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US6506620B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Process for manufacturing micromechanical and microoptomechanical structures with backside metalization

Assignee: Omron Corp
•
Filing: 2000-11-27
•
Granted: 2003-01-14
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Expires: 2020-11-27
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Abstract

Abstract The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.

Inventors

  • 👤 Bruce R. Scharf
  • 👤 Joel A. Kubby
  • 👤 Chuang-Chia Lin
  • 👤 Alex T. Tran
  • 👤 Andrew J. Zosel
  • 👤 Peter M. Gulvin
  • 👤 Jingkuang Chen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 03:43
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00436; B81C1/00444; B81C1/00468; B81C1/00484; B81C1/00642; B81C1/0065; B81C1/00666; B81B; B81B2201/00; B81B2201/04; B81B2201/042; B81B2203/00; B81B2203/01; B81B2203/0118; B81C2201/00; B81C2201/01; B81C2201/0101; B81C2201/0128; B81C2201/013; B81C2201/0135; B81C2201/0142

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 80 words
A process for making a micromechanical or microoptomechanical structure in a wafer comprising a single crystal silicon layer bonded to a substrate layer by an insulator layer, the process comprising: defining the structure in the single-crystal silicon layer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the insulator layer, depositing and patterning a polysilicon layer on the insulator layer; metalizing a backside of the structure; and releasing the structure.
Claim 2
Dependent Claim 80 words
A process for making a micromechanical or microoptomechanical structure in a wafer comprising a single crystal silicon layer bonded to a substrate layer by an insulator layer, the process comprising: defining the structure in the single-crystal silicon layer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the insulator layer, depositing and patterning a polysilicon layer on the insulator layer; metalizing a backside of the structure; and releasing the structure.
Claim 3
Dependent Claim 26 words
The process of claim 1 wherein selectively etching the single crystal silicon further comprises the step photolithographically patterning and dry etching the single crystal silicon layer.
Claim 4
Dependent Claim 13 words
The process of claim 1 wherein the insulator layer is an oxide layer.
Claim 5
Dependent Claim 59 words
The process of claim 1 wherein metalizing the backside of the structure comprises: etching the substrate layer and insulator away from a backside of the wafer until a backside of the single crystal silicon layer of the structure is exposed; and depositing a coating of metal on the exposed backside of the single crystal silicon layer of the structure.
Claim 6
Dependent Claim 20 words
The process of claim 4 wherein the metal is selected from the group consisting of gold, aluminum, chromium and platinum.
Claim 7
Dependent Claim 32 words
The process of claim 1 further comprising: depositing a PSG layer on the polysilicon layer; patterning the PSG layer and polysilicon layer; depositing a protective oxide layer prior to releasing the structure.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-01-13 2006-07-15 2007-01-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-01-13 2010-07-15 2011-01-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-01-13 2014-07-15 2015-01-14 $7700.00 Window Closed / Lapsed

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