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US6680240B1
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Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
Assignee: GlobalFoundries US Inc
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Filing: 2002-06-25
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Granted: 2004-01-20
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Expires: 2022-06-25
Abstract
Abstract A silicon-on-insulator (SOI) device with a strained silicon film has a substrate, and a buried oxide layer on the substrate. Silicon islands are formed on the buried oxide layer, the silicon islands being separated from each other by gaps. The buried oxide layers has recesses directly under the gaps. A material fills the recesses and the gaps, this material being different from the material forming the buried oxide layer. The material induces a net amount of strain in the silicon islands, thereby modifying the electrical properties of carriers in the silicon film and improving device performance.
Inventors
- 👤 Witold P. Maszara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D30/791; H10D86/00; H10D86/01; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/014; H10W10/0145; H10W10/061; H10W10/10; H10W10/13; H10W10/17; H10W10/181; H10D86/201
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
103 words
A method of forming strained device film, comprising the steps of: etching recesses in a buried oxide layer of a silicon-on-insulator (SOI) structure having a substrate, a buried oxide layer on the substrate, and a silicon layer on the buried oxide layer, the silicon layer having trenches, and the etching of recesses in the buried oxide layer including etching through the trenches in the silicon layer and through the buried oxide layer to stop on the substrate; and filling the recesses in the buried oxide layer and the trenches with a material that induces a net amount of strain in the silicon layer.
Claim 2
Independent Claim
103 words
A method of forming strained device film, comprising the steps of: etching recesses in a buried oxide layer of a silicon-on-insulator (SOI) structure having a substrate, a buried oxide layer on the substrate, and a silicon layer on the buried oxide layer, the silicon layer having trenches, and the etching of recesses in the buried oxide layer including etching through the trenches in the silicon layer and through the buried oxide layer to stop on the substrate; and filling the recesses in the buried oxide layer and the trenches with a material that induces a net amount of strain in the silicon layer.
Claim 3
Dependent Claim
20 words
The method of claim 1 , wherein the step of etching the recesses includes isotropically etching the buried oxide layer.
Claim 4
Dependent Claim
11 words
The method of claim 2 , wherein the material is nitride.
Claim 5
Dependent Claim
21 words
The method of claim 3 , further comprising planarizing after filling the recesses in the buried oxide layer and the trenches.
Claim 6
Dependent Claim
15 words
The method of claim 4 , further comprising forming semiconductor devices on the silicon layer.
Claim 7
Dependent Claim
15 words
The method of claim 1 , wherein the net amount of strain induced is compressive.
Claim 8
Dependent Claim
16 words
The method of claim 1 , wherein the net amount of strain induced is tensile stress.
Claim 9
Dependent Claim
14 words
The method of claim 1 , wherein the substrate is a bulk SOI wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-01-19 | 2007-07-21 | 2008-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-01-19 | 2011-07-21 | 2012-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-01-19 | 2015-07-21 | 2016-01-20 | $7700.00 | Window Closed / Lapsed |