US6045625A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Buried oxide with a thermal expansion matching layer for SOI
Assignee: Texas Instruments Inc
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Filing: 1997-12-05
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Granted: 2000-04-04
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Expires: 2017-12-05
Abstract
Abstract A silicon-on-insulator structure (10) having a thick buried multi-layer (14) is disclosed herein. The thick buried multi-layer (14) comprises a thermal expansion coefficient matching layer (14b) between two insulator layers (14a,14c). The thermal expansion co-efficient matching layer (14b) comprises a material that more closely matches the thermal expansion co-efficient of the silicon substrate (12). Examples include polysilicon and nitridized oxide.
Inventors
- 👤 Theodore W. Houston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:15
CPC Classifications
H; H10; H10D; H10D62/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/014; H10W10/041; H10W10/17; H10W10/40
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
61 words
A silicon-on-insulator structure, comprising: a substrate; a device layer comprising silicon; and a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer, wherein said layer of silicon comprises an implanted region.
Claim 2
Dependent Claim
61 words
A silicon-on-insulator structure, comprising: a substrate; a device layer comprising silicon; and a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer, wherein said layer of silicon comprises an implanted region.
Claim 3
Dependent Claim
19 words
The structure of claim 1, wherein said layer of silicon comprises an isolation trench laterally adjacent said implanted region.
Claim 4
Dependent Claim
23 words
The structure of claim 1, wherein a portion of said silicon layer extends through said first dielectric layer to connect to said substrate.
Claim 5
Dependent Claim
24 words
The structure of claim 1, wherein a portion of said silicon layer extends through said first dielectric layer to connect to said device layer.
Claim 6
Dependent Claim
17 words
The structure of claim 1, further comprising a silicide layer on a portion of said silicon layer.
Claim 7
Dependent Claim
21 words
The structure of claim 1, further comprising a contact extending from said device layer through said insulating layer to said substrate.
Claim 8
Dependent Claim
20 words
The structure of claim 6, further comprising silicide in said contact adjacent said substrate and sidewalls of said silicon layer.
Claim 9
Dependent Claim
12 words
The structure of claim 1, wherein said layer of silicon comprises polysilicon.
Claim 10
Dependent Claim
13 words
The structure of claim 1, wherein said layer of silicon comprises amorphous silicon.
Claim 11
Dependent Claim
15 words
The structure of claim 1, wherein said insulating layer is greater than 2 μm thick.
Claim 12
Dependent Claim
71 words
A silicon-on-insulator structure, comprising: a substrate; a device layer; an electrically insulating layer between said substrate and said device layer, said electrically insulating layer comprising: a first layer of oxide adjacent said substrate: a layer of silicon adjacent said first oxide layer: a second layer of oxide located on an opposite side of said silicon layer from said first layer of oxide between said layer of silicon and said device layer.
Claim 13
Dependent Claim
71 words
A silicon-on-insulator structure, comprising: a substrate; a device layer; an electrically insulating layer between said substrate and said device layer, said electrically insulating layer comprising: a first layer of oxide adjacent said substrate: a layer of silicon adjacent said first oxide layer: a second layer of oxide located on an opposite side of said silicon layer from said first layer of oxide between said layer of silicon and said device layer.
Claim 14
Dependent Claim
14 words
The structure of claim 11, wherein said silicon layer comprises: a layer of polysilicon.
Claim 15
Dependent Claim
20 words
The structure of claim 11, wherein said layer of polysilicon is thicker than said first and second layers of oxide.
Claim 16
Dependent Claim
15 words
The structure of claim 11, wherein said silicon layer comprises: a layer of amorphous silicon.
Claim 17
Dependent Claim
82 words
A silicon-on-insulator structure, comprising: a substrate; a device layer comprising silicon; a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer; and a contact extending from said device layer through said insulating layer to said substrate, said contact having silicide in said contact adjacent said substrate and sidewalls of said silicon layer.
Claim 18
Dependent Claim
82 words
A silicon-on-insulator structure, comprising: a substrate; a device layer comprising silicon; a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer; and a contact extending from said device layer through said insulating layer to said substrate, said contact having silicide in said contact adjacent said substrate and sidewalls of said silicon layer.
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