanted in the semiconductor substrate of GaAs or InP before thermally diffusing Zn, Cd or Fe in the substrate. The diffusion is thus limited in depth.
Inventors
- 👤 Michel Salvi
- 👤 Pierre N. Favennec
- 👤 Marcel Gauneau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:31
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; H10P32/17; H10P32/174
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
62 words
A process for producing a semiconductor component comprising the steps of: providing a semiinsulating substrate belonging to the group including GaAs and InP; implanting said substrate with ions of an impurity belonging to the group including oxygen, fluorine, chlorine, and bromine; and thermally diffusing a metal in the thus implanted substrate, said metal belonging to the group including zinc, cadmium and iron.
Claim 2
Dependent Claim
62 words
A process for producing a semiconductor component comprising the steps of: providing a semiinsulating substrate belonging to the group including GaAs and InP; implanting said substrate with ions of an impurity belonging to the group including oxygen, fluorine, chlorine, and bromine; and thermally diffusing a metal in the thus implanted substrate, said metal belonging to the group including zinc, cadmium and iron.
Claim 3
Dependent Claim
22 words
A process according to claim 1, wherein the ions implanting operation is carried out with an energy between 0.5 and 2 MeV.
Claim 4
Dependent Claim
26 words
A process according to claim 1, wherein the ions implanting operation is carried out with a dosage between 10 13 and 10 15 ions/cm 2 .
Claim 5
Dependent Claim
27 words
A process according to claim 1, wherein the implanting operation is of an ion having a chemical affinity for the metal diffused in the thermal diffusion step.
Claim 6
Dependent Claim
32 words
A process for producing a semiconductor component comprising the steps of: providing a semiinsulating substrate of InP; implanting said substrate with chlorine ions; and thermally diffusing zinc in the thus implanted substrate.
Claim 7
Dependent Claim
32 words
A process for producing a semiconductor component comprising the steps of: providing a semiinsulating substrate of InP; implanting said substrate with chlorine ions; and thermally diffusing zinc in the thus implanted substrate.
Claim 8
Dependent Claim
22 words
A process according to claim 4, wherein the ions implanting operation is carried out with an energy between 0.5 and 2 MeV.
Claim 9
Dependent Claim
26 words
A process according to claim 4, wherein the ions implanting operation is carried out with a dosage between 10 13 and 10 15 ions/cm 2 .
References Cited (Backward Citations)
US4017887A
Cited
US4240096A
Cited
US4252580A
Cited
US4372032A
Cited
US4383869A
Cited
US4469528A
Cited
US4391651A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |