US6902962B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon-on-insulator chip with multiple crystal orientations
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 2003-04-04
•
Granted: 2005-06-07
•
Expires: 2023-04-04
Abstract
Abstract A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a second silicon island with a surface of a second crystal orientation also overlies the insulator layer. In one embodiment, the silicon-on-insulator chip also includes a first transistor of a first conduction type formed on the first silicon island, and a second transistor of a second conduction type formed on the second silicon island. For example, the first crystal orientation can be (110) while the first transistor is a p-channel transistor, and the second crystal orientation can be (100) while the second transistor is an n-channel transistor.
Inventors
- 👤 Yee-Chia Yeo
- 👤 Fu-Liang Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:32
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; H10D86/01
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
65 words
A method of forming a silicon-on-insulator chip, the method comprising: providing a silicon-on-insulator substrate including a silicon layer of a first crystal orientation overlying an insulator layer, the silicon layer including a first and a second region; forming an amorphous silicon region in the second region of the silicon layer; and recrystallizing the amorphous silicon region to form a region with a second crystal orientation.
Claim 2
Independent Claim
65 words
A method of forming a silicon-on-insulator chip, the method comprising: providing a silicon-on-insulator substrate including a silicon layer of a first crystal orientation overlying an insulator layer, the silicon layer including a first and a second region; forming an amorphous silicon region in the second region of the silicon layer; and recrystallizing the amorphous silicon region to form a region with a second crystal orientation.
Claim 3
Dependent Claim
61 words
The method of claim 1 and further comprising, after the recrystallizing the amorphous silicon region: forming a first silicon island of the first crystal orientation and a second silicon island of the second orientation; and forming a transistor of a first conduction type on the first silicon island and a transistor of a second conduction type on the second silicon island.
Claim 4
Dependent Claim
44 words
The method of claim 1 wherein the first crystal orientation is (110) and the second crystal orientation is (100) and wherein the transistor of the first conduction type is a p-channel transistor and the transistor of the second conduction type is a n-channel transistor.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the first crystal orientation is (110) and the second crystal orientation is (100).
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein the insulator layer comprises aluminum oxide.
Claim 7
Dependent Claim
18 words
The method of claim 5 wherein the aluminum oxide has a crystal orientation of (0, 1, 1, 2).
Claim 8
Dependent Claim
23 words
The method of claim 1 wherein the silicon layer has a thickness in the range of about 10 angstroms to about 500 angstroms.
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein the forming the amorphous silicon region comprises implanting ions into the second region of the silicon layer.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein implanting ions comprises implanting silicon ions.
Claim 11
Dependent Claim
32 words
The method of claim 8 wherein the silicon layer has a thickness and wherein implanting ions comprises implanting ions to a depth of about half of the thickness of the silicon layer.
Claim 12
Dependent Claim
28 words
The method of claim 1 wherein providing a silicon-on-insulator substrate comprises providing a silicon-on-insulator substrate with a silicon layer overlying an insulator layer that includes a crystalline surface.
Claim 13
Dependent Claim
24 words
The method of claim 11 wherein recrystallizing the amorphous silicon region comprises recrystallizing using the crystalline surface of the insulator layer as a seed.
Claim 14
Dependent Claim
49 words
The method of claim 1 wherein providing a silicon-on-insulator substrate comprises providing a silicon-on-insulator substrate with a first silicon layer overlying a second silicon layer, the second silicon layer overlying the insulator layer and wherein forming an amorphous silicon region comprises amorphosizing a portion of the first silicon layer.
Claim 15
Dependent Claim
21 words
The method of claim 13 wherein recrystallizing the amorphous silicon region comprises recrystallizing using the second silicon layer as a seed.
Claim 16
Independent Claim
75 words
A method of forming a silicon-on-insulator chip, the method comprising: providing a silicon-on-insulator substrate including a first silicon layer of a first crystal orientation overlying a second silicon layer of a second crystal orientation, said second silicon layer overlying an insulator layer; amorphosizing a portion of the first silicon layer in a predetermined region to form an amorphous silicon region; and recrystallizing the amorphous silicon region to form a region with the second crystal orientation.
Claim 17
Independent Claim
75 words
A method of forming a silicon-on-insulator chip, the method comprising: providing a silicon-on-insulator substrate including a first silicon layer of a first crystal orientation overlying a second silicon layer of a second crystal orientation, said second silicon layer overlying an insulator layer; amorphosizing a portion of the first silicon layer in a predetermined region to form an amorphous silicon region; and recrystallizing the amorphous silicon region to form a region with the second crystal orientation.
Claim 18
Dependent Claim
61 words
The method of claim 15 , further comprising: forming a first silicon island with a surface of the first crystal orientation and a second silicon island with a surface of the second crystal orientation; and forming a transistor of a first conduction type on the first silicon island and a transistor of a second conduction type on the second silicon island.
Claim 19
Dependent Claim
19 words
The method of claim 16 wherein the first crystal orientation is (110) and the second crystal orientation is (100).
Claim 20
Dependent Claim
29 words
The method of claim 17 wherein the transistor of the first conduction type is a p-channel transistor and the transistor of the second conduction type is a n-channel transistor.
Claim 21
Dependent Claim
24 words
The method of claim 15 wherein the first silicon layer has a thickness in the range of about 10 angstroms to about 100 angstroms.
Claim 22
Dependent Claim
24 words
The method of claim 15 wherein the second silicon layer has a thickness in the range of about 10 angstroms to about 1000 angstroms.
Claim 23
Dependent Claim
12 words
The method of claim 15 wherein the insulator layer comprises a dielectric.
Claim 24
Dependent Claim
12 words
The method of claim 15 wherein the insulator layer comprises silicon oxide.
Claim 25
Independent Claim
147 words
A method of fabricating a silicon-on-insulator chip, the method comprising: providing a substrate with an insulator layer disposed thereon; forming a first silicon layer over the insulator layer, the first silicon layer having a thickness of less than 50 angstroms, the first silicon layer having a first crystal orientation; forming a second silicon layer over the first silicon layer, the second silicon layer having a thickness of less than 50 angstroms, the second silicon layer having a second crystal orientation that is different than the first crystal orientation; forming a first silicon island with a surface of the first crystal orientation, the first silicon island overlying the insulator layer and being formed from the first silicon layer; and forming a second silicon island with a surface of the second crystal orientation, the second silicon island overlying the insulator layer and being formed from the second silicon layer.
Claim 26
Independent Claim
147 words
A method of fabricating a silicon-on-insulator chip, the method comprising: providing a substrate with an insulator layer disposed thereon; forming a first silicon layer over the insulator layer, the first silicon layer having a thickness of less than 50 angstroms, the first silicon layer having a first crystal orientation; forming a second silicon layer over the first silicon layer, the second silicon layer having a thickness of less than 50 angstroms, the second silicon layer having a second crystal orientation that is different than the first crystal orientation; forming a first silicon island with a surface of the first crystal orientation, the first silicon island overlying the insulator layer and being formed from the first silicon layer; and forming a second silicon island with a surface of the second crystal orientation, the second silicon island overlying the insulator layer and being formed from the second silicon layer.
Claim 27
Dependent Claim
20 words
The method of claim 23 wherein the first crystal orientation is (023), and wherein the second crystal orientation is (100).
Claim 28
Dependent Claim
27 words
The method of claim 24 and further comprising forming a p-channel transistor in the first silicon island and forming an n-channel transistor in the second silicon island.
Claim 29
Dependent Claim
24 words
The method of claim 23 wherein the forming of the second silicon layer comprises forming a (110) silicon layer overlying a (100) silicon layer.
Claim 30
Dependent Claim
18 words
The method of claim 23 wherein the first and second silicon islands each have rounded or faceted corners.
Claim 31
Dependent Claim
13 words
The method of claim 23 wherein the insulator layer comprises a crystalline dielectric.
Claim 32
Dependent Claim
23 words
The method of claim 23 wherein the insulator layer has a crystalline layer at the interface with the first and second silicon islands.
Claim 33
Dependent Claim
12 words
The method of claim 23 wherein the insulator layer comprises silicon oxide.
Claim 34
Dependent Claim
12 words
The method of claim 23 wherein the insulator layer comprises aluminum oxide.
Claim 35
Independent Claim
117 words
A method of fabricating a silicon-on-insulator chip, the method comprising: providing a substrate with an insulator layer disposed thereon; forming a first silicon island with a surface of a first crystal orientation, the first silicon island overlying the insulator layer; and forming a second silicon island with a surface of a second crystal orientation, the second silicon island overlying the insulator layer, wherein the first and second silicon islands have different thicknesses; wherein forming the first silicon island comprises forming a plurality of silicon layers overlying one another using a wafer bonding technique that includes a hydrogen implant step, and wherein forming a plurality of silicon layers comprises forming a (110) silicon layer overlying (100) silicon layer.
Claim 36
Independent Claim
117 words
A method of fabricating a silicon-on-insulator chip, the method comprising: providing a substrate with an insulator layer disposed thereon; forming a first silicon island with a surface of a first crystal orientation, the first silicon island overlying the insulator layer; and forming a second silicon island with a surface of a second crystal orientation, the second silicon island overlying the insulator layer, wherein the first and second silicon islands have different thicknesses; wherein forming the first silicon island comprises forming a plurality of silicon layers overlying one another using a wafer bonding technique that includes a hydrogen implant step, and wherein forming a plurality of silicon layers comprises forming a (110) silicon layer overlying (100) silicon layer.
Claim 37
Dependent Claim
37 words
The method of claim 32 and further comprising: forming a first transistor of a first conduction type on the first silicon island; and forming a second transistor of a second conduction type on the second silicon island.
Claim 38
Dependent Claim
36 words
The method of claim 33 wherein the first crystal orientation is (110) and the first transistor is a p-channel transistor, and wherein the second crystal orientation is (100) and the second transistor is a n-channel transistor.
Claim 39
Dependent Claim
20 words
The method of claim 32 wherein the (110) silicon layer has a thickness of about 10 to about 500 angstroms.
Claim 40
Independent Claim
69 words
A method of forming semiconductor chip, the method comprising: providing a silicon substrate having a first crystal orientation; forming a silicon layer of a second crystal orientation on the silicon substrate, the silicon layer including a first and a second region; forming an amorphous silicon region in the second region of the silicon layer; and recrystallizing the amorphous silicon region to form a region with the first crystal orientation.
Claim 41
Independent Claim
69 words
A method of forming semiconductor chip, the method comprising: providing a silicon substrate having a first crystal orientation; forming a silicon layer of a second crystal orientation on the silicon substrate, the silicon layer including a first and a second region; forming an amorphous silicon region in the second region of the silicon layer; and recrystallizing the amorphous silicon region to form a region with the first crystal orientation.
Claim 42
Dependent Claim
62 words
The method of claim 36 and further comprising, after the recrystallizing the amorphous silicon region: forming a first silicon island of the first crystal orientation and a second silicon island of the second crystal orientation; and forming a transistor of a first conduction type on the first silicon island and a transistor of a second conduction type on the second silicon island.
Claim 43
Dependent Claim
44 words
The method of claim 37 wherein the first crystal orientation is (110) and the second crystal orientation is (100) and wherein the transistor of the first conduction type is a p-channel transistor and the transistor of the second conduction type is a n-channel transistor.
Claim 44
Dependent Claim
19 words
The method of claim 36 wherein the first crystal orientation is (110) and the second crystal orientation is (100).
Claim 45
Dependent Claim
23 words
The method of claim 36 wherein the silicon layer has a thickness in the range of about 10 angstroms to about 500 angstroms.
Claim 46
Independent Claim
62 words
A method of forming a semiconductor device, the method comprising: providing a substrate including a semiconductor layer overlying the substrate, the semiconductor layer having a first crystal orientation; implanting ions into a portion of the semiconductor layer; and recrystallizing the portion of the semiconductor layer so that the portion has a second crystal orientation that is different than the first crystal orientation.
Claim 47
Independent Claim
62 words
A method of forming a semiconductor device, the method comprising: providing a substrate including a semiconductor layer overlying the substrate, the semiconductor layer having a first crystal orientation; implanting ions into a portion of the semiconductor layer; and recrystallizing the portion of the semiconductor layer so that the portion has a second crystal orientation that is different than the first crystal orientation.
Claim 48
Dependent Claim
21 words
The method of claim 41 wherein the semiconductor layer comprises a silicon layer and wherein implanting ions comprises implanting silicon ions.
Claim 49
Dependent Claim
21 words
The method of claim 41 wherein the semiconductor layer comprises a silicon layer and wherein implanting ions comprises implanting germanium ions.
Claim 50
Dependent Claim
21 words
The method of claim 41 wherein the semiconductor layer comprises a silicon layer and wherein implanting ions comprises implanting argon ions.
Claim 51
Dependent Claim
21 words
The method of claim 41 wherein recrystallizing comprises recrystallizing the semiconductor layer using an underlying semiconductor layer as a seed layer.
Claim 52
Dependent Claim
21 words
The method of claim 41 wherein recrystallizing comprises recrystallizing the semiconductor layer using an underlying insulating layer as a seed layer.
Claim 53
Dependent Claim
57 words
The method of claim 41 and further comprising, after the recrystallizing: forming a first silicon island of the first crystal orientation and a second silicon island of the second orientation; and forming a transistor of a first conduction type on the first silicon island and a transistor of a second conduction type on the second silicon island.
Claim 54
Dependent Claim
44 words
The method of claim 47 wherein the first crystal orientation is (110) and the second crystal orientation is (100) and wherein the transistor of the first conduction type is a p-channel transistor and the transistor of the second conduction type is a n-channel transistor.
Claim 55
Dependent Claim
19 words
The method of claim 41 wherein the first crystal orientation is (110) and the second crystal orientation is (100).
References Cited (Backward Citations)
US4768076A
Cited
US4857986A
Cited
US4933298A
Cited
US5013681A
Cited
US5024723A
Cited
US5374564A
Cited
US5384473A
Cited
US5213986A
Cited
US5769991A
Cited
US5659192A
Cited
US5759898A
Cited
US5863830A
Cited
US6407406B1
Cited
US6335231B1
Cited
US6355541B1
Cited
US6483171B1
Cited
US6368938B1
Cited
US6486008B1
Cited
US6593634B2
Cited
US6429061B1
Cited
US6414355B1
Cited
US6448114B1
Cited
US6410371B1
Cited
US20020140031A1
Cited
US6358806B1
Cited
US20030102518A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-06-06 | 2008-12-06 | 2009-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-06-06 | 2012-12-06 | 2013-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-06-06 | 2016-12-06 | 2017-06-07 | $7700.00 | Window Closed / Lapsed |