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US7005392B2
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Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
Assignee: Advanced Technology Materials Inc
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Filing: 2001-03-30
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Granted: 2006-02-28
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Expires: 2021-03-30
Abstract
Abstract A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR 1 R 2 ) x , wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, C 1 –C 8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula H x Si(NR 1 R 2 ) 4-x , wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R 1 and R 2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, and C 1 –C 8 perfluoroalkyl. By comparison with the standard SiO 2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
Inventors
- 👤 Thomas H. Baum
- 👤 Chongying Xu
- 👤 Bryan C. Hendrix
- 👤 Jeffrey F. Roeder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:09
CPC Classifications
C; C07; C07F; C07F7/00; H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; C07F7/003; C07F7/02; C07F7/025; C07F7/08; C07F7/10; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/083; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/405; H10D64/01342; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6928; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/693; H10P14/6938; H10P14/6939; H10P14/69392
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
138 words
A liquid CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one metalloamide source reagent compound having a formula: M(NR 2 ) x (NR′ 2 ) y wherein M is selected from the group consisting of: Y, Hf, La, and Ta; N is nitrogen, each of R and R′ is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, C 1 –C 8 perfluoroalkyl, and alkylsilyl; (NR 2 ) x and (NR′ 2 ) y are different amino ligands and R′ is different from R; x is from 1 to 5; y is from 1 to 5; and x+y is equal to the oxidation state of metal M, and a solvent medium, wherein the metalloamide source reagent compound is soluble or suspendable therein.
Claim 2
Dependent Claim
138 words
A liquid CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including at least one metalloamide source reagent compound having a formula: M(NR 2 ) x (NR′ 2 ) y wherein M is selected from the group consisting of: Y, Hf, La, and Ta; N is nitrogen, each of R and R′ is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, C 1 –C 8 perfluoroalkyl, and alkylsilyl; (NR 2 ) x and (NR′ 2 ) y are different amino ligands and R′ is different from R; x is from 1 to 5; y is from 1 to 5; and x+y is equal to the oxidation state of metal M, and a solvent medium, wherein the metalloamide source reagent compound is soluble or suspendable therein.
Claim 3
Dependent Claim
20 words
The liquid CVD precursor composition according to claim 1 , wherein one of the amino ligands is NMe 2 .
Claim 4
Dependent Claim
20 words
The liquid CVD precursor composition according to claim 1 , wherein one of the amino ligands is NEt 2 .
Claim 5
Dependent Claim
45 words
The liquid CVD precursor composition according to claim 1 , wherein the solvent medium is selected from the group consisting of: ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers and combinations of two or more of the foregoing.
Claim 6
Dependent Claim
15 words
The liquid CVD precursor composition according to claim 4 , wherein the solvent is octane.
Claim 7
Dependent Claim
27 words
The liquid CVD precursor composition according to claim 1 , wherein the metalloamide source reagent compound is injected by liquid delivery into a chemical vapor deposition chamber.
Claim 8
Dependent Claim
26 words
The liquid CVD precursor composition according to claim 1 , wherein the metalloamide source reagent compounds is delivered by bubbler into a chemical vapor deposition chamber.
Claim 9
Dependent Claim
20 words
The liquid CVD precursor composition according to claim 1 , wherein the precursor composition comprises multiple metalloamide source reagent compounds.
Claim 10
Dependent Claim
142 words
A liquid CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent mixture including a metalloamide source reagent compound having a formula: M(NR 2 ) x (NR′ 2 ) y wherein M is selected from the group consisting of: Y, Hf, La, and Ta,; N is nitrogen; each of R and R′ is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, C 1 C 8 perfluoroalkyl, and alkylsilyl; M(NR 2 ) x and (NR′ 2 ) X are different amino ligands and R′ is different from R; x is from 1 to 5; y is from 1 to 5; and x+y is equal to the oxidation state of metal M, and a solvent medium, wherein the metalloamide source reagent compound is soluble or suspendable therein.
Claim 11
Dependent Claim
142 words
A liquid CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent mixture including a metalloamide source reagent compound having a formula: M(NR 2 ) x (NR′ 2 ) y wherein M is selected from the group consisting of: Y, Hf, La, and Ta,; N is nitrogen; each of R and R′ is independently selected from the group consisting of H, aryl, perfluoroaryl, C 1 –C 8 alkyl, C 1 C 8 perfluoroalkyl, and alkylsilyl; M(NR 2 ) x and (NR′ 2 ) X are different amino ligands and R′ is different from R; x is from 1 to 5; y is from 1 to 5; and x+y is equal to the oxidation state of metal M, and a solvent medium, wherein the metalloamide source reagent compound is soluble or suspendable therein.
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