US6319333B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon-on-insulator islands
Assignee: Micron Technology Inc
•
Filing: 1998-08-07
•
Granted: 2001-11-20
•
Expires: 2018-08-07
Abstract
Abstract Silicon-on-insulator (SOI) islands are formed in a silicon substrate. A first set of trenches is formed in the silicon substrate, leaving laterally-isolated rows of silicon between the trenches. The first set of trenches is then filled with silicon oxide. A second set of trenches is then formed in the silicon substrate at a direction orthogonal to the first set of trenches. Silicon nitride is then deposited over the sidewalls of the second set of trenches. An isotropic chemical etch is then used to fully undercut narrow the laterally-isolated rows of silicon between the second set of trenches to form evacuated regions beneath silicon islands. A subsequent oxidation step fills the evacuated regions to form the SOI islands.
Inventors
- 👤 Wendell P. Noble
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/014; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
121 words
A silicon-on-insulator structure on a supporting surface of a silicon substrate, comprising: a fully undercut silicon island electrically isolated from the silicon substrate and having one or more lateral surfaces substantially perpendicular to the supporting surface of the silicon substrate; a silicon oxide bar on and extending from the supporting surface of the silicon substrate and having one or more lateral surfaces, each substantially perpendicular to the supporting surface of the silicon substrate and with at least one of the lateral surfaces attached to one of the lateral surfaces of the fully undercut silicon island and thereby holding the fully undercut silicon island above the supporting surface to define a vertical gap fully separating the silicon island and the supporting surface.
Claim 2
Dependent Claim
121 words
A silicon-on-insulator structure on a supporting surface of a silicon substrate, comprising: a fully undercut silicon island electrically isolated from the silicon substrate and having one or more lateral surfaces substantially perpendicular to the supporting surface of the silicon substrate; a silicon oxide bar on and extending from the supporting surface of the silicon substrate and having one or more lateral surfaces, each substantially perpendicular to the supporting surface of the silicon substrate and with at least one of the lateral surfaces attached to one of the lateral surfaces of the fully undercut silicon island and thereby holding the fully undercut silicon island above the supporting surface to define a vertical gap fully separating the silicon island and the supporting surface.
Claim 3
Dependent Claim
20 words
The silicon-on-insulator structure of claim 1 , wherein the silicon island has a width of approximately 0.5 microns or less.
Claim 4
Dependent Claim
180 words
An integrated-circuit-processing structure comprising: a semiconductive island having top and bottom surfaces and first and second lateral surfaces; an oxide layer on the top surface and having first and second lateral surfaces substantially perpendicular to the top surface of the semiconductive island; a silicon-nitride layer on the oxide layer and having first and second lateral surfaces substantially perpendicular to the top surface of the semiconductive island; a silicon oxide structure having first and second lateral surfaces and a bottom surface generally perpendicular to the first and second lateral surfaces, with the first lateral surface abutting the first lateral surfaces of the semiconductive island, the oxide layer, and the silicon-nitride layer; a silicon nitride sidewall abutting the second lateral surfaces of the semiconductive island, the oxide layer, and the silicon-nitride layer; and a semiconductive substrate having a top surface abutting the bottom surface of the silicon oxide structure, and fully separated from the bottom surface of the semiconductive island to define a vertical gap fully separating the bottom surface of the semiconductive island and the top surface of the semiconductive substrate.
Claim 5
Dependent Claim
180 words
An integrated-circuit-processing structure comprising: a semiconductive island having top and bottom surfaces and first and second lateral surfaces; an oxide layer on the top surface and having first and second lateral surfaces substantially perpendicular to the top surface of the semiconductive island; a silicon-nitride layer on the oxide layer and having first and second lateral surfaces substantially perpendicular to the top surface of the semiconductive island; a silicon oxide structure having first and second lateral surfaces and a bottom surface generally perpendicular to the first and second lateral surfaces, with the first lateral surface abutting the first lateral surfaces of the semiconductive island, the oxide layer, and the silicon-nitride layer; a silicon nitride sidewall abutting the second lateral surfaces of the semiconductive island, the oxide layer, and the silicon-nitride layer; and a semiconductive substrate having a top surface abutting the bottom surface of the silicon oxide structure, and fully separated from the bottom surface of the semiconductive island to define a vertical gap fully separating the bottom surface of the semiconductive island and the top surface of the semiconductive substrate.
Claim 6
Dependent Claim
84 words
An integated-circuit structure comprising: a semiconductive substrate having a top surface; a semiconductive island having top and bottom surfaces and a peripheral lateral surface between the top and bottom surfaces, with none of the surfaces of the semiconductive island contacting the semiconductive substrate; and an insulative pillar attached to the semiconductive substrate and having a lateral surface attached to the peripheral lateral surface of the semiconductive island for fully supporting the semiconductive island above a gap over the top surface of the semiconductive substrate.
Claim 7
Dependent Claim
84 words
An integated-circuit structure comprising: a semiconductive substrate having a top surface; a semiconductive island having top and bottom surfaces and a peripheral lateral surface between the top and bottom surfaces, with none of the surfaces of the semiconductive island contacting the semiconductive substrate; and an insulative pillar attached to the semiconductive substrate and having a lateral surface attached to the peripheral lateral surface of the semiconductive island for fully supporting the semiconductive island above a gap over the top surface of the semiconductive substrate.
Claim 8
Dependent Claim
74 words
A structure comprising: a semiconductive substrate having a top surface; an insulative pillar attached to and extending from the top surface of the substrate; and a semiconductive island cantilevered off a lateral surface of the insulative pillar, the island having a bottom surface with no support structures extending from the top surface of the substrate to the bottom surface of the island to facilitate low-stress introduction of oxide between the top and bottom surfaces.
Claim 9
Dependent Claim
74 words
A structure comprising: a semiconductive substrate having a top surface; an insulative pillar attached to and extending from the top surface of the substrate; and a semiconductive island cantilevered off a lateral surface of the insulative pillar, the island having a bottom surface with no support structures extending from the top surface of the substrate to the bottom surface of the island to facilitate low-stress introduction of oxide between the top and bottom surfaces.
Claim 10
Dependent Claim
14 words
The structure of claim 5 , wherein the semiconductive island has a rectilinear shape.
Claim 11
Dependent Claim
11 words
The structure of claim 5 wherein the semiconductive island comprises silicon.
Claim 12
Dependent Claim
16 words
The structure of claim 5 , wherein the insulative pillar consists essentially of a silicon oxide.
References Cited (Backward Citations)
US3457123A
Cited
US3407479A
Cited
US3471754A
Cited
US3689357A
Cited
US4419415A
Cited
US4437226A
Cited
US4625391A
Cited
US4580331A
Cited
US4561932A
Cited
US4763183A
Cited
US4685198A
Cited
US4755481A
Cited
US4845048A
Cited
US5177028A
Cited
US5234535A
Cited
US5422499A
Cited
US5426070A
Cited
US5441591A
Cited
US5416041A
Cited
US5773152A
Cited
US5710057A
Cited
US5691230A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-19 | 2005-05-21 | 2005-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-19 | 2009-05-21 | 2009-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-19 | 2013-05-21 | 2013-11-20 | $7700.00 | Window Closed / Lapsed |