US4469528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device of GaAs by two species ion implantation
Assignee: US Philips Corp
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Filing: 1982-09-15
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Granted: 1984-09-04
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Expires: 2002-09-15
Abstract
Abstract The invention relates to a method of treating a substrate of gallium arsenide by a double ion implantation. A first implantation of silicon ions (Si + ) is carried out on the entire surface of the substrate, and a second implantation of oxygen ions (O + ) is carried out in regions intended to become isolated regions. A thermal annealing treatment, preferably under encapsulation, follows these ion implantations. These implantations are carried out in order to obtain at the surface of the substrate regions of n-conductivity type isolating regions separated from each other for subsequent manufacture of semiconductor devices. The invention also relates to a gallium arsenide substrate thus treated and to a semiconductor device obtained by the technique of two ion implantations.
Inventors
- 👤 Michel Berth
- 👤 Camille Venger
- 👤 Gerard M. Martin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:29
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; H10P30/21; H10P30/218; H10P30/28; H10P95/00; H10P95/90; H10P95/904; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/117
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A method of manufacturing a seimconductor device comprising the steps of providing a semi-insulating substrate of gallium arsenide, implanting silicon ions into a first surface of said substrate to form an N-type gallium arsenide layer, selectively implanting oxygen ions into said N-type layer to form isolated regions extending through said layer to said substrate, said isolated regions dividing said N-type layer into mutually isolated islands to form locations for semiconductor circuit elements, and subjecting the semiconductor body thus formed to a heat treatment.
Claim 2
Independent Claim
83 words
A method of manufacturing a seimconductor device comprising the steps of providing a semi-insulating substrate of gallium arsenide, implanting silicon ions into a first surface of said substrate to form an N-type gallium arsenide layer, selectively implanting oxygen ions into said N-type layer to form isolated regions extending through said layer to said substrate, said isolated regions dividing said N-type layer into mutually isolated islands to form locations for semiconductor circuit elements, and subjecting the semiconductor body thus formed to a heat treatment.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein said heat treatment is carried out under an encapsulation layer covering said semiconductor body.
Claim 4
Dependent Claim
42 words
A method according to claim 1, wherein said implantation of silicon ions is carried out with a dose of between 10 12 and 5×10 12 silicon ions per cm 2 , and with an energy of between 50 KeV and 500 KeV.
Claim 5
Dependent Claim
42 words
A method according to claim 1, wherein said implantation of oxygen ions is carried out with a dose of between 10 13 and 5×10 13 oxygen ions per cm 2 , and with an energy of between 50 KeV and 500 KeV.
Claim 6
Dependent Claim
42 words
A method according to claim 2, wherein said implantation of silicon ions is carried out with a dose of between 10 12 and 5×10 12 silicon ions per cm 2 , and with an energy of between 50 KeV and 500 KeV.
Claim 7
Dependent Claim
42 words
A method according to claim 2, wherein said implantation of oxygen ions is carried out with a dose of between 10 13 and 5×10 13 oxygen ions per cm 2 , and with an energy of between 50 KeV and 500 KeV.
Claim 8
Dependent Claim
36 words
A method according to claim 2, wherein said heat treatment is carried out under an encapsulation layer of silicon nitride at temperatures between 700° C. and 900° C. for approximately 15 minutes in a nitrogen atmosphere.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-04 | 1988-03-05 | 1988-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-04 | 1992-03-05 | 1992-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-04 | 1996-03-05 | 1996-09-04 | $7700.00 | Window Closed / Lapsed |