US6084257A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Single crystal silicon sensor with high aspect ratio and curvilinear structures
Assignee: NOVASENSOR LUCAS
•
Filing: 1995-05-24
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Granted: 2000-07-04
•
Expires: 2015-05-24
Abstract
Abstract In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
Inventors
- 👤 Kurt E. Petersen
- 👤 Nadim Maluf
- 👤 Wendell McCulley
- 👤 John Logan
- 👤 Erno Klaasen
- 👤 Jan M. Noworolski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:56
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; G01P15/125; G01P2015/0805; G01P2015/0808; G01P2015/0811; G01P2015/0814; Y; Y10; Y10S; Y10S73/00; Y10S73/01
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
77 words
A semiconductor transducer comprising: a first single crystal silicon wafer layer; a curvilinear single crystal silicon beam formed in said first wafer layer and including two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces; and a second single crystal silicon wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam is suspended opposite the recessed region.
Claim 2
Dependent Claim
77 words
A semiconductor transducer comprising: a first single crystal silicon wafer layer; a curvilinear single crystal silicon beam formed in said first wafer layer and including two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces; and a second single crystal silicon wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam is suspended opposite the recessed region.
Claim 3
Dependent Claim
19 words
The transducer of claim 1 wherein said first wafer layer and said second wafer layer are fusion bonded together.
Claim 4
Dependent Claim
16 words
The transducer of claim 1 wherein said first layer is formed of (100) oriented silicon crystal.
Claim 5
Dependent Claim
25 words
The transducer of claim 1 wherein an aspect ratio of the first substantially vertical surfaces to thc first generally horizontal surfaces is at least 5:1.
Claim 6
Dependent Claim
25 words
The transducer of claim 1 wherein an aspect ratio of the first substantially vertical surfaces to the first generally horizontal surfaces is at least 20:1.
Claim 7
Dependent Claim
65 words
The transducer of claim 1, wherein said beam further includes two generally opposite facing second substantially vertical surfaces and two generally opposite facing second generally horizontal surfaces; and wherein an aspect ratio of the first substantially vertical surfaces to the first generally horizontal surfaces differs from the aspect ratio of the second substantially vertical surfaces to the second generally horizontal surfaces by at least 2:1.
Claim 8
Dependent Claim
19 words
The transducer of claim 1 wherein said first substantially vertical surface has a height of at least 10 microns.
Claim 9
Dependent Claim
74 words
A semiconductor transducer produced by: providing a first single crystal silicon wafer layer; providing a carrier including a recessed region; bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer; and etching substantially vertically through the first wafer layer opposite the recessed region in a curvilinear pattern so as to form a curvilinear beam structure integral with the first wafer layer and suspended over the recessed region.
Claim 10
Dependent Claim
74 words
A semiconductor transducer produced by: providing a first single crystal silicon wafer layer; providing a carrier including a recessed region; bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer; and etching substantially vertically through the first wafer layer opposite the recessed region in a curvilinear pattern so as to form a curvilinear beam structure integral with the first wafer layer and suspended over the recessed region.
Claim 11
Dependent Claim
11 words
The transducer of claim 8 wherein etching includes reactive ion etching.
Claim 12
Dependent Claim
21 words
The transducer of claim 8 wherein providing the first wafer layer includes providing a single crystal (100) oriented silicon wafer layer.
Claim 13
Dependent Claim
18 words
The transducer of claim 8 further including thinning the first wafer layer to not less than ten microns.
Claim 14
Dependent Claim
21 words
The transducer of claim 1 wherein said curvilinear beam is secured at only one end thereof to said first wafer layer.
Claim 15
Dependent Claim
30 words
The transducer of claim 1 wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a seismic mass at the other end thereof.
Claim 16
Dependent Claim
31 words
The transducer of claim 1 wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes an electronic circuit formed in the other end thereof.
Claim 17
Dependent Claim
43 words
The transducer of claim 1, wherein said first layer is formed of (100) oriented silicon crystal; and wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes an electronic circuit formed in the other end thereof.
Claim 18
Dependent Claim
33 words
The transducer of claim 1 wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a plurality of vertical plates formed in the other end thereof.
Claim 19
Dependent Claim
46 words
The transducer of claim 1, wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a plurality of vertical plates formed in the other end thereof; and wherein said vertical plates have an aspect ratio of at least 10:1.
Claim 20
Dependent Claim
45 words
The transducer of claim 1, wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a plurality of vertical plates formed in the other end thereof and further includes an electronic circuit formed in the other end thereof.
Claim 21
Dependent Claim
57 words
The transducer of claim 1, wherein said first layer is formed of (100) oriented silicon crystal; and wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a plurality of vertical plates formed in the other end thereof and further includes an electronic circuit formed in the other end thereof.
Claim 22
Dependent Claim
69 words
The transducer of claim 1, wherein said first layer is formed of (100) oriented silicon crystal; wherein said curvilinear beam is secured at one end thereof to said first wafer layer and includes a plurality of vertical plates formed in the other end thereof and further includes an electronic circuit formed in the other end thereof; and wherein said vertical plates have an aspect ratio of at least 10:1.
Claim 23
Dependent Claim
20 words
The transducer of claim 1 wherein said curvilinear beam is secured at both ends thereof to said first wafer layer.
Claim 24
Dependent Claim
23 words
The transducer of claim 1 wherein said curvilinear beam includes a plate secured at only one end thereof to said first wafer layer.
Claim 25
Dependent Claim
7 words
A transducer produced according to claim 8.
Claim 26
Dependent Claim
7 words
A transducer produced according to claim 11.
Claim 27
Dependent Claim
106 words
A semiconductor transducer comprising: a first single crystal silicon wafer layer; a curvilinear single crystal silicon beam structure formed in said first wafer layer and secured at one end thereof to said first wafer layer and including a plurality of vertical plates formed in the other end thereof wherein the curvilinear beam structure includes two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces; and a second single crystal wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam structure is suspended opposite the recessed region.
Claim 28
Dependent Claim
106 words
A semiconductor transducer comprising: a first single crystal silicon wafer layer; a curvilinear single crystal silicon beam structure formed in said first wafer layer and secured at one end thereof to said first wafer layer and including a plurality of vertical plates formed in the other end thereof wherein the curvilinear beam structure includes two generally opposite facing first substantially vertical surfaces and two generally opposite facing first generally horizontal surfaces; and a second single crystal wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said curvilinear beam structure is suspended opposite the recessed region.
Claim 29
Dependent Claim
17 words
The transducer of claim 25 wherein the vertical plates have an aspect ratio of at least 10:1.
Claim 30
Dependent Claim
20 words
The transducer of claim 25 further including: an electronic circuit formed in the other end of the curvilinear beam structure.
Claim 31
Dependent Claim
16 words
The transducer of claim 25 wherein the first layer is formed of (100) oriented silicon crystal.
Claim 32
Dependent Claim
44 words
The transducer of claim 25 further including: an electronic circuit formed in the other end of the curvilinear beam structure; wherein the vertical plates have an aspect ratio of at least 10:1; and wherein the first layer is formed of (100) oriented silicon crystal.
Claim 33
Dependent Claim
22 words
The semiconductor transducer of claim 1 wherein said recessed region of said second single crystal silicon wafer has a generally planar surface.
Claim 34
Dependent Claim
26 words
The semiconductor transducer of claim 1 wherein one of said two generally opposite facing first generally horizontal surfaces faces said recessed region and is generally planar.
Claim 35
Dependent Claim
14 words
The transducer of claim 23 wherein said recessed region has a generally planar surface.
Claim 36
Dependent Claim
21 words
The transducer of claim 23 wherein said curvilinear beam has a generally planar surface suspended over and facing said recessed region.
Claim 37
Dependent Claim
22 words
The semiconductor transducer of claim 25 wherein said recessed region of said second single crystal silicon wafer has a generally planar surface.
Claim 38
Dependent Claim
26 words
The semiconductor transducer of claim 25 wherein one of said two generally opposite facing first generally horizontal surfaces faces said recessed region and is generally planar.
Claim 39
Dependent Claim
46 words
A semiconductor transducer comprising: a single crystal silicon substrate; a curvilinear single crystal silicon structure formed in said substrate and including two generally oppositely disposed substantially vertical surfaces and two oppositely disposed generally horizontal surfaces; and a generally planar surface over which said structure is suspended.
Claim 40
Dependent Claim
46 words
A semiconductor transducer comprising: a single crystal silicon substrate; a curvilinear single crystal silicon structure formed in said substrate and including two generally oppositely disposed substantially vertical surfaces and two oppositely disposed generally horizontal surfaces; and a generally planar surface over which said structure is suspended.
Claim 41
Dependent Claim
25 words
The semiconductor transducer of claim 36 wherein one of said two horizontal surfaces of said curvilinear structure faces the planar surface and is generally planar.
Claim 42
Dependent Claim
23 words
The semiconductor transducer of claim 36 further comprising a carrier, said carrier defines said generally planar surface over which said structure is suspended.
Claim 43
Dependent Claim
23 words
The semiconductor transducer of claim 38 wherein said carrier includes a silicon wafer layer, said substrate and said carrier are fusion bonded together.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-04 | 2004-01-03 | 2004-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-04 | 2008-01-03 | 2008-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-04 | 2012-01-03 | 2012-07-04 | $7700.00 | Window Closed / Lapsed |