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US5894137A
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Semiconductor device with an active layer having a plurality of columnar crystals
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-03-12
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Granted: 1999-04-13
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Expires: 2017-03-12
Abstract
Abstract There is provided a technique for fabricating a thin film transistor having excellent performance. A configuration is employed in which when the thin film transistor is in an on-state, the flowing direction of the on-current coincides with the direction of crystal growth. With such a configuration, grain boundaries of the crystalline silicon in the active layer will not block the on-current. Further, when the thin film transistor is in an off-state, the off-current is always orthogonal to the grain boundaries of the crystalline silicon. The grain boundaries of the crystalline silicon effectively suppresses the off-current in such locations.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hisashi Ohtani
- 👤 Takeshi Fukunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10D; H10D86/00; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0316; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6732; H10D30/6733; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6757; H10D30/711; H10P14/24; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/3816
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
81 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface.
Claim 2
Dependent Claim
81 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface.
Claim 3
Dependent Claim
23 words
A device according to claim 1, wherein said semiconductor film has a monodomain region which can be substantially regarded as a single crystal.
Claim 4
Dependent Claim
29 words
A device according to claim 1, wherein said semiconductor film comprises at least one of elements selected from among Fe, Co, Ni, Ru, Rh, Os, Ir, Cu and Au.
Claim 5
Dependent Claim
23 words
A device according to claim 1, wherein said columnar or acicular crystals extend in a uniform direction between said source and drain regions.
Claim 6
Dependent Claim
12 words
A device according to claim 1, wherein said semiconductor film comprises silicon.
Claim 7
Dependent Claim
23 words
A device according to claim 1, wherein a gate electrode is located adjacent to said base region with an insulating film interposed therebetween.
Claim 8
Dependent Claim
102 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface and grain boundaries of said columnar or acicular crystals extend substantially in a uniform direction between said source and drain regions.
Claim 9
Dependent Claim
102 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface and grain boundaries of said columnar or acicular crystals extend substantially in a uniform direction between said source and drain regions.
Claim 10
Dependent Claim
23 words
A device according to claim 7, wherein said semiconductor film has a monodomain region which can be substantially regarded as a single crystal.
Claim 11
Dependent Claim
29 words
A device according to claim 7, wherein said semiconductor film comprises at least one of elements selected from among Fe, Co, Ni, Ru, Rh, Os, Ir, Cu and Au.
Claim 12
Dependent Claim
12 words
A device according to claim 7, wherein said semiconductor film comprises silicon.
Claim 13
Dependent Claim
23 words
A device according to claim 7, wherein a gate electrode is located adjacent to said base region with an insulating film interposed therebetween.
Claim 14
Dependent Claim
106 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface and said columnar or acicular crystals extend substantially in a uniform direction corresponding with a flowing direction of an on-current of said thin film transistor.
Claim 15
Dependent Claim
106 words
A semiconductor device comprising: a crystalline semiconductor film formed on an insulating surface and including source and drain regions having one conductivity type, floating island regions located between said source and drain regions and having said one conductivity type, and a base region located between said source and drain regions and having a different conductivity type from said one conductivity type, wherein said semiconductor film comprises a plurality of columnar or acicular crystals extending substantially in parallel with said insulating surface and said columnar or acicular crystals extend substantially in a uniform direction corresponding with a flowing direction of an on-current of said thin film transistor.
Claim 16
Dependent Claim
23 words
A device according to claim 12 wherein said semiconductor film has a monodomain region which can be substantially regarded as a single crystal.
Claim 17
Dependent Claim
29 words
A device according to claim 12, wherein said semiconductor film comprises at least one of elements selected from among Fe, Co, Ni, Ru, Rh, Os, Ir, Cu and Au.
Claim 18
Dependent Claim
30 words
A device according to claim 12, wherein an off-current of said thin film transistor flows along grain boundaries of said columnar or acicular crystals extending substantially in said uniform direction.
Claim 19
Dependent Claim
25 words
A device according to claim 12, wherein an off-current of said thin film transistor flows along said base region between said source and drain regions.
Claim 20
Dependent Claim
12 words
A device according to claim 12, wherein said semiconductor film comprises silicon.
Claim 21
Dependent Claim
23 words
A device according to claim 12, wherein a gate electrode is located adjacent to said base region with an insulating film interposed therebetween.
References Cited (Backward Citations)
US5604360A
Cited
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