Patent US6984592B2 successfully refreshed from Google Patents.
US6984592B2
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Systems and methods for forming metal-doped alumina
Assignee: Micron Technology Inc
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Filing: 2002-08-28
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Granted: 2006-01-10
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Expires: 2022-08-28
Abstract
Abstract A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H10P14/66; H10P14/668; H10B; H10B10/00; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69396; H10P14/69397; H10P32/00; H10P32/20
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
140 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and contacting the precursor compounds to form a metal-doped aluminum oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 2
Independent Claim
140 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and contacting the precursor compounds to form a metal-doped aluminum oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein the metal-doped aluminum oxide layer is a dielectric layer.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein M is selected from the group of metals consisting of Y, La, Ce, Pr, Gd, and mixtures thereof.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the metal-doped aluminum oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein R 1 , R 2 , and R 3 are each independently organic groups having 1-10 carbon atoms.
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein at least one Y is R 1 and each R 1 is independently a (C1-C4) organic group.
Claim 9
Dependent Claim
28 words
The method of claim 1 wherein at least one Y is NR 2 R 3 and R 2 and R 3 are each independently a (C1-C4) organic group.
Claim 10
Dependent Claim
43 words
The method of claim 1 wherein the “keto” ligand is of the formula (Formula IV): wherein Z is O or NR 7 and each R 4 , R 5 , R 6 , and R 7 is independently hydrogen or an organic group.
Claim 11
Dependent Claim
9 words
The method of claim 9 wherein Z is oxygen.
Claim 12
Dependent Claim
11 words
The method of claim 1 wherein y is 2 to 3.
Claim 13
Dependent Claim
26 words
The method of claim 1 wherein the ratio of yttrium, scandium, or a lanthanide to aluminum in the metal-doped aluminum oxide layer is less than 3:5.
Claim 14
Dependent Claim
22 words
The method of claim 12 wherein the ratio is about 1:99 to about 6:94 of yttrium, scandium, or a lanthanide to aluminum.
Claim 15
Dependent Claim
13 words
The method of claim 13 wherein the metal-doped aluminum oxide layer is amorphous.
Claim 16
Dependent Claim
13 words
The method of claim 1 wherein the metal-doped aluminum oxide layer is amorphous.
Claim 17
Independent Claim
157 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 18
Independent Claim
157 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semiconductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly.
Claim 19
Dependent Claim
19 words
The method of claim 16 wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 20
Dependent Claim
24 words
The method of claim 16 wherein M is selected from the group of metals consisting of Y, La, Ce, Pr, Gd, and mixtures thereof.
Claim 21
Dependent Claim
20 words
The method of claim 16 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 22
Dependent Claim
23 words
The method of claim 19 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.
Claim 23
Dependent Claim
28 words
The method of claim 19 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 24
Dependent Claim
26 words
The method of claim 16 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 25
Dependent Claim
27 words
The method of claim 22 wherein during the atomic layer deposition process the metal-containing layer is formed by alternately introducing the precursor compounds during each deposition cycle.
Claim 26
Dependent Claim
23 words
The method of claim 22 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 27
Dependent Claim
29 words
The method of claim 22 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 torr.
Claim 28
Independent Claim
132 words
A method of forming a metal-doped aluminum oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and contacting the precursor compounds to form a metal-doped aluminum oxide layer on the substrate using a vapor deposition process.
Claim 29
Independent Claim
132 words
A method of forming a metal-doped aluminum oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and contacting the precursor compounds to form a metal-doped aluminum oxide layer on the substrate using a vapor deposition process.
Claim 30
Dependent Claim
24 words
The method of claim 26 wherein M is selected from the group of metals consisting of Y, La, Ce, Pr, Gd, and mixtures thereof.
Claim 31
Dependent Claim
22 words
The method of claim 26 wherein the metal-doped aluminum oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 32
Dependent Claim
24 words
The method of claim 26 wherein R 1 , R 2 , and R 3 are each independently organic groups having 1-10 carbon atoms.
Claim 33
Dependent Claim
23 words
The method of claim 26 wherein at least one Y is R 1 and each R 1 is independently a (C1-C4) organic group.
Claim 34
Dependent Claim
28 words
The method of claim 26 wherein at least one Y is NR 2 R 3 and R 2 and R 3 are each independently a (C1-C4) organic group.
Claim 35
Dependent Claim
42 words
The method of claim 26 wherein the “keto” ligand is of the formula (Formula IV): wherein Z is O or NR 7 and each R 4 , R 5 ,R 6 , and R 7 is independently hydrogen or an organic group.
Claim 36
Dependent Claim
9 words
The method of claim 32 wherein Z is oxygen.
Claim 37
Dependent Claim
11 words
The method of claim 26 wherein y is 2 to 3.
Claim 38
Dependent Claim
26 words
The method of claim 26 wherein the ratio of yttrium, scandium, or a lanthanide to aluminum in the metal-doped aluminum oxide layer is less than 3:5.
Claim 39
Dependent Claim
22 words
The method of claim 35 wherein the ratio is about 1:99 to about 6:94 of yttrium, scandium, or a lanthanide to aluminum.
Claim 40
Dependent Claim
13 words
The method of claim 36 wherein the metal-doped aluminum oxide layer is amorphous.
Claim 41
Independent Claim
141 words
A method of forming a metal-doped aluminum oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal-doped aluminum oxide layer on the substrate.
Claim 42
Independent Claim
141 words
A method of forming a metal-doped aluminum oxide layer on a substrate, the method comprising: providing a substrate; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the substrate to form a metal-doped aluminum oxide layer on the substrate.
Claim 43
Dependent Claim
20 words
The method of claim 38 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 44
Dependent Claim
26 words
The method of claim 38 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 45
Independent Claim
152 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 46
Independent Claim
152 words
A method of manufacturing a memory device structure comprising: providing a substrate having a first electrode thereon; providing at least one precursor compound of the formula M(keto) y (Formula I) and at least one precursor compound of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M; and vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate; and forming a second electrode on the dielectric layer.
Claim 47
Dependent Claim
20 words
The method of claim 41 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 48
Dependent Claim
26 words
The method of claim 41 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 49
Dependent Claim
118 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more precursor compounds having the formula M(keto) y (Formula I); and one or more vessels comprising one or more one precursor compounds of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M.
Claim 50
Dependent Claim
118 words
A vapor deposition apparatus comprising: a vapor deposition chamber having a substrate positioned therein; one or more vessels comprising one or more precursor compounds having the formula M(keto) y (Formula I); and one or more vessels comprising one or more one precursor compounds of the formula AlY 3 (Formula II), wherein: M is yttrium, scandium, or a lanthanide metal; each “keto” is independently a diketonate or ketoimine ligand; each Y group is independently R 1 or an amine of the formula (NR 2 R 3 ), wherein each R 1 , R 2 , and R 3 is independently hydrogen or an organic group; y is 0 to 5 and is dependent on the oxidation state of M.
Claim 51
Dependent Claim
12 words
The apparatus of claim 44 wherein the substrate is a silicon wafer.
Claim 52
Dependent Claim
25 words
The apparatus of claim 44 further comprising one or more sources of an inert carrier gas for transferring the precursors to the vapor deposition chamber.
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