US6690075B2
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Semiconductor device with channel having plural impurity regions
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2001-06-04
•
Granted: 2004-02-10
•
Expires: 2021-06-04
Abstract
Abstract In a CMOS circuit, impurity regions are formed in the channel forming region of each of an n-channel and p-channel transistors alone the channel direction. The intervals between the impurity regions in the n-channel transistor is set narrower than those between the impurity regions in the p-channel transistor so as to make the absolute values of the threshold voltages of the n-channel and p-channel transistors approximately equal to each other. Where active layers are formed by utilizing a crystal structural body that is a collection of needle-like or columnar crystals, the same effect can be attained by controlling the width of the needle-like or columnar crystals.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D62/00; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D86/00; H10D86/40; H10D86/421; H10D86/425; H10D86/427; H10D86/60
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, and wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising silicon and oxygen interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, and wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising silicon and oxygen interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 3
Dependent Claim
16 words
The semiconductor device according to claim 1 , wherein the semiconductor film comprises single crystal silicon.
Claim 4
Dependent Claim
32 words
The semiconductor device according to claim 1 , wherein a low-concentration impurity region is formed between one of the channel forming regions at least one of the source region and drain region.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 1 , wherein the semiconductor device is used in an EL display device.
Claim 6
Dependent Claim
25 words
The semiconductor device according to claim 1 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 7
Dependent Claim
44 words
An electronic device comprising the semiconductor device according to claim 1 , wherein the electronic device is selected from the group consisting of a TV camera, a head-mounted display, a car navigation apparatus, a cellular telephone, a video camera, and a front projection apparatus.
Claim 8
Dependent Claim
95 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, wherein each one the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising oxide interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 9
Dependent Claim
95 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, wherein each one the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising oxide interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 10
Dependent Claim
16 words
The semiconductor device according to claim 7 , wherein the semiconductor film comprises single crystal silicon.
Claim 11
Dependent Claim
33 words
The semiconductor device according to claim 7 , wherein a low-concentration impurity region is formed between one of the channel forming region and at least one of the source region and drain region.
Claim 12
Dependent Claim
19 words
The semiconductor device according to claim 7 , wherein the semiconductor device is used in an EL display device.
Claim 13
Dependent Claim
25 words
The semiconductor device according to claim 7 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 14
Dependent Claim
44 words
An electronic device comprising the semiconductor device according to claim 7 , wherein the electronic device is selected from the grout consisting of a TV camera, a head-mounted display, a car navigation apparatus, a cellular telephone, a video camera, and a front projection apparatus.
Claim 15
Dependent Claim
109 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising at least one element selected from the group consisting of oxygen, carbon and nitrogen, interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 16
Dependent Claim
109 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising at least one element selected from the group consisting of oxygen, carbon and nitrogen, interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 17
Dependent Claim
16 words
The semiconductor device according to claim 13 , wherein the semiconductor film comprises single crystal silicon.
Claim 18
Dependent Claim
33 words
The semiconductor device according to claim 13 , wherein a low-concentration impurity region is formed between one of the channel forming regions and at least one of the source region and drain region.
Claim 19
Dependent Claim
19 words
The semiconductor device according to claim 13 , wherein the semiconductor device is used in an EL display device.
Claim 20
Dependent Claim
25 words
The semiconductor device according to claim 13 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 21
Dependent Claim
44 words
An electronic device comprising the semiconductor device according to claim 13 , wherein the electronic device is selected from the group consisting of a TV camera, a head-mounted display, a car navigation apparatus, a cellular telephone, a video camera, and a front projection apparatus.
Claim 22
Dependent Claim
126 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising silicon and oxygen interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 23
Dependent Claim
126 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising silicon and oxygen interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 24
Dependent Claim
16 words
The semiconductor device according to claim 19 , wherein the semiconductor film comprises single crystal silicon.
Claim 25
Dependent Claim
33 words
The semiconductor device according to claim 19 , wherein a low-concentration impurity region is formed between one of the channel forming regions and at least one of the source region and drain region.
Claim 26
Dependent Claim
19 words
The semiconductor device according to claim 19 , wherein the semiconductor device is used in an EL display device.
Claim 27
Dependent Claim
25 words
The semiconductor device according to claim 19 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 28
Dependent Claim
43 words
An electronic device comprising the semiconductor device according to claim 19 , wherein the electronic device is selected from the group consisting of a TV camera, a head-mounted display, car navigation apparatus, a cellular telephone, a video camera, and a front projection apparatus.
Claim 29
Dependent Claim
124 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising oxide interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 30
Dependent Claim
124 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising oxide interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 31
Dependent Claim
16 words
The semiconductor device according to claim 25 , wherein the semiconductor film comprises single crystal silicon.
Claim 32
Dependent Claim
33 words
The semiconductor device according to claim 25 , wherein a low-concentration impurity region is formed between one of the channel forming regions and at least one of the source region and drain region.
Claim 33
Dependent Claim
33 words
The semiconductor device according to claim 25 , wherein a low-concentration impurity region is formed between one of the channel forming regions and at least one of the source region and drain region.
Claim 34
Dependent Claim
19 words
The semiconductor device according to claim 25 , wherein the semiconductor device is used in an EL display device.
Claim 35
Dependent Claim
25 words
The semiconductor device according to claim 25 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 36
Dependent Claim
137 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising at least one element selected from the group consisting of oxygen, carbon and nitrogen, interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 37
Dependent Claim
137 words
A semiconductor device comprising: a substrate having an insulating surface; a semiconductor film over the substrate; source and drain regions formed in the semiconductor film; and a plurality of channel forming regions formed in the semiconductor film, wherein each of the channel forming regions extends between and is contiguous to the source and drain regions; a gate insulating film formed over the semiconductor film; and a gate electrode formed over the plurality of channel forming regions with the gate insulating film interposed therebetween, wherein each one of the channel forming regions is separated from adjacent one of the channel forming regions by a region comprising at least one element selected from the group consisting of oxygen, carbon and nitrogen, interposed therebetween, and wherein a crystal growth direction of the semiconductor film is in parallel with the substrate.
Claim 38
Dependent Claim
16 words
The semiconductor device according to claim 31 , wherein the semiconductor film comprises single crystal silicon.
Claim 39
Dependent Claim
33 words
The semiconductor device according to claim 31 , wherein a low-concentration impurity region is formed between one of the channel forming regions and at least one of the source region and drain region.
Claim 40
Dependent Claim
19 words
The semiconductor device according to claim 31 , wherein the semiconductor device is used in an EL display device.
Claim 41
Dependent Claim
25 words
The semiconductor device according to claim 31 , wherein the semiconductor device is an integrated circuit selected from a SRAM circuit and a DRAM circuit.
Claim 42
Dependent Claim
43 words
An electronic device comprising the semiconductor device according to claim 31 , wherein the electronic device is selected from the group consisting of a TV camera, a head-mounted display, car navigation apparatus, a cellular telephone, a video camera, and a front projection apparatus.
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