US5569355A
Expired / Lapsed
US
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Method for fabrication of microchannel electron multipliers
Assignee: Burle Technologies Inc
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Filing: 1995-01-11
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Granted: 1996-10-29
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Expires: 2015-01-11
Abstract
Abstract The present invention discloses a method for constructing a completely micromachined MCP that is activated with thin-film dynodes wherein the interchannel regions are first dry etched in the substrate, resulting in channel pillars. The etched portions of the substrate are then back filled and the channel pillars are thereafter removed to produce a micromachined perforated microchannel plate. The technique may be employed to produce an active element for an integrated image tube or photomultiplier tube.
Inventors
- 👤 Alan M. Then
- 👤 Steven M. Shank
- 👤 Robert J. Soave
- 👤 G. William Tasker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:04
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/12; H01J9/125; H01J2201/00; H01J2201/32
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
74 words
A method of manufacturing a microchannel plate comprising the steps of: forming a body of etchable material; applying a flux of reactive particles against the body in selected areas for removing material from the selected areas; back filling the selected areas with a membrane material; selectively removing material adjacent the back filled areas to produce microchannels in the membrane material; and activating the microchannels for electron multiplication by forming a continuous thin-film dynode therein.
Claim 2
Independent Claim
74 words
A method of manufacturing a microchannel plate comprising the steps of: forming a body of etchable material; applying a flux of reactive particles against the body in selected areas for removing material from the selected areas; back filling the selected areas with a membrane material; selectively removing material adjacent the back filled areas to produce microchannels in the membrane material; and activating the microchannels for electron multiplication by forming a continuous thin-film dynode therein.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the thin-film dynode has a thickness of less than about 1,000 nm to exhibit secondary electron emissivity.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the body is a wafer and the flux is applied against one face of said wafer.
Claim 5
Dependent Claim
17 words
The method of claim 1 further comprising the step of establishing communication between sides of the body.
Claim 6
Dependent Claim
25 words
The method of claim 3 wherein the flux is applied to the wafer for a time sufficient to produce a desired depth in the body.
Claim 7
Dependent Claim
47 words
The method of claim 5 further comprising the step of: establishing communication between the faces of the body by removing a portion of the face of the body opposite the face against which the flux is applied to expose the ends of the channels within the body.
Claim 8
Dependent Claim
32 words
The method of claim 1 wherein the step of applying the flux in selected areas includes the step of applying a patterned etch mask to said body for establishing the selected areas.
Claim 9
Dependent Claim
12 words
The method of claim 7 wherein the etch mask is a photopolymer.
Claim 10
Dependent Claim
14 words
The method of claim 7 wherein the etch mask is an etch resistant metal.
Claim 11
Dependent Claim
16 words
The method of claim 7 wherein the etch mask is an etch resistant oxide or nitride.
Claim 12
Dependent Claim
25 words
The method of claim 1 wherein the step of activating the microchannels includes forming a secondary electron emissive layer on the walls of the microchannels.
Claim 13
Dependent Claim
24 words
The method of claim 1 wherein the step of activating the microchannels comprises forming a current carrying layer on the walls of the microchannels.
Claim 14
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the microchannels is accomplished by a chemical vapor deposition step.
Claim 15
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the microchannels is accomplished by reaction with a reactive species.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the microchannels is accomplished by a liquid phase deposition step.
Claim 17
Dependent Claim
30 words
The method of claim 1 wherein the step of activating the microchannels includes selecting a membrane material which exhibits secondary electron emissivity when subjected to a flux of reactive species.
Claim 18
Dependent Claim
13 words
The method of claim 1 wherein the flux is a direction specific agent.
Claim 19
Dependent Claim
12 words
The method of claim 1 wherein the flux is an ion beam.
Claim 20
Dependent Claim
14 words
The method of claim 1 wherein the flux is generated by a glow discharge.
Claim 21
Dependent Claim
14 words
The method of claim 1 wherein the flux is a plasma assisted ion beam.
Claim 22
Dependent Claim
11 words
The method of claim 1 wherein the body is a semiconductor.
Claim 23
Dependent Claim
10 words
The method of claim 21 wherein the semiconductor is Si.
Claim 24
Dependent Claim
43 words
The method of claim 1 wherein selected areas are back filled with a material selected from the group consisting of: Si 3 N 4 , AlN, Al 2 O 3 , SiO 2 , Si x N y O z , and SiC.
Claim 25
Dependent Claim
21 words
The method of claim 1 further comprising forming an integrated structure having window portions bonded to the substrate by anodic bonding.
Claim 26
Dependent Claim
61 words
The method of claim 1 wherein the microchannels have wall portions with a length (l) and width (d) defining a selected aspect ratio ∝=l/d and further including the step of: increasing the aspect ratio by at least one of depositing dielectric material on wall portions after removing the material adjacent the membrane material and oxidizing the body prior to back filling.
Claim 27
Independent Claim
89 words
A method for manufacturing an electron multiplier comprising forming a body of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one perforation; filling the perforation with a membrane material resistant to an etching process for material of the body and removing material of the body by said process around the filled perforation to form at least one channel in the membrane material suitable for receiving a thin-film dynode to support electron multiplication.
Claim 28
Independent Claim
89 words
A method for manufacturing an electron multiplier comprising forming a body of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one perforation; filling the perforation with a membrane material resistant to an etching process for material of the body and removing material of the body by said process around the filled perforation to form at least one channel in the membrane material suitable for receiving a thin-film dynode to support electron multiplication.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-29 | 2000-04-29 | 2000-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-29 | 2004-04-29 | 2004-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-29 | 2008-04-29 | 2008-10-29 | $7700.00 | Window Closed / Lapsed |