US6355541B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for transfer of thin-film of silicon carbide via implantation and wafer bonding
Assignee: Lockheed Martin Energy Research Corp
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Filing: 1999-04-21
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Granted: 2002-03-12
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Expires: 2019-04-21
Abstract
Abstract Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.
Inventors
- 👤 Orin Wayne Holland
- 👤 Darrell Keith Thomas
- 👤 Richard Bayne Gregory
- 👤 Syd Robert Wilson
- 👤 Thomas Allen Wetteroth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:49
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
66 words
A method for transfer of a thin-film, comprising; implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region.
Claim 2
Independent Claim
66 words
A method for transfer of a thin-film, comprising; implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region.
Claim 3
Dependent Claim
22 words
The method of claim 1 , wherein the crystallographic channel is substantially parallel to a major crystal direction of the source crystal.
Claim 4
Dependent Claim
39 words
The method of claim 2 , wherein the source crystal composes a hexagonal crystal and the major crystal direction is selected from the group consisting of [1 0 0 0], [1 2 1 0], and [1 0 1 0].
Claim 5
Dependent Claim
38 words
The method of claim 1 , wherein the thin-film includes at least one member selected from the group consisting of SiC, Si, Ge, SiGe alloys diamond, GaN, GaAs, AlN, SrTiO 3 , and Al 2 O 3 .
Claim 6
Dependent Claim
12 words
The method of claim 1 , wherein the ions include hydrogen ions.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein implanting includes implanting at an elevated temperature of at least approximately 200° C.
Claim 8
Independent Claim
85 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein the method includes monitoring backscattering of the ions to align the crystal relative to a source of light-ions.
Claim 9
Independent Claim
85 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein the method includes monitoring backscattering of the ions to align the crystal relative to a source of light-ions.
Claim 10
Independent Claim
92 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein the method includes aligning the crystal relative to a source of light-ions by reflecting a laser beam that is substantially parallel to a channeling direction.
Claim 11
Independent Claim
92 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein the method includes aligning the crystal relative to a source of light-ions by reflecting a laser beam that is substantially parallel to a channeling direction.
Claim 12
Dependent Claim
31 words
The method of claim 1 , further comprising aligning the crystal relative to a source of light-ions along a major crystallographic direction in the source crystal to minimize roughening during implantation.
Claim 13
Dependent Claim
11 words
A thin-film transferred according to the method of claim 1 .
Claim 14
Independent Claim
85 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions at an elevated temperature of at least approximately 200° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein implanting includes implanting the source crystal with ions along a crystallographic channel of the source crystal.
Claim 15
Independent Claim
85 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions at an elevated temperature of at least approximately 200° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region, wherein implanting includes implanting the source crystal with ions along a crystallographic channel of the source crystal.
Claim 16
Dependent Claim
39 words
The method of claim 11 , wherein the source crystal includes at least one member selected from the group consisting of SiC, Si, Ge, SiGe alloys diamond, GaN, GaAs, AlN, SrTiO 3 , and Al 2 O 3 .
Claim 17
Dependent Claim
12 words
The method of claim 11 , wherein the ions include hydrogen ions.
Claim 18
Dependent Claim
22 words
The method of claim 11 , wherein the crystallographic channel is substantially parallel to a major crystal direction of the source crystal.
Claim 19
Dependent Claim
39 words
The method of claim 14 , wherein the source crystal composes a hexagonal crystal and the major crystal direction is selected from the group consisting of [1 0 0 0], [1 2 1 0], and [1 0 1 0].
Claim 20
Dependent Claim
16 words
The method of claim 11 , further comprising polishing an exposed surface of the source crystal.
Claim 21
Dependent Claim
11 words
A thin-film transferred according to the method of claim 11 .
Claim 22
Independent Claim
76 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal and at a temperature of at least approximately 300° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the single crystal along the strained region.
Claim 23
Independent Claim
76 words
A method for transfer of a thin-film, comprising: implanting a source crystal with ions along a crystallographic channel of the source crystal and at a temperature of at least approximately 300° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the single crystal along the strained region.
Claim 24
Dependent Claim
11 words
A thin-film transferred according to the method of claim 18 .
Claim 25
Dependent Claim
22 words
The method of claim 18 , wherein the crystallographic channel is substantially parallel to a major crystal direction of the source crystal.
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