US6882025B2
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Strained-channel transistor and methods of manufacture
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 2003-04-25
•
Granted: 2005-04-19
•
Expires: 2023-04-25
Abstract
Abstract A semiconductor device includes a region of semiconductor material with first and second isolation trenches formed therein. The first isolation trench is lined with a first material having a low oxygen diffusion rate and is filled with an insulating material. The second isolation trench is not lined with the first material but is filled with an insulating material. A first transistor is formed adjacent the first isolation region and a second transistor formed adjacent the second isolation region.
Inventors
- 👤 Yee-Chia Yeo
- 👤 Chih-Hsin Ko
- 👤 Wen-Chin Lee
- 👤 Chenming Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:40
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/791; H10D30/795; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0148; H10W10/061; H10W10/10; H10W10/17; H10W10/181
Claims Analysis
Total Claims: 71
Claim 1
Independent Claim
104 words
A semiconductor device comprising: a region of semiconductor material; a first isolation trench formed in the region of semiconductor material, the first isolation trench being lined with a first material, the first material being material having a low oxygen diffusion rate, the first isolation trench further being filled with an insulating material; a second isolation trench formed in the region of semiconductor material, the second isolation trench not being lined with the first material, the second isolation trench further being filled with an insulating material; a first transistor formed adjacent the first isolation region; and a second transistor formed adjacent the second isolation region.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising: a region of semiconductor material; a first isolation trench formed in the region of semiconductor material, the first isolation trench being lined with a first material, the first material being material having a low oxygen diffusion rate, the first isolation trench further being filled with an insulating material; a second isolation trench formed in the region of semiconductor material, the second isolation trench not being lined with the first material, the second isolation trench further being filled with an insulating material; a first transistor formed adjacent the first isolation region; and a second transistor formed adjacent the second isolation region.
Claim 3
Dependent Claim
25 words
The device of claim 1 wherein the second isolation trench is lined with a second material, the second material being different than the first material.
Claim 4
Dependent Claim
29 words
The device of claim 1 wherein the second isolation trench is filled with the insulating material without any liner of a material different than that of the insulating material.
Claim 5
Dependent Claim
35 words
The device of claim 1 wherein the first transistor comprises a transistor of a first conductivity type and the second transistor comprises a transistor of a second conductivity type different than the first conductivity type.
Claim 6
Dependent Claim
19 words
The device of claim 4 wherein the first conductivity type comprises n-type and the second conductivity type comprises p-type.
Claim 7
Dependent Claim
16 words
The device of claim 1 wherein the first isolation trench is lined with a nitride liner.
Claim 8
Dependent Claim
17 words
The device of claim 6 wherein the second isolation trench is lined with an implanted nitride liner.
Claim 9
Dependent Claim
15 words
The device of claim 6 wherein second isolation trench is lined with an oxide liner.
Claim 10
Dependent Claim
17 words
The device of claim 1 wherein the first isolation trench is lined with a nitrided oxide liner.
Claim 11
Dependent Claim
16 words
The device of claim 9 wherein the second isolation trench is lined with an oxide liner.
Claim 12
Dependent Claim
118 words
A semiconductor device comprising: a region of semiconductor material; a first active area disposed in a first portion of the semiconductor material: a first isolation region disposed adjacent the first active area, the first isolation region imposing a first type of strain on the first active area: a second active area disposed in a second portion of the semiconductor material: a second isolation region disposed adjacent the second active area, wherein the second isolation region does not impose the first type of strain on the second active area an n-channel transistor formed in the first active region and a p-channel transistor formed in the second active region; and a tensile stress-inducing, silicon nitride film overlying the n-channel transistor.
Claim 13
Dependent Claim
118 words
A semiconductor device comprising: a region of semiconductor material; a first active area disposed in a first portion of the semiconductor material: a first isolation region disposed adjacent the first active area, the first isolation region imposing a first type of strain on the first active area: a second active area disposed in a second portion of the semiconductor material: a second isolation region disposed adjacent the second active area, wherein the second isolation region does not impose the first type of strain on the second active area an n-channel transistor formed in the first active region and a p-channel transistor formed in the second active region; and a tensile stress-inducing, silicon nitride film overlying the n-channel transistor.
Claim 14
Dependent Claim
21 words
The device of claim 11 wherein the second isolation region imposes a second type of stress on the second active area.
Claim 15
Dependent Claim
27 words
The device of claim 12 wherein the first type of strain comprises an in-plane tensile strain and the second type of strain comprises an in-plane compressive strain.
Claim 16
Dependent Claim
20 words
The device of claim 13 wherein the in-plane tensile strain has a magnitude of between about 0.1% and about 2%.
Claim 17
Dependent Claim
20 words
The device of claim 14 wherein the in-plane compressive strain has a magnitude of between about 0.1% and about 2%.
Claim 18
Dependent Claim
15 words
The device of claim 11 wherein the second type of strain comprises substantially no strain.
Claim 19
Dependent Claim
15 words
The device of claim 11 wherein the first isolation region includes an oxygen resistant liner.
Claim 20
Dependent Claim
14 words
The device of claim 17 wherein the first isolation region includes a nitride liner.
Claim 21
Dependent Claim
16 words
The device of claim 18 wherein the second isolation region does not include a nitride liner.
Claim 22
Dependent Claim
21 words
The device of claim 17 wherein the second isolation region includes a nitride liner that has been implanted with selected ions.
Claim 23
Dependent Claim
15 words
The device of claim 17 wherein the first isolation region includes a nitrided oxide liner.
Claim 24
Dependent Claim
35 words
The device of claim 11 wherein the first isolation region comprises an oxide liner underlying a silicon nitride liner and wherein the second isolation region comprises an oxide liner underlying an implanted silicon nitride liner.
Claim 25
Dependent Claim
18 words
The device of claim 11 wherein the first and second isolation regions further include a trench filling material.
Claim 26
Dependent Claim
13 words
The device of claim 23 wherein the trench filling material comprises silicon oxide.
Claim 27
Dependent Claim
16 words
The device of claim 24 wherein the trench filling material comprises silicon oxide and poly-crystalline silicon.
Claim 28
Dependent Claim
19 words
The device of claim 11 wherein the region of semiconductor material comprises an upper portion of a silicon substrate.
Claim 29
Dependent Claim
20 words
The device of claim 11 wherein the region of semiconductor material comprises a silicon layer overlying a silicon germanium layer.
Claim 30
Dependent Claim
27 words
The device of claim 11 wherein the region of semiconductor material comprises a silicon layer overlying an insulating layer such that the device comprises a silicon-on-insulator device.
Claim 31
Dependent Claim
17 words
The device of claim 11 wherein the first and second isolation regions comprise shallow trench isolation regions.
Claim 32
Dependent Claim
16 words
The structure of claim 11 wherein the first type of strain comprises an in-plane tensile strain.
Claim 33
Dependent Claim
20 words
The structure of claim 30 wherein the in-plane tensile strain has a magnitude of between about 0.1% and about 2%.
Claim 34
Dependent Claim
100 words
A semiconductor structure comprising: a semiconductor substrate; a first active region disposed in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, each of the first isolation regions including a silicon nitride liner; a second active region disposed in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, each of the second isolation regions including a silicon nitride liner, the silicon nitride liner of each of the second isolation regions having a characteristic that has been altered by an implantation.
Claim 35
Dependent Claim
100 words
A semiconductor structure comprising: a semiconductor substrate; a first active region disposed in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, each of the first isolation regions including a silicon nitride liner; a second active region disposed in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, each of the second isolation regions including a silicon nitride liner, the silicon nitride liner of each of the second isolation regions having a characteristic that has been altered by an implantation.
Claim 36
Dependent Claim
31 words
The structure of claim 32 and further comprising at least one n-channel transistor formed in the first active region and at least one p-channel transistors formed in the second active region.
Claim 37
Dependent Claim
36 words
The structure of claim 32 wherein the first isolation region further comprises an oxide liner underlying the silicon nitride liner and the second isolation region further comprises an oxide liner underlying the implanted silicon nitride liner.
Claim 38
Dependent Claim
18 words
The structure of claim 32 wherein the first and second isolation regions further comprise a trench filling material.
Claim 39
Dependent Claim
13 words
The structure of claim 35 wherein the trench filling material comprises silicon oxide.
Claim 40
Dependent Claim
16 words
The structure of claim 36 wherein the trench filling material comprises silicon oxide and poly-crystalline silicon.
Claim 41
Dependent Claim
25 words
The structure of claim 32 wherein the first active region experiences an in-plane tensile strain and the second active region experiences an in-plane compressive strain.
Claim 42
Dependent Claim
20 words
The structure of claim 38 wherein the in-plane tensile strain has a magnitude of between about 0.1% and about 2%.
Claim 43
Dependent Claim
20 words
The structure of claim 38 wherein the in-plane compressive strain has a magnitude of between about 0.1% and about 2%.
Claim 44
Dependent Claim
13 words
The structure of claim 32 wherein the semiconductor substrate comprises an elemental semiconductor.
Claim 45
Dependent Claim
13 words
The structure of claim 41 wherein the semiconductor substrate is a silicon substrate.
Claim 46
Dependent Claim
18 words
The structure of claim 32 wherein the semiconductor substrate comprises a silicon layer overlying a silicon germanium layer.
Claim 47
Dependent Claim
12 words
The structure of claim 32 wherein the semiconductor substrate comprises a silicon-on-insulator.
Claim 48
Dependent Claim
14 words
The structure of claim 32 wherein the isolation regions are shallow trench isolation regions.
Claim 49
Dependent Claim
45 words
The structure of claim 32 wherein the silicon nitride liner of each of the second isolation regions has been altered such that an oxygen diffusion rate is faster than an oxygen diffusion rate of the silicon nitride liner of each of the first isolation regions.
Claim 50
Dependent Claim
47 words
The structure of claim 32 wherein the silicon nitride liner of each of the second isolation regions has been altered such that an intrinsic stress of the liner is reduced relative to an intrinsic stress of the silicon nitride liner of each of the first isolation regions.
Claim 51
Dependent Claim
13 words
The structure of claim 32 wherein the semiconductor substrate comprises an alloy semiconductor.
Claim 52
Dependent Claim
13 words
The structure of claim 32 wherein the semiconductor substrate comprises a compound semiconductor.
Claim 53
Dependent Claim
113 words
A semiconductor structure comprising: a semiconductor substrate; a first active region disposed in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, each of the first isolation regions including a silicon nitride liner; a second active region disposed in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, each of the second isolation regions including an implanted silicon nitride liner; at least one n-channel transistor formed in the first active region; at least one p-channel transistors formed in the second active region; and a tensile stress silicon nitride film overlying the n-channel transistor.
Claim 54
Dependent Claim
113 words
A semiconductor structure comprising: a semiconductor substrate; a first active region disposed in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, each of the first isolation regions including a silicon nitride liner; a second active region disposed in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, each of the second isolation regions including an implanted silicon nitride liner; at least one n-channel transistor formed in the first active region; at least one p-channel transistors formed in the second active region; and a tensile stress silicon nitride film overlying the n-channel transistor.
Claim 55
Dependent Claim
89 words
A semiconductor structure comprising: a semiconductor substrate; a first active region with an in-plane tensile strain in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, wherein each of the first isolation regions include a silicon nitride liner; a second active region with an in-plane compressive strain in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, wherein the second isolation regions do not include a silicon nitride liner.
Claim 56
Dependent Claim
89 words
A semiconductor structure comprising: a semiconductor substrate; a first active region with an in-plane tensile strain in a first portion of the semiconductor substrate, the first active region located between a pair of first isolation regions, wherein each of the first isolation regions include a silicon nitride liner; a second active region with an in-plane compressive strain in a second portion of the semiconductor substrate, the second active region located between a pair of second isolation regions, wherein the second isolation regions do not include a silicon nitride liner.
Claim 57
Dependent Claim
25 words
The structure of claim 51 , further comprising n-channel transistors formed in the first active region and p-channel transistors formed in the second active region.
Claim 58
Dependent Claim
18 words
The structure of claim 52 , further comprising a tensile stress silicon nitride film overlying the n-channel transistor.
Claim 59
Dependent Claim
22 words
The structure of claim 51 , wherein the first isolation region further comprises of an oxide liner underlying the silicon nitride liner.
Claim 60
Dependent Claim
19 words
The structure of claim 51 , wherein the first and second isolation regions further include a trench filling material.
Claim 61
Dependent Claim
13 words
The structure of claim 55 wherein the trench filling material comprises silicon oxide.
Claim 62
Dependent Claim
16 words
The structure of claim 56 wherein the trench filling material comprises silicon oxide and poly-crystalline silicon.
Claim 63
Dependent Claim
20 words
The structure of claim 51 wherein the in-plane compressive strain has a magnitude of between about 0.1% and about 2%.
Claim 64
Dependent Claim
20 words
The structure of claim 51 wherein the in-plane tensile strain has a magnitude of between about 0.1% and about 2%.
Claim 65
Dependent Claim
13 words
The structure of claim 47 wherein the semiconductor substrate comprises an elemental semiconductor.
Claim 66
Dependent Claim
13 words
The structure of claim 56 wherein the semiconductor substrate is a silicon substrate.
Claim 67
Dependent Claim
18 words
The structure of claim 51 wherein the semiconductor substrate comprises a silicon layer overlying a silicon germanium layer.
Claim 68
Dependent Claim
13 words
The structure of claim 51 wherein the semiconductor substrate is a silicon-on-insulator substrate.
Claim 69
Dependent Claim
24 words
The structure of claim 51 wherein the isolation regions are shallow trench isolation regions with a depth of about 200 to about 6000 angstroms.
Claim 70
Dependent Claim
13 words
The structure of claim 51 wherein the semiconductor substrate comprises an alloy semiconductor.
Claim 71
Dependent Claim
13 words
The structure of claim 51 wherein the semiconductor substrate comprises a compound semiconductor.
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