US6410371B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer
Assignee: GlobalFoundries US Inc
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Filing: 2001-02-26
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Granted: 2002-06-25
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Expires: 2021-02-26
Abstract
Abstract A method of forming a semiconductor-on-insulator (SOI) wafer. The method includes the steps of providing a first wafer, the first wafer having a silicon substrate and an oxide layer disposed thereon; providing a second wafer, the second wafer having a silicon substrate, the substrate of the second wafer having a silicon-germanium layer disposed thereon, a silicon layer disposed on the silicon-germanium layer and an oxide layer disposed on the silicon layer; wafer bonding the first and second wafers; and removing an undesired portion of the substrate from the second wafer to form an upper silicon layer. The resulting SOI wafer structure is also disclosed.
Inventors
- 👤 Bin Yu
- 👤 William G. En
- 👤 Judy Xilin An
- 👤 Concetta E. Riccobene
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:39
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6748; H10D30/751; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
94 words
A method of forming a semiconductor-on-insulator (SOI) wafer, comprising the steps of: providing a first wafer, the first wafer having a silicon substrate and an oxide layer disposed thereon; providing a second wafer, the second wafer having a silicon substrate, the substrate of the second wafer having a silicon-germanium layer disposed thereon, a silicon layer disposed on the silicon-germanium layer and an oxide layer disposed on the silicon layer; wafer bonding the first and second wafers; and removing an undesired portion of the substrate from the second wafer to form an upper silicon layer.
Claim 2
Independent Claim
94 words
A method of forming a semiconductor-on-insulator (SOI) wafer, comprising the steps of: providing a first wafer, the first wafer having a silicon substrate and an oxide layer disposed thereon; providing a second wafer, the second wafer having a silicon substrate, the substrate of the second wafer having a silicon-germanium layer disposed thereon, a silicon layer disposed on the silicon-germanium layer and an oxide layer disposed on the silicon layer; wafer bonding the first and second wafers; and removing an undesired portion of the substrate from the second wafer to form an upper silicon layer.
Claim 3
Dependent Claim
27 words
The method according to claim 1 , wherein the oxide layer disposed on the substrate of the first wafer is formed by thermal oxidation of the substrate.
Claim 4
Dependent Claim
22 words
The method according to claim 1 , wherein the silicon-germanium layer is formed on the substrate of the second wafer using epitaxy.
Claim 5
Dependent Claim
20 words
The method according to claim 3 , wherein the silicon layer disposed on the silicon-germanium layer is formed using epitaxy.
Claim 6
Dependent Claim
25 words
The method according to claim 4 , wherein the oxide layer disposed on the silicon layer is formed by thermal oxidation of the silicon layer.
Claim 7
Dependent Claim
27 words
The method according to claim 1 , wherein oxide layer disposed on the substrate of the first wafer is about 1000 Å to about 4000 Å thick.
Claim 8
Dependent Claim
28 words
The method according to claim 1 , Wherein the silicon-germanium layer formed on the substrate of the second wafer is about 200 Å to about 400 Å thick.
Claim 9
Dependent Claim
25 words
The method according to claim 1 , wherein the silicon layer disposed on the silicon-germanium layer is about 100 Å to about 200 Å thick.
Claim 10
Dependent Claim
25 words
The method according to claim 1 , wherein the oxide layer disposed on the silicon layer is about 100 Å to about 200 Å thick.
Claim 11
Dependent Claim
21 words
The method according to claim 1 , wherein the upper silicon layer is about 100 Å to about 200 Å thick.
Claim 12
Dependent Claim
39 words
The method according to claim 1 , wherein the atomic concentration of silicon in the silicon-germanium layer is about 30% to about 70% and the atomic concentration of germanium in the silicon-germanium layer is about 30% to about 70%.
Claim 13
Dependent Claim
16 words
The method according to claim 1 , wherein the silicon-germanium of the silicon-germanium layer is strained.
Claim 14
Dependent Claim
27 words
The method according to claim 1 , further comprising the step of forming an active device, the active device having a channel formed from the silicon-germanium layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-24 | 2005-12-24 | 2006-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-24 | 2009-12-24 | 2010-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-24 | 2013-12-24 | 2014-06-25 | $7700.00 | Window Closed / Lapsed |