US5998068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reticle and pattern formation method
Assignee: Panasonic Holdings Corp
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Filing: 1998-01-27
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Granted: 1999-12-07
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Expires: 2018-01-27
Abstract
Abstract A reticle has a phase-shifting pattern region, a normal pattern (chrome pattern) region, and a shielding region. The phase-shifting pattern region has first and second apertures and mask portions located therebetween. The first apertures transmit light opposite in phase to light transmitted by the second apertures. The normal pattern region has apertures and mask portions. The semiconductor chip regions of a resist film formed on a wafer are exposed stepwise through the phase-shifting pattern region. Subsequently, the portions of the semiconductor chip regions exposed through the phase-shifting pattern region are exposed through the normal pattern region.
Inventors
- 👤 Koji Matsuoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70466; G03F1/00; G03F1/26; G03F1/30; G03F1/50; G03F7/20; G03F7/2022; G03F7/203
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
214 words
A pattern formation method by using a reticle comprising: a first pattern region formed in a region of a reticle substrate, said first pattern region having a first aperture for transmitting light, a second aperture for transmitting light shifted in phase by 180° from the light transmitted by said first aperture, and a first mask portion formed between said first and second apertures and preventing the transmission of light; and a second pattern region formed in a different region of said reticle substrate from said region where said first pattern region is formed, said second pattern region having a third aperture for transmitting light and a second mask portion preventing the transmission of light, said pattern formation method comprising: a first exposure step of exposing stepwise the positive resist film formed on a wafer through one of said first and second pattern regions of said reticle: a second exposure step of exposing stepwise, through the other of said first and second pattern regions of said reticle, a portion of said resist film exposed through one of said first and second pattern regions, and a resist pattern formation step of forming an island resist pattern in a portion of said resist film where said first mask portion and said second mask portion overlap each other.
Claim 2
Dependent Claim
214 words
A pattern formation method by using a reticle comprising: a first pattern region formed in a region of a reticle substrate, said first pattern region having a first aperture for transmitting light, a second aperture for transmitting light shifted in phase by 180° from the light transmitted by said first aperture, and a first mask portion formed between said first and second apertures and preventing the transmission of light; and a second pattern region formed in a different region of said reticle substrate from said region where said first pattern region is formed, said second pattern region having a third aperture for transmitting light and a second mask portion preventing the transmission of light, said pattern formation method comprising: a first exposure step of exposing stepwise the positive resist film formed on a wafer through one of said first and second pattern regions of said reticle: a second exposure step of exposing stepwise, through the other of said first and second pattern regions of said reticle, a portion of said resist film exposed through one of said first and second pattern regions, and a resist pattern formation step of forming an island resist pattern in a portion of said resist film where said first mask portion and said second mask portion overlap each other.
Claim 3
Dependent Claim
34 words
The pattern formation method according to claim 1, wherein each of said first and second mask portions is shaped like a belt, said belt-shaped first and second mask portions extending in the same direction.
Claim 4
Dependent Claim
24 words
The pattern formation method according to claim 1, wherein said reticle substrate includes a light shielding region between said first and second pattern regions.
Claim 5
Dependent Claim
238 words
A pattern formation method by using a reticle comprising: a first pattern region formed in a region of a reticle substrate, said first pattern region having a first aperture for transmitting light, a second aperture for transmitting light shifted in phase by 180° from the light transmitted by said first aperture, and a first mask portion formed between said first and second apertures and preventing the transmission of light; and a second pattern region formed in a different region of said reticle substrate from said region where said first pattern region is formed, said second pattern region having a third aperture for transmitting light and a second mask portion preventing the transmission of light, said pattern formation method comprising: a first exposure step of exposing the positive resist film formed on a wafer simultaneously through said first and second pattern regions of said reticle; a second exposure step of exposing, through said second pattern region of said reticle, a portion of said resist film exposed through said first pattern region in said first exposure step: a third exposure step of exposing, through said first pattern region of said reticle, a portion of said resist film exposed through said second pattern region in said first exposure step; and a resist pattern formation step of forming an island resist pattern in a portion of said resist film where said first mask portion and said second mask portion overlap each other.
Claim 6
Dependent Claim
238 words
A pattern formation method by using a reticle comprising: a first pattern region formed in a region of a reticle substrate, said first pattern region having a first aperture for transmitting light, a second aperture for transmitting light shifted in phase by 180° from the light transmitted by said first aperture, and a first mask portion formed between said first and second apertures and preventing the transmission of light; and a second pattern region formed in a different region of said reticle substrate from said region where said first pattern region is formed, said second pattern region having a third aperture for transmitting light and a second mask portion preventing the transmission of light, said pattern formation method comprising: a first exposure step of exposing the positive resist film formed on a wafer simultaneously through said first and second pattern regions of said reticle; a second exposure step of exposing, through said second pattern region of said reticle, a portion of said resist film exposed through said first pattern region in said first exposure step: a third exposure step of exposing, through said first pattern region of said reticle, a portion of said resist film exposed through said second pattern region in said first exposure step; and a resist pattern formation step of forming an island resist pattern in a portion of said resist film where said first mask portion and said second mask portion overlap each other.
Claim 7
Dependent Claim
39 words
The pattern formation method according to claim 4, wherein after said first exposure step is performed once, said first exposure step is performed a plurality of times simultaneously with either said second exposure step or said third exposure step.
Claim 8
Dependent Claim
102 words
The pattern formation method according to claim 4, wherein after said first exposure step is performed a plurality of times by moving a stage mounting said wafer thereon by a first predetermined distance per step, said second and third exposure steps are performed once, simultaneously with each other, by moving said stage by a second predetermined distance per step, said second predetermined distance being equal to a half of said first predetermined distance, and thereafter, said second and third exposure steps are performed a plurality of times, simultaneously with each other, by moving said stage by said first predetermined distance per step.
References Cited (Backward Citations)
US5578421A
Cited
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