US4017887A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and means for passivation and isolation in semiconductor devices
Assignee: United States Department of the Air Force
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Filing: 1974-12-20
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Granted: 1977-04-12
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Expires: 1994-12-20
Abstract
Abstract The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device.
Inventors
- 👤 D. Eirug Davies
- 👤 Sven A. Roosild
- 👤 Russell P. Dolan, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:10
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P30/208; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S257/00; Y10S257/919
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
126 words
A radiation resistant semiconductor device comprising: a wafer of n-type gallium arsenide semiconductor material; islands of p-type material located in the wafer and forming a portion of the surface thereof, said p and n material so positioned as to form p-n junctions; implanted regions of compensating chromium ions having a concentration between 10 14 to 10 18 ions per cubic centimeter, said ions being of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer of carrier depleted gallium arsenide, having a resistivity of between 10 6 and 10 9 ohm centimeters, extending to the surface of the wafer and surrounding said islands of p material; and contact means affixed to the n and p material for attaching electrical conductors.
Claim 2
Dependent Claim
126 words
A radiation resistant semiconductor device comprising: a wafer of n-type gallium arsenide semiconductor material; islands of p-type material located in the wafer and forming a portion of the surface thereof, said p and n material so positioned as to form p-n junctions; implanted regions of compensating chromium ions having a concentration between 10 14 to 10 18 ions per cubic centimeter, said ions being of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer of carrier depleted gallium arsenide, having a resistivity of between 10 6 and 10 9 ohm centimeters, extending to the surface of the wafer and surrounding said islands of p material; and contact means affixed to the n and p material for attaching electrical conductors.
Claim 3
Dependent Claim
31 words
A radiation resistant semiconductor device according to claim 1 wherein said regions of compensating ions comprise, iron ions in a concentration between 10 14 to 10 18 ions per cubic centimeter.
Claim 4
Dependent Claim
123 words
A radiation resistant semiconductor device comprising; a wafer of gallium arsenide semiconductor material, having a first layer containing n type dopants and a second layer containing p type dopants and together said portions forming a p-n junction; a region of compensating chromium ions having a concentration between 10 14 to 10 18 ions per cubic centimeter implanted in said n type portion, said ions being of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer of carrier depleted gallium arsenide having a resistivity of between 10 6 and 10 19 ohm-centimeters, parallel and in close spaced relation to the p-n junction, and contact means affixed to the first and second portions for affixing electrical conductors thereto.
Claim 5
Dependent Claim
123 words
A radiation resistant semiconductor device comprising; a wafer of gallium arsenide semiconductor material, having a first layer containing n type dopants and a second layer containing p type dopants and together said portions forming a p-n junction; a region of compensating chromium ions having a concentration between 10 14 to 10 18 ions per cubic centimeter implanted in said n type portion, said ions being of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer of carrier depleted gallium arsenide having a resistivity of between 10 6 and 10 19 ohm-centimeters, parallel and in close spaced relation to the p-n junction, and contact means affixed to the first and second portions for affixing electrical conductors thereto.
Claim 6
Dependent Claim
31 words
A radiation resistant semiconductor device according to claim 3 wherein said regions of compensating ions comprise, iron ions in a concentration between 10 14 to 10 18 ions per cubic centimeter.
Claim 7
Independent Claim
131 words
A method of forming radiation resistant gallium arsenide semiconductor devices comprising the steps of: forming areas of p type material on an n doped semiconductor wafer; covering the p type areas with an ion impervious mask; placing the wafer in an ion accelerating means; implanting compensating chromium ions in the n type wafer having a concentration between 10 14 and 10 18 ions per cubic centimeter, whereby said implanted ions form a layer surrounding said areas of p type material having ions of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer having a resistivity of between 10 6 and 10 9 ohm-centimeters, causing a reduced number of photo induced ions to be generated by intense radiation; removing the mask, and affixing electrical contacts.
Claim 8
Independent Claim
131 words
A method of forming radiation resistant gallium arsenide semiconductor devices comprising the steps of: forming areas of p type material on an n doped semiconductor wafer; covering the p type areas with an ion impervious mask; placing the wafer in an ion accelerating means; implanting compensating chromium ions in the n type wafer having a concentration between 10 14 and 10 18 ions per cubic centimeter, whereby said implanted ions form a layer surrounding said areas of p type material having ions of insufficient concentration to form a new compound, but of sufficient concentration to form a semi-insulating layer having a resistivity of between 10 6 and 10 9 ohm-centimeters, causing a reduced number of photo induced ions to be generated by intense radiation; removing the mask, and affixing electrical contacts.
References Cited (Backward Citations)
US3390019A
Cited
US3515956A
Cited
US3653978A
Cited
US3586542A
Cited
US3622382A
Cited
US3666548A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-11 | 1980-10-11 | 1981-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-11 | 1984-10-11 | 1985-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-11 | 1988-10-11 | 1989-04-12 | $7700.00 | Window Closed / Lapsed |