US5855693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
Assignee: STMicroelectronics SRL
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Filing: 1995-12-13
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Granted: 1999-01-05
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Expires: 2015-12-13
Abstract
Abstract A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.
Inventors
- 👤 Bruno Murari
- 👤 Flavio Villa
- 👤 Ubaldo Mastromatteo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:06
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
65 words
A wafer of semiconductor material for fabricating integrated devices having a stack of superimposed layers, said wafer comprising: a first silicon layer; a second silicon layer; and an intermediate insulating layer separating said first silicon layer and said second silicon layer; wherein said insulating layer is monocrystalline and is made of a material selected from a group comprising silicon carbide, silicon nitride and ceramic materials.
Claim 2
Dependent Claim
65 words
A wafer of semiconductor material for fabricating integrated devices having a stack of superimposed layers, said wafer comprising: a first silicon layer; a second silicon layer; and an intermediate insulating layer separating said first silicon layer and said second silicon layer; wherein said insulating layer is monocrystalline and is made of a material selected from a group comprising silicon carbide, silicon nitride and ceramic materials.
Claim 3
Dependent Claim
25 words
A wafer as claimed in claim 1, wherein said ceramic material is selected from a group comprising beryllium oxide, aluminum nitride, boron nitride and alumina.
Claim 4
Dependent Claim
18 words
A wafer as claimed in claim 2, wherein said first and second silicon layers are of monocrystalline silicon.
Claim 5
Dependent Claim
23 words
A wafer as claimed in claim 1, further comprising a silicon oxide layer interposed between said insulating layer and said second silicon layer.
Claim 6
Dependent Claim
15 words
A wafer as claimed in claim 4, wherein said silicon oxide layer is TEOS oxide.
Claim 7
Dependent Claim
16 words
A wafer as claimed in claim 4, wherein said silicon oxide layer is a chemical-vapor-deposited oxide.
Claim 8
Dependent Claim
17 words
A wafer as claimed in claim 4, wherein said silicon oxide layer is a thermally grown oxide.
Claim 9
Dependent Claim
22 words
A wafer as claimed in claim 4, wherein said silicon oxide layer has a thickness ranging between 200 Å and 0.2 μm.
Claim 10
Dependent Claim
23 words
A wafer as claimed in claim 1, further comprising a polycrystalline silicon layer interposed between said insulating layer and said second silicon layer.
Claim 11
Dependent Claim
23 words
A wafer as claimed in claim 1, further comprising a silicon oxide layer interposed between said insulating layer and said first silicon layer.
Claim 12
Dependent Claim
17 words
A wafer as claimed in claim 10, wherein said silicon oxide layer is a thermally grown oxide.
Claim 13
Dependent Claim
22 words
A wafer as claimed in claim 1, wherein said insulating layer is a sintered material layer bonded to said first silicon layer.
Claim 14
Dependent Claim
58 words
A substrate for integrated devices formed from a wafer, said wafer comprising: a first silicon layer; second silicon layer; and and intermediate insulating layer separating said first silicon layer and said second silicon layer; wherein said insulating layer is monocrystalline and is made of a material selected from a group comprising silicon carbide, silicon nitride and ceramic materials.
Claim 15
Dependent Claim
58 words
A substrate for integrated devices formed from a wafer, said wafer comprising: a first silicon layer; second silicon layer; and and intermediate insulating layer separating said first silicon layer and said second silicon layer; wherein said insulating layer is monocrystalline and is made of a material selected from a group comprising silicon carbide, silicon nitride and ceramic materials.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-04 | 2002-07-06 | 2003-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-04 | 2006-07-06 | 2007-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-04 | 2010-07-06 | 2011-01-05 | $7700.00 | Window Closed / Lapsed |