Direct wafer bonded structure method of making

Claim 3

The method of claim 1 wherein the step of forming a high temperature metal nitride layer on the first surface comprises forming a metal nitride layer on the first surface, wherein the metal nitride layer is selected from the group consisting of titanium-nitride, vanadium-nitride, and tungsten nitride; and wherein the step of forming the interlayer on the high temperature metal nitride layer and a portion of the first surface comprises forming a dielectric layer over the high temperature metal nitride layer and a portion of the first surface, and forming a first polycrystalline semiconductor layer on the dielectric layer; and wherein the step of annealing the interlayer comprises annealing the dielectric layer to reduce stresses in the dielectric layer before the step of forming the first polycrystalline semiconductor layer; and wherein the step of planarizing the interlayer comprises planarizing the first polycrystalline semiconductor layer.

Claim 4

The method of claim 2 wherein the step of forming the interlayer on the high temperature metal nitride layer and a portion of the first surface further comprises forming a second polycrystalline semiconductor layer on the dielectric layer before the step of forming the first polycrystalline semiconductor layer wherein the second polycrystalline semiconductor layer has a thickness substantially thinner than thickness of the first polycrystalline semiconductor layer.

Claim 5

The method of claim 1 wherein the step of forming the interlayer comprises the steps of: forming a PETEOS silicon oxide layer over the high temperature metal nitride layer and a portion of the first surface of the active substrate having a thickness on the order of 4000 to 6000 angstroms; forming a first polysilicon layer over the PETEOS layer having a thickness on the order of 500 to 1000 angstroms thick; forming a second polysilicon layer over the first polysilicon layer having a thickness on the order of 15 to 25 microns thick; and wherein the step of annealing the interlayer comprises the step of annealing the PETEOS silicon oxide layer at approximately 1000° C. in an inert ambient having less than 3000 ppm of oxygen to prevent oxidation of the high temperature metal nitride layer.

Claim 6

The method of claim 1 wherein the step of forming a high temperature metal nitride layer on the first surface comprises forming a metal nitride layer on the first surface, wherein the metal nitride layer is selected from the group consisting of titanium-nitride, vanadium-nitride, and tungsten nitride; and wherein the step of forming the interlayer on the high temperature metal nitride layer and a portion of the first surface comprises forming a first dielectric layer on the high temperature metal nitride layer and a portion of the first surface of the active substrate.

Claim 7

The method of claim 5 wherein the step of forming first dielectric on the high temperature metal nitride layer and a portion of the first surface comprises forming a high thermal conductivity dielectric layer.

Claim 8

The method of claim 5 wherein the step of forming the interlayer on the high temperature metal nitride layer and a portion of the first surface further comprises forming a second dielectric layer on the first dielectric layer.

Claim 9

The method of claim 7 wherein the step of planarizing the interlayer comprises planarizing the first dielectric layer before the step of forming the second dielectric layer.

Claim 10

The method of claim 8 wherein the step of forming the first dielectric layer comprises depositing a first layer of PETEOS silicon oxide having a thickness on the order of 10,000 to 20,000 angstroms; wherein the step of annealing the first dielectric layer comprises annealing the first layer of PETEOS silicon oxide at approximately 1000° C. in an inert ambient having less than 3000 ppm of oxygen to prevent oxidation of the high temperature metal nitride layer; wherein the step of planarizing the first dielectric layer comprises removing approximately 5,000 to 15,000 angstroms of the first dielectric layer and mechanically cleaning the first dielectric layer with a secondary polishing pad absent polishing slurry; and wherein the step of forming the second dielectric layer comprises depositing a second layer of PETEOS silicon oxide having a thickness on the order of 5,000 to 15,000 angstroms.

Claim 11

The method of claim 1 wherein the step of developing the photoresist layer comprises developing the photoresist layer absent a photoresist hardening step before the step of etching the high temperature metal nitride layer, and wherein the step of etching the high temperature metal nitride layer comprises etching the high temperature metal nitride in a reactive ion etchant consisting essentially of chlorine.

Claim 12

The method of claim 1 wherein the step of depositing the photoresist layer comprises depositing a positive photoresist and the step of removing the photoresist layer using the non-oxidizing photoresist stripper comprises removing the photoresist layer with a stripper comprising n-methyl pyrrolidone having a basic pH.

Claim 13

The method of claim 11 wherein the step of removing the photoresist layer comprises the steps of: removing the photoresist layer in a first bath of n-methyl pyrrolidone maintained at a temperature of approximately 75° to 85° C.; and removing residual photoresist in a second bath of n-methyl pyrrolidone maintained at approximately 45° to 55° C.

Claim 14

The method of claim 1 further comprising the steps of: forming a first and a second doped region of a second conductivity type extending from the first surface and having a surface concentration on the order of 3.0×10 19 atoms/cm 3 at the first surface; forming a third doped region of the first conductivity between the first and second doped regions extending from the first surface and having a surface concentration on order of 6.5×10 19 atoms/cm 3 ; and removing a portion of the second surface of the active substrate to thin the active substrate; and wherein the step of providing the active substrate of the first conductivity type comprises providing an n-type silicon substrate having a dopant concentration on the order of 1.0×10 15 to 3.0×10 16 atoms/cm 3 , and wherein the step of forming the high temperature metal nitride layer comprises forming a titanium-nitride layer having a thickness on the order of 1000 to 3000 angstroms, and wherein the step of bonding the handle substrate to the first polycrystalline layer comprises bonding the handle substrate to the first polycrystalline semiconductor layer in steam at a temperature of approximately 1050° to 1250° C.

Claim 17

The method of claim 14 further comprising the step of forming a second polysilicon layer on the dielectric layer before the step of forming the first polysilicon layer wherein the second polysilicon layer is of a thickness substantially thinner than thickness of the first polysilicon layer.

Claim 18

The method of claim 14 wherein the step of developing the photoresist layer comprises developing the photoresist layer absent a photoresist hardening step before the step of etching the high temperature metal nitride, and wherein the step of etching the high temperature metal nitride layer comprises etching the high temperature metal nitride in a reactive ion etchant consisting essentially of chlorine.

Claim 19

The method of claim 14 wherein the step of depositing the photoresist layer comprises depositing a positive photoresist and the step of removing the photoresist layer using the non-oxidizing photoresist stripper comprises removing the photoresist layer with a stripper comprising n-methyl pyrrolidone having a basic pH.

Claim 20

The method of claim 17 wherein the step of removing the photoresist layer comprises the steps of removing the photoresist layer in a first bath of n-methyl pyrrolidone maintained at a temperature of approximately 75° to 85° C. and removing residual photoresist in a second bath of n-methyl pyrrolidone maintained at approximately 45° to 55° C.

Claim 21

The method of claim 14 further comprising the steps of: forming a first and a second doped region of a second conductivity type extending from the first surface and having a surface concentration on the order of 3.0×10 19 atoms/cm 3 at the first surface; forming a third doped region of the first conductivity extending from the first surface between the first and second doped regions and having a surface concentration on the order of 6.5×10 19 atoms/cm 3 at the first surface; and removing a portion of the second surface of the active substrate to thin the active substrate; and wherein the step of providing the active substrate of the first conductivity type comprises providing an n-type silicon substrate having a <100> orientation and a dopant concentration on the order of 1.0×10 15 to 3.0×10 16 atoms/cm 3 , and wherein the step of forming the high temperature metal nitride layer comprises forming a titanium-nitride layer having a thickness on the order of 1000 to 3000 angstroms; and wherein the step of annealing the dielectric layer comprises annealing the dielectric layer at approximately 1000° C. in an inert ambient having less than 3000 ppm of oxygen to prevent oxidation of the titanium-nitride layer; and wherein the step of forming the first polysilicon layer comprises forming the first polysilicon layer having a thickness on the order of 15 to 25 microns; and wherein the step of bonding the handle substrate to the first polysilicon layer comprises bonding the handle substrate to the first polysilicon layer in steam at a temperature of approximately 1050° to 1250° C.