US4383869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for enhancing electron mobility in GaAs
Assignee: Intersil Corp
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Filing: 1981-06-15
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Granted: 1983-05-17
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Expires: 2001-06-15
Abstract
Abstract The electron mobility in an active layer on a semi-insulating substrate is enhanced by initially performing a high energy implantation of an element which is inert in the semi-insulating material. Donor ions are then implanted so as to form the active layer in that area of the substrate in which the high energy implantation was performed, and the substrate is annealed.
Inventors
- 👤 Shing-gong Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:30
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/218
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
48 words
A method for enhancing electron mobility in a semi-insulating substrate, comprising: implanting into said substrate high energy ions of a material which is inert in said substrate so as to form a surface layer in said substrate; implanting donor ions into said surface layer; and annealing said substrate.
Claim 2
Independent Claim
48 words
A method for enhancing electron mobility in a semi-insulating substrate, comprising: implanting into said substrate high energy ions of a material which is inert in said substrate so as to form a surface layer in said substrate; implanting donor ions into said surface layer; and annealing said substrate.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1, wherein the substrate is a III-V material.
Claim 4
Dependent Claim
12 words
A method in accordance with claim 2, wherein the substrate is GaAs.
Claim 5
Dependent Claim
16 words
A method in accordance with claim 3, wherein the substrate is doped with a compensating impurity.
Claim 6
Dependent Claim
23 words
A method in accordance with claim 4, wherein the compensating impurity is an element selected from the group consisting of chromium and oxygen.
Claim 7
Dependent Claim
24 words
A method in accordance with claim 1, wherein the donor ion is an element selected from the group consisting of silicon, sulfur, and selenium.
Claim 8
Dependent Claim
25 words
A method in accordance with claim 1, wherein the high energy ions consist of an element selected from the group consisting of argon and phosphorus.
Claim 9
Dependent Claim
29 words
A method in accordance with claim 7, wherein argon is implanted at 750 KeV and a fluence of approximately 5×10 12 cm -2 to 1×10 13 cm -2 .
Claim 10
Dependent Claim
18 words
A method in accordance with claim 1, further comprising: annealing the substrate after the high energy ion implantation.
Claim 11
Dependent Claim
19 words
A method in accordance with claim 1 or 9, comprising annealing at approximately 800°-900° C. for approximately 15-30 minutes.
Claim 12
Dependent Claim
22 words
A method in accordance with claim 1, wherein the high energy ions are implanted at an energy greater than approximately 100 KeV.
Claim 13
Dependent Claim
29 words
A method in accordance with claim 1, wherein the high energy ions are implanted at a fluence between approximately 1×10 12 cm -2 and 5×10 13 cm -2 .
References Cited (Backward Citations)
US3925106A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-16 | 1986-11-15 | 1987-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-16 | 1990-11-15 | 1991-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-16 | 1994-11-15 | 1995-05-17 | $7700.00 | Window Closed / Lapsed |