US5811283A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon on insulator (SOI) dram cell structure and process
Assignee: AISAWA TECHNOLOGIES LLC
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Filing: 1996-10-22
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Granted: 1998-09-22
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Expires: 2016-10-22
Abstract
Abstract A silicon on insulator (SOI) DRAM has a layer of buried oxide covered by a thin layer of crystalline silicon on the surface of a bulk silicon substrate. Field oxide regions are formed extending through the thin crystalline silicon surface layer and into contact with the buried oxide layer. Gate oxide layers, gate electrodes and source/drain regions for the transfer FETs of the DRAM are formed in and on the thin crystalline silicon surface layer in the active regions between the field oxide regions. A trench is opened through one of the source/drain regions of each of the transfer FETs. A layer of doped polysilicon is provided to line the trenches and is patterned to form at least a part of the bottom electrodes of the charge storage capacitors for the DRAM. The bottom electrodes are covered with a thin dielectric layer and an upper electrode of doped polysilicon is provided. Preferably, the trench for the bottom capacitor electrode extends through the buried oxide layer and may extend into the bulk silicon.
Inventors
- 👤 Shih-Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/30; H10B12/37; H10B12/377; H10D; H10D86/00; H10D86/01; H10D86/201
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
176 words
A method of making a memory comprising: providing a substrate having a surface layer of silicon and a buried insulating layer under the surface layer of silicon; forming field isolation structures in and on the surface layer of silicon, thereby defining active device regions on the surface layer of silicon; forming a layer of oxide on the active device regions of the substrate; forming gate electrodes on the layer of oxide; forming first and second source/drain regions in the surface layer of silicon; depositing a layer of insulating material over the gate electrodes; forming a mask over the layer of insulating material having openings over the first source/drain regions; etching trenches through the layer of insulating material, the surface layer of silicon and into the buried insulating layer; depositing a first layer of polysilicon to line the trenches and then patterning the first layer of polysilicon to define, at least in part, lower capacitor electrodes; providing a dielectric layer over the lower capacitor electrode; and depositing a second layer of polysilicon and forming upper capacitor electrodes.
Claim 2
Independent Claim
176 words
A method of making a memory comprising: providing a substrate having a surface layer of silicon and a buried insulating layer under the surface layer of silicon; forming field isolation structures in and on the surface layer of silicon, thereby defining active device regions on the surface layer of silicon; forming a layer of oxide on the active device regions of the substrate; forming gate electrodes on the layer of oxide; forming first and second source/drain regions in the surface layer of silicon; depositing a layer of insulating material over the gate electrodes; forming a mask over the layer of insulating material having openings over the first source/drain regions; etching trenches through the layer of insulating material, the surface layer of silicon and into the buried insulating layer; depositing a first layer of polysilicon to line the trenches and then patterning the first layer of polysilicon to define, at least in part, lower capacitor electrodes; providing a dielectric layer over the lower capacitor electrode; and depositing a second layer of polysilicon and forming upper capacitor electrodes.
Claim 3
Dependent Claim
45 words
The method of claim 1, wherein the first and second source/drain regions are formed by implanting impurities into the substrate using the gate electrodes at least partially as a partial mask, forming first and second source drain regions on either side of the gate electrodes.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein the lower capacitor electrodes are formed in contact with the first source/drain regions.
Claim 5
Dependent Claim
40 words
The method of claim 2, wherein the lower capacitor electrodes are doped with an impurity and wherein, after deposition of the first polysilicon layer, annealing is performed to diffuse impurities from the lower capacitor electrodes into the surface silicon layer.
Claim 6
Dependent Claim
22 words
The method of claim 2, wherein the substrate is formed on a silicon substrate by implantation of oxygen ions into the substrate.
Claim 7
Dependent Claim
28 words
The method of claim 1, wherein the trench passes through the first source/drain region, with portions of the first source/drain region remaining on either side of the trench.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |