US5863830A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of a structure having a thin semiconductor film on a substrate
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1995-09-18
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Granted: 1999-01-26
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Expires: 2015-09-18
Abstract
Abstract A process for the production of a structure having a thin semiconductor film (2) adhering to a target substrate (24). The process which is applicable to the production of electronic components comprises the steps of a) producing a first structure having a thin semiconductor film (2) on a first substrate, and b) transferring of the thin film (2) from the first substrate to the target substrate.
Inventors
- 👤 Michel Bruel
- 👤 Thierry Poumeyrol
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:58
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10P54/00; H10P54/50; H10P54/52; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
256 words
A process for the production of a structure having a semiconductor thin film (4) adhering to a target substrate (24), comprising the following steps: a) producing a first structure having a thin semiconductor film on a first substrate (2) to form a thin film-first substrate assembly, the thin film having a first free face (10) called the front face and a second face (8) called the rear face bonded to the first substrate by a first bonding energy E 0 , and b) transferring the thin film (4) from the first substrate (2) to the target substrate (24), said transfer involving both a tearing of the thin film (4) from the first substrate (2) by application to the thin film-first substrate assembly tearing away forces able to overcome the first bonding energy and adhesive contacting of the thin film (4) with the target substrate (24), said transferring being accomplished by b 1 ) the adhesive contacting of a manipulator (12) with the first face (10) of the thin film (4), the adhesive contact being established with a second bonding energy E 1 exceeding the first bonding energy, b 2 ) separating of the thin film (4) and the first substrate (2) by tearing away the thin film (4) level with the second face (8) and the first substrate, and b 3 ) adhesive contacting of the second face of the thin film (4) with the target substrate (24) with a third bonding energy E 2 and separating of the thin film (4) from the manipulator (12).
Claim 2
Dependent Claim
256 words
A process for the production of a structure having a semiconductor thin film (4) adhering to a target substrate (24), comprising the following steps: a) producing a first structure having a thin semiconductor film on a first substrate (2) to form a thin film-first substrate assembly, the thin film having a first free face (10) called the front face and a second face (8) called the rear face bonded to the first substrate by a first bonding energy E 0 , and b) transferring the thin film (4) from the first substrate (2) to the target substrate (24), said transfer involving both a tearing of the thin film (4) from the first substrate (2) by application to the thin film-first substrate assembly tearing away forces able to overcome the first bonding energy and adhesive contacting of the thin film (4) with the target substrate (24), said transferring being accomplished by b 1 ) the adhesive contacting of a manipulator (12) with the first face (10) of the thin film (4), the adhesive contact being established with a second bonding energy E 1 exceeding the first bonding energy, b 2 ) separating of the thin film (4) and the first substrate (2) by tearing away the thin film (4) level with the second face (8) and the first substrate, and b 3 ) adhesive contacting of the second face of the thin film (4) with the target substrate (24) with a third bonding energy E 2 and separating of the thin film (4) from the manipulator (12).
Claim 3
Dependent Claim
23 words
The process according to claim 1, characterized in that the third bonding energy E 2 exceeds the second bonding energy E 1 .
Claim 4
Dependent Claim
27 words
The process according to claim 1, characterized in that the first substrate (2) has an expansion coefficient substantially identical to the expansion coefficient of the thin film.
Claim 5
Dependent Claim
25 words
The process according to any one of the claims 1 and 3, characterized in that the tearing away forces comprise a tensile and/or shear force.
Claim 6
Dependent Claim
109 words
The process according to claim 1, characterized in that the thin film on the first substrate is obtained by: an implantation of ions of rare gas or hydrogen in a supplementary substrate through its surface so as to generate a layer of gaseous microbubbles extending substantially in accordance with a plane defining in the supplementary substrate a surface thin film, the adhesive contacting of the thin film and the first substrate with the first bonding energy, and a heat treatment, which by a crystalline rearrangement effect and by a pressure effect in the gaseous microbubbles brings about a cleaving separating the film from the remainder of the supplementary substrate.
Claim 7
Dependent Claim
39 words
The process according to claim 1, characterized in that during step b 3 ), the separation of the thin film (4) and the manipulator takes place after the adhesive contacting of the film (4) with the target substrate (24).
Claim 8
Dependent Claim
40 words
The process according to claim 1, characterized in that during step b 3 ), the separation of the thin film (4) and the manipulator takes place prior to the adhesive contacting of the film (4) and the target substrate (24).
Claim 9
Dependent Claim
37 words
The process according to claim 7, characterized in that during step b 3 ), the manipulator and thin film are immersed in a chemical bath to dissolve the manipulator, the film being collected on the target substrate.
Claim 10
Dependent Claim
32 words
The process according to claim 7, characterized in that during step b 3 ), the thin film (4) is adhesively contacted with the target substrate (24) by its first or second face.
Claim 11
Dependent Claim
55 words
The process according to claim 1, characterized in that during step b 1 ), the adhesive contacting between the manipulator (12) and the thin film (4) is brought about by electrostatic forces and during step b 3 ), the separation of the film (4) and the manipulator (12) is obtained by eliminating said electrostatic forces.
Claim 12
Dependent Claim
29 words
The process according to claim 1, characterized in that the adhesive contact is obtained by a heat and/or pressure and/or chemical preparation treatment of the surfaces to be contacted.
Claim 13
Dependent Claim
25 words
The process according to claim 1, characterized in that the adhesive contact between the thin film and the manipulator is brought about with an adhesive.
Claim 14
Dependent Claim
31 words
The process according to claim 1, characterized in that the target substrate has a contacting surface above the surface of one of the first and second faces of the thin film.
Claim 15
Dependent Claim
19 words
The process according to claim 1, characterized in that the thin film (4) is a monocrystalline, semiconductor material film.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-25 | 2002-07-27 | 2003-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-25 | 2006-07-27 | 2007-01-26 | $3760.00 | Window Closed / Lapsed |
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