Patent US6777141B2 successfully refreshed from Google Patents.
US6777141B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase shift mask including sub-resolution assist features for isolated spaces
Assignee: Synopsys Inc
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Filing: 2002-09-16
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Granted: 2004-08-17
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Expires: 2022-09-16
Abstract
Abstract A method extends the use of phase shift techniques to complex layouts, and includes identifying a pattern, and automatically mapping the phase shifting regions for implementation of such features. The pattern includes small features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a narrow space. Phase shift regions are laid out including a first set of phase shift regions to define said small features, and a second set of phase shift regions to assist definition of said side of said relatively large feature. An opaque feature is used to define the relatively large feature, and a phase shift region in the second set is a sub-resolution window inside the perimeter of the opaque feature.
Inventors
- 👤 Christophe Pierrat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:37
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30; G03F1/36
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
138 words
A method, comprising: identifying a pattern for a layer to be formed using a photolithographic mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; and laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 2
Independent Claim
138 words
A method, comprising: identifying a pattern for a layer to be formed using a photolithographic mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; and laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 3
Dependent Claim
49 words
The method of claim 1 , including: laying out a complementary mask including one or more opaque features preventing exposure of said features having a dimension smaller than the first particular feature size, and at least one opaque feature used to define said at least one relatively large feature.
Claim 4
Dependent Claim
59 words
The method of claim 1 , wherein said at least one relatively large feature has a perimeter including one of said respective sides, and the second set of phase shift regions includes a first phase shift region inside the perimeter of said at least one relatively large feature, and wherein said first phase shift region comprises a sub-resolution region.
Claim 5
Dependent Claim
74 words
The method of claim 1 , wherein said at least one relatively large feature and said other feature have perimeters including said respective sides, and the second set of phase shift regions includes a first phase shift region inside the perimeter of said at least one relatively large feature, and a second phase shift region inside the perimeter of said other feature, and wherein said first and second phase shift regions comprise sub-resolution regions.
Claim 6
Dependent Claim
90 words
The method of claim 1 , wherein said at least one relatively large feature and said other feature have perimeters including said respective sides, and the second set of phase shift regions includes a first phase shift region inside the perimeter of said at least one relatively large feature, a second phase shift region inside the perimeter of said other feature, and a third phase shift region having a different phase than said first phase between said respective sides, and wherein said first and second shift regions comprise sub-resolution regions.
Claim 7
Dependent Claim
22 words
The method of claim 5 , wherein said different phase is about 180 degrees out of phase relative to said first phase.
Claim 8
Dependent Claim
65 words
The method of claim 1 , wherein said at least one relatively large feature intersects with one of said features having a dimension less than a first particular feature size, and wherein a phase shift region having a first phase in said first set of phase shift regions intersects with a phase shift region in said space in said second set of phase shift regions.
Claim 9
Dependent Claim
129 words
The method of claim 1 , wherein said at least one relatively large feature has a perimeter including one of said respective sides, and wherein said perimeter of said at least one relatively large feature intersects with one of said features having a dimension less than a first particular feature size, and wherein a phase shift region having a first phase in said first set of phase shift regions intersects with a phase shift region in said space in said second set of phase shift regions, and a phase shift region having a different phase in said first set of phase shift regions intersects with a sub-resolution phase shift region in said second set of phase shift regions inside said perimeter of said at least one relatively large feature.
Claim 10
Dependent Claim
46 words
The method of claim 1 , wherein the pattern includes one or more features having a feature size equal to a critical dimension, and wherein said critical dimension is smaller than at least one of said first particular feature size and said second particular feature size.
Claim 11
Dependent Claim
26 words
The method of claim 1 , wherein said identifying features includes reading a layout file which identifies features of the pattern, and processing the layout file.
Claim 12
Dependent Claim
71 words
The method of claim 1 , wherein said phase shift mask includes an opaque field, and said phase shift regions in said first and second sets of phase shift regions include a plurality of transparent regions having a first phase within said opaque field, and a plurality of complementary transparent regions having a different phase approximately 180 degrees out of phase with respect to the first phase, within said opaque field.
Claim 13
Dependent Claim
14 words
The method of claim 2 , wherein said complementary mask comprises a binary mask.
Claim 14
Dependent Claim
21 words
The method of claim 1 , including producing a machine readable layout file defining the layout of the phase shift mask.
Claim 15
Dependent Claim
12 words
The method of claim 13 , including producing the phase shift mask.
Claim 16
Dependent Claim
16 words
The method of claim 14 , including producing an integrated circuit using the phase shift mask.
Claim 17
Dependent Claim
171 words
A data processing system, comprising: a processor; a machine readable data storage medium coupled to the processor, having stored thereon instructions executable by the processor defining steps for laying out a photolithographic mask that defines a pattern for a layer to be formed using a photolithographic mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the steps comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 18
Dependent Claim
171 words
A data processing system, comprising: a processor; a machine readable data storage medium coupled to the processor, having stored thereon instructions executable by the processor defining steps for laying out a photolithographic mask that defines a pattern for a layer to be formed using a photolithographic mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the steps comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 19
Dependent Claim
53 words
The data processing system of claim 16 , the steps including: laying out a complementary mask including one or more opaque features preventing exposure of said features having a dimension smaller than the first particular feature size, and at least one opaque feature used to define said at least one relatively large feature.
Claim 20
Dependent Claim
166 words
An article of manufacture, comprising: a machine readable data storage medium, having stored thereon instructions executable by a data processing system defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the steps comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 21
Dependent Claim
166 words
An article of manufacture, comprising: a machine readable data storage medium, having stored thereon instructions executable by a data processing system defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the steps comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature.
Claim 22
Dependent Claim
51 words
The article of claim 18 , the steps including: laying out a complementary mask including one or more opaque features preventing exposure of said features having a dimension smaller than the first particular feature size, and at least one opaque feature used to define said at least one relatively large feature.
Claim 23
Independent Claim
158 words
A method for manufacturing a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the method comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature; and forming said phase shift pattern on a portion of mask substrate material.
Claim 24
Independent Claim
158 words
A method for manufacturing a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein the pattern including features having a dimension smaller than a first particular feature size, and at least one relatively large feature, the at least one relatively large feature and another feature in the pattern having respective sides separated by a space between said respective sides, said space having a dimension less than a second particular feature size; the method comprising: laying out phase shift regions for the identified pattern to produce a phase shift mask, the phase shift mask having a first set of phase shift regions to define said features having a dimension smaller than the first particular feature size, and a second set of phase shift regions to assist definition of said respective side of said at least one relatively large feature; and forming said phase shift pattern on a portion of mask substrate material.
Claim 25
Dependent Claim
51 words
The method of claim 20 , the steps including: laying out a complementary mask including one or more opaque features preventing exposure of said features having a dimension smaller than the first particular feature size, and at least one opaque feature used to define said at least one relatively large feature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-08-17 | 2008-02-16 | 2008-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-08-17 | 2012-02-16 | 2012-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-08-17 | 2016-02-16 | 2016-08-17 | $7700.00 | Window Closed / Lapsed |