US5205902A
Expired / Lapsed
US
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Method of manufacturing microchannel electron multipliers
Assignee: Burle Technologies Inc
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Filing: 1991-11-12
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Granted: 1993-04-27
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Expires: 2011-11-12
Abstract
Abstract A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.
Inventors
- 👤 Jerry R. Horton
- 👤 G. William Tasker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:53
CPC Classifications
H; H01; H01J; H01J43/00; H01J43/04; H01J43/06; H01J43/18; H01J43/24; H01J43/246; H01J9/00; H01J9/02; H01J9/12; H01J2201/00; H01J2201/32; H01J2201/34; H01J2201/342; H01J2201/3421; H01J2201/3423; H01J2201/3426
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
78 words
A method for manufacturing a microchannel plate comprising the steps of: forming a body of etchable material; directionally applying a flux of reactive particles against the body in selected areas corresponding to microchannel locations for removing material from the selected areas to produce microchannels in the body aligned in accordance with the directionality of the applied flux; and activating the microchannels by forming a continuous thin film dynode of less than 1,000 nm to exhibit secondary electron emissivity.
Claim 2
Independent Claim
78 words
A method for manufacturing a microchannel plate comprising the steps of: forming a body of etchable material; directionally applying a flux of reactive particles against the body in selected areas corresponding to microchannel locations for removing material from the selected areas to produce microchannels in the body aligned in accordance with the directionality of the applied flux; and activating the microchannels by forming a continuous thin film dynode of less than 1,000 nm to exhibit secondary electron emissivity.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the body is a wafer and the flux is applied against at least one face of said wafer.
Claim 4
Dependent Claim
32 words
The method of claim 2 wherein the flux is applied to the wafer for a time sufficient to extend the channels through the wafer from at least one face to the other.
Claim 5
Dependent Claim
20 words
The method of claim 1 further comprising the step of establishing communication between sides of the body through the microchannels.
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein the flux is applied to the wafer for a time sufficient to produce said microchannels to a desired depth in the body.
Claim 7
Dependent Claim
47 words
The method of claim 5 further comprising the step of establishing communication between the faces of the body by removing a portion of the face of the body opposite the face against which the flux is applied to expose the ends of the channels within the body.
Claim 8
Dependent Claim
20 words
The method of claim 1 further including depositing electrode material on at least one of the faces of the body.
Claim 9
Dependent Claim
31 words
The method of claim 1 wherein the step of applying the flux in selected areas includes the step of applying an etch mask to said body for establishing the selected areas.
Claim 10
Dependent Claim
14 words
The method of claim 8 wherein the etch mask is a selectively exposed photopolymer.
Claim 11
Dependent Claim
15 words
The method of claim 8 wherein the etch mask is an etch resistant apertured metal.
Claim 12
Dependent Claim
17 words
The method of claim 8 wherein the etch mask is an etch resistant apertured oxide or nitride.
Claim 13
Dependent Claim
24 words
The method of claim 1 wherein the step of activating the microchannels includes forming a secondary emissive layer on the walls of the microchannels.
Claim 14
Dependent Claim
24 words
The method of claim 1 wherein the step of activating the microchannels comprises forming a current carrying layer in the walls of the microchannels.
Claim 15
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the channels is accomplished by a chemical vapor deposition step.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the channels is accomplished by reaction with a reactive species.
Claim 17
Dependent Claim
20 words
The method of claim 1 wherein the step of activating the channels is accomplished by a liquid phase deposition step.
Claim 18
Dependent Claim
28 words
The method of claim 1 wherein the step of activating the microchannels includes selecting a substrate material which exhibits secondary emissivity when subjected to a flux reactive species.
Claim 19
Dependent Claim
13 words
The method of claim 1 wherein the flux is a direction specific agent.
Claim 20
Dependent Claim
12 words
The method of claim 1 wherein the flux is an ion beam.
Claim 21
Dependent Claim
14 words
The method of claim 1 wherein the flux is generated by a glow discharge.
Claim 22
Dependent Claim
14 words
The method of claim 1 wherein the flux is a plasma assisted ion beam.
Claim 23
Dependent Claim
11 words
The method of claim 1 wherein the substrate is a semiconductor.
Claim 24
Dependent Claim
24 words
The method of claim 22 wherein the semiconductor is a material selected from the group consisting of: GaAs, GaP, InP, AlAs, AlSb and Si.
Claim 25
Dependent Claim
13 words
The method of claim 1 wherein the substrate is a single component dielectric.
Claim 26
Dependent Claim
31 words
The method of claim 24 wherein the dielectric is a material selected from the group consisting of: Si 3 N 4 , AlN, Al 2 O 3 and SiO 2 glass.
Claim 27
Independent Claim
56 words
A method for manufacturing an electron multiplier comprising forming a body of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one electron multiplication channel in the body suitable for receiving a thin film dynode of less than 1,000 nm.
Claim 28
Independent Claim
56 words
A method for manufacturing an electron multiplier comprising forming a body of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one electron multiplication channel in the body suitable for receiving a thin film dynode of less than 1,000 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-26 | 1996-10-26 | 1997-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-26 | 2000-10-26 | 2001-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-26 | 2004-10-26 | 2005-04-27 | $7700.00 | Window Closed / Lapsed |