Patent US6506620B1 successfully refreshed from Google Patents.
US6506620B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing micromechanical and microoptomechanical structures with backside metalization
Assignee: Omron Corp
•
Filing: 2000-11-27
•
Granted: 2003-01-14
•
Expires: 2020-11-27
Abstract
Abstract The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
Inventors
- 👤 Bruce R. Scharf
- 👤 Joel A. Kubby
- 👤 Chuang-Chia Lin
- 👤 Alex T. Tran
- 👤 Andrew J. Zosel
- 👤 Peter M. Gulvin
- 👤 Jingkuang Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:04
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00436; B81C1/00444; B81C1/00468; B81C1/00484; B81C1/00642; B81C1/0065; B81C1/00666; B81B; B81B2201/00; B81B2201/04; B81B2201/042; B81B2203/00; B81B2203/01; B81B2203/0118; B81C2201/00; B81C2201/01; B81C2201/0101; B81C2201/0128; B81C2201/013; B81C2201/0135; B81C2201/0142
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
A process for making a micromechanical or microoptomechanical structure in a wafer comprising a single crystal silicon layer bonded to a substrate layer by an insulator layer, the process comprising: defining the structure in the single-crystal silicon layer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the insulator layer, depositing and patterning a polysilicon layer on the insulator layer; metalizing a backside of the structure; and releasing the structure.
Claim 2
Dependent Claim
80 words
A process for making a micromechanical or microoptomechanical structure in a wafer comprising a single crystal silicon layer bonded to a substrate layer by an insulator layer, the process comprising: defining the structure in the single-crystal silicon layer; selectively etching the single crystal silicon layer; photolithographically patterning and etching the selectively etched single crystal silicon layer and the insulator layer, depositing and patterning a polysilicon layer on the insulator layer; metalizing a backside of the structure; and releasing the structure.
Claim 3
Dependent Claim
26 words
The process of claim 1 wherein selectively etching the single crystal silicon further comprises the step photolithographically patterning and dry etching the single crystal silicon layer.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein the insulator layer is an oxide layer.
Claim 5
Dependent Claim
59 words
The process of claim 1 wherein metalizing the backside of the structure comprises: etching the substrate layer and insulator away from a backside of the wafer until a backside of the single crystal silicon layer of the structure is exposed; and depositing a coating of metal on the exposed backside of the single crystal silicon layer of the structure.
Claim 6
Dependent Claim
20 words
The process of claim 4 wherein the metal is selected from the group consisting of gold, aluminum, chromium and platinum.
Claim 7
Dependent Claim
32 words
The process of claim 1 further comprising: depositing a PSG layer on the polysilicon layer; patterning the PSG layer and polysilicon layer; depositing a protective oxide layer prior to releasing the structure.
References Cited (Backward Citations)
US6149190A
Cited
DE4318466A1
Cited
US5476819A
Cited
US5589083A
Cited
US5645684A
Cited
US5660680A
Cited
US5484073A
Cited
US5569355A
Cited
US6084257A
Cited
US5962081A
Cited
DE19603829A1
Cited
US6074890A
Cited
US5853960A
Cited
US6117344A
Cited
US6002507A
Cited
US6014240A
Cited
US6238581B1
Cited
US6362512B1
Cited
US6379989B1
Cited
US20020046985A1
Cited
US20020050744A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-13 | 2006-07-15 | 2007-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-13 | 2010-07-15 | 2011-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-13 | 2014-07-15 | 2015-01-14 | $7700.00 | Window Closed / Lapsed |