US6486008B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of a thin film on a substrate
Assignee: FORMOSA SOI Ltd
•
Filing: 2000-08-01
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Granted: 2002-11-26
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Expires: 2020-08-01
Abstract
Abstract The invention provides a thin-film transferring method, which can separate a thin film from a supply substrate and transfer it to a demand substrate. The method is practiced first by a process of ion implantation, which implants ions in a supply substrate to form an ion separation layer under implanted surface, and then followed by a wafer-bonding method, which joins the supply substrate with a demand substrate. The resulting bonded structure is to be going through a high-energy ion activation activity, in which the implanted ions incorporate into aerial particles, which fill the cleaves, resulting in a separation film, which is to be transferred to the demand substrate in wafer bonding process. As a part of this invention, the cooling device can remove the heat current produced from the high-energy ion activation, so as to prevent the bonded structure—made from different materials—being damaged by heat due to the different thermal expansion coefficient.
Inventors
- 👤 Tien-Hsi Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:41
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
131 words
A thin film transferring method comprising: providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of the supply substrate into which ions are implanted; and a remnant substrate, which is the remaining portion of the supply substrate without the thin film; performing a wafer bonding process to bond a demand substrate onto the supply substrate, forming a bonded structure; and using a high frequency alternating electric field, or a high frequency alternating electromagnetic field, to separate the thin film from the remnant substrate, the thin film transferring from the surface of the supply substrate to the surface of the demand substrate.
Claim 2
Dependent Claim
131 words
A thin film transferring method comprising: providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of the supply substrate into which ions are implanted; and a remnant substrate, which is the remaining portion of the supply substrate without the thin film; performing a wafer bonding process to bond a demand substrate onto the supply substrate, forming a bonded structure; and using a high frequency alternating electric field, or a high frequency alternating electromagnetic field, to separate the thin film from the remnant substrate, the thin film transferring from the surface of the supply substrate to the surface of the demand substrate.
Claim 3
Dependent Claim
61 words
The method of claim 1 wherein the method further comprises a pre-heat process performed after the formation of the ion separation layer, the pre-heat process being used both to polymerize the implanted ions or the molecular ions, and to produce crystal fissures; wherein the resulting stress on the surface of the supply substrate causes bubbles to form within the supply substrate.
Claim 4
Dependent Claim
38 words
The method of claim 1 wherein the ion implantation process is a standard ion implantation process, a plasma immersion ion implantation process, or a phase-in ion implantation process that is performed at different temperatures for each process phase.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the ions used in the ion implantation process comprise hydrogen ions, oxygen ions, nitrogen ions, fluorine ions, chlorine ions, helium ions, or neon ions.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the ions are used in the ion implantation process are ions or molecular ions.
Claim 7
Dependent Claim
34 words
The method of claim 1 wherein the wafer bonding process is a direct bonding process, an anodic bonding process, a low temperature bonding process, a vacuum bonding process, or a plasma enhanced bonding process.
Claim 8
Dependent Claim
39 words
The method of claim 1 wherein the wafer bonding process further comprises an ionization process performed on the surface of the supply substrate to provide sufficient bonding strength for the bonding of the supply substrate to the demand substrate.
Claim 9
Dependent Claim
69 words
The method of claim 1 wherein the high frequency alternating electric field, or the high frequency alternating electromagnetic field, is generated by a microwave generating device, a radio frequency generating device, an inductive coupled device, a ultraviolet irradiative device, or other irradiative device which increase the kinetic energy of the implanted ions, molecular ions, or reactants produced by reactions between the ions and the substrate in the bonded structure.
Claim 10
Dependent Claim
45 words
The method of claim 8 wherein a microwave generating device is used to generate the high frequency alternating electromagnetic field, the frequency of the microwaves being between 2.45 MHz and 900 MHz, the microwave generating device having either a fixed frequency, or a variable frequency.
Claim 11
Dependent Claim
20 words
The method of claim 9 wherein the bonded structure is exposed to the microwave radiation for more than 1 minute.
Claim 12
Dependent Claim
44 words
The method of claim 8 wherein the kinetic energy of the implanted ions, molecular ions, or reactants produced by reactions between the ions and the substrate in the bonded structure is increased by direct excitation but not by the temperature of the bonded structure.
Claim 13
Dependent Claim
45 words
The method of claim 11 wherein a microwave generating device is used to generate the high frequency alternating electromagnetic field, the frequency of the microwaves being between 2.45 MHz and 900 MHz, the microwave generating device having either a fixed frequency, or a variable frequency.
Claim 14
Dependent Claim
20 words
The method of claim 12 wherein the bonded structure is exposed to the microwave radiation for more than 1 minute.
Claim 15
Dependent Claim
39 words
The method of claim 11 wherein a doping layer in the supply substrate is formed by an ion implantation process, a molecular-beam epitaxy (MBE) growth process, a liquid-phase epitaxy (LPE) growth process, or a vapor-phase epitaxy (VPE) growth process.
Claim 16
Dependent Claim
48 words
The method of claim 1 wherein the high frequency alternating electric field, or the high frequency alternating electromagnetic field, is generated by a microwave generating device, a radio frequency generating device, an inductive coupled device, or other devices which generate induced current from carriers in the bonded structure.
Claim 17
Dependent Claim
53 words
The method of claim 1 wherein the supply substrate further comprises a doping layer, the doping layer being used to form a various carrier concentration layer, the various carrier concentration layer generating a desired induced energy when exposed to the high frequency alternating electric field, or to the high frequency alternating electromagnetic field.
Claim 18
Dependent Claim
43 words
The method of claim 1 wherein when the bonded structure is exposed to the high frequency alternating electric field, or to the high frequency alternating electromagnetic field, a cooling device is used to keep the temperature of the bonded structure below 400° C.
Claim 19
Dependent Claim
147 words
A layer transfer method, the method comprising the following steps: providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of the supply substrate into which ions are implanted; and a remnant substrate, which is the remaining portion of the supply substrate without the thin film; performing a wafer bonding process to bond a demand substrate onto the supply substrate, forming a bonded structure; and using a high energy light beam exciting device to excite the implanted ions or molecular ions and form a separation film, then separating the thin film and the remnant substrate along the separation film to transfer the thin film from the surface of the supply substrate onto the surface of the demand substrate.
Claim 20
Dependent Claim
147 words
A layer transfer method, the method comprising the following steps: providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of the supply substrate into which ions are implanted; and a remnant substrate, which is the remaining portion of the supply substrate without the thin film; performing a wafer bonding process to bond a demand substrate onto the supply substrate, forming a bonded structure; and using a high energy light beam exciting device to excite the implanted ions or molecular ions and form a separation film, then separating the thin film and the remnant substrate along the separation film to transfer the thin film from the surface of the supply substrate onto the surface of the demand substrate.
Claim 21
Dependent Claim
33 words
The method of claim 18 wherein the ion implantation process is a phase-in ion implantation process, the process being used to implant ions into the supply substrate using at least two different temperatures.
Claim 22
Dependent Claim
118 words
The method of claim 18 wherein the supply substrate is made of silicon, and the ion implantation process comprises an ionized hydrogen atom (H + ) implantation performed at a temperature between 500° C. and 800° C. with a doping dosage of less than 8×10 16 /cm 2 , and the ion implantation process further comprises an ionized hydrogen atom (H + ) implantation performed at a temperature that is less than 150° C. with an implant dosage that is greater than 2×10 16 /cm 2 , or an ionized hydrogen molecular (H 2 + ) implantation performed at a temperature that is less than 150° C. with an implant dosage greater than 1×10 16 /cm 2 .
Claim 23
Dependent Claim
119 words
The method of claim 18 wherein the supply substrate is made of silicon, and the ion implantation process comprises an ionized hydrogen molecular ion (H 2 + ) implantation performed at 500° C. to 700° C. with an implant dosage that is less than 4×10 16 /cm 2 , and the ion implantation process further comprises an ionized hydrogen atom ion (H + ) implantation performed at a temperature that is less than 150° C. with an implant dosage that is larger than 2×10 16 /cm 2 , or an ionized hydrogen molecular (H 2 + ) implantation performed at a temperature that is less than 150° C. with an implant dosage larger than 1×10 16 /cm 2 .
Claim 24
Dependent Claim
121 words
The method of claim 18 wherein the supply substrate is made of sapphire (Al 2 O 3 ), and the ion implantation process comprises an ionized hydrogen atom (H + ) implantation performed at 550° C. to 800° C. with an implant dosage that is less than 4×10 17 /cm 2 , and the ion implantation process further comprises another ionized hydrogen atom (H + ) implantation performed at a temperature that is less than 200° C. with an implant dosage that is greater than 6×10 16 /cm 2 , or an ionized hydrogen molecular (H 2 + ) implantation performed at a temperature that is less than 200° C. with an implant dosage larger than 3×10 16 /cm 2 .
Claim 25
Dependent Claim
122 words
The method of claim 18 wherein the supply substrate is made of sapphire (Al 2 O 3 ), and the ion implantation process comprises an ionized hydrogen molecular (H 2 + ) implantation performed at 550° C. to 800° C. with an implant dosage that is less than 7×10 16 /cm 2 , and the ion implantation process further comprises an ionized hydrogen atom (H + ) implantation performed at a temperature that is less than 200° C. and an implant dosage that is greater than 6×10 16 /cm 2 , or an ionized hydrogen molecular (H 2 + ) implantation performed at a temperature that is less than 200° C. with an implant dosage larger than 3×10 16 /cm 2 .
Claim 26
Dependent Claim
20 words
The method of claim 18 wherein the high energy light beam exciting device generates ultraviolet radiation, x-rays, or laser light.
Claim 27
Independent Claim
65 words
A method for cutting a thin film, the method comprising the following steps: performing an ion implantation process to form at least one ion separation layer in the thin film and a supply substrate; and exposing the thin film to a high frequency alternating electric field, or to a high frequency alternating electromagnetic field, to form a separating film, and then separating the thin film.
Claim 28
Independent Claim
65 words
A method for cutting a thin film, the method comprising the following steps: performing an ion implantation process to form at least one ion separation layer in the thin film and a supply substrate; and exposing the thin film to a high frequency alternating electric field, or to a high frequency alternating electromagnetic field, to form a separating film, and then separating the thin film.
Claim 29
Dependent Claim
30 words
The method of claim 25 wherein the thin film is made of Al 2 O 3 , SrTiO 3 , LaAlO 3 , SiO 2 , or insulation oxide substrate.
Claim 30
Dependent Claim
23 words
The method of claim 25 wherein the thin film is made of Si, Ge, SiGe, semiconductor, or II-VI, or III-V compound semiconductor substrate.
Claim 31
Dependent Claim
20 words
The method of claim 25 wherein the ion separation layer is parallel to the horizontal surface of the thin film.
Claim 32
Dependent Claim
20 words
The method of claim 25 wherein the ion separation layer is perpendicular to the horizontal surface of the thin film.
Claim 33
Dependent Claim
34 words
The method of claim 25 wherein the ion implantation process is a standard ion implantation, plasma immersion ion implantation process, or a phase-in ion implantation process performed at different temperatures at each process phase.
Claim 34
Dependent Claim
36 words
The method of claim 25 wherein the ions using in the ion implantation process comprise hydrogen ions, oxygen ions, nitrogen ions, fluorine ions, chlorine ions, helium ions, neon ions, or the molecular ions of these gases.
Claim 35
Dependent Claim
32 words
The method of claim 25 wherein the high frequency alternating electric field, or the high frequency alternating electromagnetic field, is a microwave field, a radio frequency field, or an inductive coupled field.
References Cited (Backward Citations)
US5374564A
Cited
US6225192B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-11-25 | 2006-05-27 | 2006-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-25 | 2010-05-27 | 2010-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-25 | 2014-05-27 | 2014-11-26 | $7700.00 | Window Closed / Lapsed |