US5366923A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonded wafer structure having a buried insulation layer
Assignee: International Business Machines Corp
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Filing: 1993-12-08
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Granted: 1994-11-22
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Expires: 2013-12-08
Abstract
Abstract A wafer structure and a method of making the same, upon which semiconductor devices may be formed, comprises first and second wafers. The first wafer comprises a first substrate having a thin oxide layer formed on a bottom surface thereof, the first substrate having a characteristic thermal expansion coefficient. The second wafer comprises a second substrate having an insulation layer formed on a top surface thereof, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate and further having a high thermal conductivity. The second wafer further comprises a thin oxide layer formed on a top surface of the insulation layer, wherein the first thin oxide layer of the first wafer is bonded to the second thin oxide layer of the second wafer.
Inventors
- 👤 Klaus D. Beyer
- 👤 Chang-Ming Hsieh
- 👤 Louis L. Hsu
- 👤 Tsorng-Dih Yuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:26
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/011; H10W10/014; H10W10/041; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
195 words
A method of producing a wafer structure upon which semiconductor devices may subsequently be formed, said method comprising the steps of: a) forming a first thin silicon oxide layer of a thickness less than 0.05 μm on a bottom surface of a first original substrate of a thickness on the order of 100-650 μm and being substantially free of lattice mismatch defects, the first substrate having a characteristic thermal expansion coefficient; b) depositing a chemical vapor deposited (CVD) diamond insulation layer of a thickness less than 1.0 μm on a top surface of a second original substrate, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate, the insulation layer further having a high thermal conductivity; c) forming a second thin silicon oxide layer of a thickness less than 0.05 μm on a top surface of the insulation layer and planarizing the second thin oxide layer to a prescribed thickness; and d) bonding the first thin oxide layer to the second thin oxide layer to form a single combined thin silicon oxide layer having a thickness in the range of 0.025 to 0.1 μm.
Claim 2
Independent Claim
195 words
A method of producing a wafer structure upon which semiconductor devices may subsequently be formed, said method comprising the steps of: a) forming a first thin silicon oxide layer of a thickness less than 0.05 μm on a bottom surface of a first original substrate of a thickness on the order of 100-650 μm and being substantially free of lattice mismatch defects, the first substrate having a characteristic thermal expansion coefficient; b) depositing a chemical vapor deposited (CVD) diamond insulation layer of a thickness less than 1.0 μm on a top surface of a second original substrate, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate, the insulation layer further having a high thermal conductivity; c) forming a second thin silicon oxide layer of a thickness less than 0.05 μm on a top surface of the insulation layer and planarizing the second thin oxide layer to a prescribed thickness; and d) bonding the first thin oxide layer to the second thin oxide layer to form a single combined thin silicon oxide layer having a thickness in the range of 0.025 to 0.1 μm.
Claim 3
Dependent Claim
30 words
The method of producing a wafer structure according to claim 1, further comprising the step of e) thinning the first substrate of said first wafer down to a desired thickness.
Claim 4
Dependent Claim
36 words
The method of producing a wafer structure according to claim 1, wherein said step of forming a first thin oxide layer on a first substrate comprises forming the first thin oxide layer on a silicon substrate.
Claim 5
Dependent Claim
58 words
The method of producing a wafer structure according to claim 1, further wherein: said step of depositing the CVD diamond insulation layer comprises depositing the insulation layer to have a thickness of 0.5 μm; said step of forming the single combined thin silicon oxide layer comprises forming the thin silicon oxide layer to have a thickness 0.05 μm.
Claim 6
Dependent Claim
30 words
The method of producing a wafer structure according to claim 4, further comprising the step of e) thinning the first substrate of said first wafer down to a desired thickness.
Claim 7
Dependent Claim
38 words
The method of producing a wafer structure according to claim 4, still further wherein said step of forming a first thin oxide layer on a first substrate comprises forming the first thin oxide layer on a silicon substrate.
Claim 8
Independent Claim
201 words
A method of producing a wafer structure upon which semiconductor devices may subsequently be formed, said method comprising the steps of: a) forming a first thin silicon oxide layer of a thickness less than 0.05 μm on a bottom surface of a first original substrate of a thickness on the order of 100-650 μm and being substantially free of lattice mismatch defects, the first substrate having a characteristic thermal expansion coefficient; b) depositing a chemical vapor deposited (CVD) diamond insulation layer of a thickness less than 1.0 μm on a top surface of a second original substrate, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate; c) forming a buffer layer on a top surface of the insulation layer and planarizing the buffer layer to a desired thickness of less than 0.1 μm; d) forming a second thin silicon oxide layer a thickness less than 0.05 μm on a top surface of the buffer layer; and e) bonding the first thin oxide layer to the second thin oxide layer to form a single combined thin silicon oxide layer having a thickness in the range of 0.025 to 0.1 μm.
Claim 9
Independent Claim
201 words
A method of producing a wafer structure upon which semiconductor devices may subsequently be formed, said method comprising the steps of: a) forming a first thin silicon oxide layer of a thickness less than 0.05 μm on a bottom surface of a first original substrate of a thickness on the order of 100-650 μm and being substantially free of lattice mismatch defects, the first substrate having a characteristic thermal expansion coefficient; b) depositing a chemical vapor deposited (CVD) diamond insulation layer of a thickness less than 1.0 μm on a top surface of a second original substrate, the insulation layer having a characteristic thermal expansion coefficient substantially matched with the characteristic thermal expansion coefficient of the first substrate; c) forming a buffer layer on a top surface of the insulation layer and planarizing the buffer layer to a desired thickness of less than 0.1 μm; d) forming a second thin silicon oxide layer a thickness less than 0.05 μm on a top surface of the buffer layer; and e) bonding the first thin oxide layer to the second thin oxide layer to form a single combined thin silicon oxide layer having a thickness in the range of 0.025 to 0.1 μm.
Claim 10
Dependent Claim
30 words
The method of producing a wafer structure according to claim 7, further comprising the step of e) thinning the first substrate of said first wafer down to a desired thickness.
Claim 11
Dependent Claim
36 words
The method of producing a wafer structure according to claim 7, wherein said step of forming a first thin oxide layer on a first substrate comprises forming the first thin oxide layer on a silicon substrate.
Claim 12
Dependent Claim
24 words
The method of producing a wafer structure according to claim 7, wherein said step of forming a buffer layer comprises depositing a polycrystalline layer.
Claim 13
Dependent Claim
19 words
The method of producing a wafer structure according to claim 10, wherein depositing the polycrystalline layer comprises depositing polysilicon.
Claim 14
Dependent Claim
23 words
The method of producing a wafer structure according to claim 7, wherein said step of forming a buffer layer comprises depositing amorphous silicon.
Claim 15
Dependent Claim
60 words
The method of producing a wafer structure according to claim 7, further wherein: said step of depositing the CVD diamond insulation layer comprises depositing the insulation layer to have a thickness of 0.5 μm; and said step of forming the single combined thin silicon oxide layer comprises forming the thin silicon oxide layer to have a thickness of 0.05 μm.
Claim 16
Dependent Claim
30 words
The method of producing a wafer structure according to claim 13, further comprising the step of e) thinning the first substrate of said first wafer down to a prescribed thickness.
Claim 17
Dependent Claim
38 words
The method of producing a wafer structure according to claim 13, still further wherein said step of forming a first thin oxide layer on a first substrate comprises forming the first thin oxide layer on a silicon substrate.
Claim 18
Dependent Claim
26 words
The method of producing a wafer structure according to claim 13, still further wherein said step of forming a buffer layer comprises depositing a polycrystalline layer.
Claim 19
Dependent Claim
21 words
The method of producing a wafer structure according to claim 16, still further wherein depositing the polycrystalline layer comprises depositing polysilicon.
Claim 20
Dependent Claim
25 words
The method of producing a wafer structure according to claim 13, still further wherein said step of forming a buffer layer comprises depositing amorphous silicon.
Claim 21
Dependent Claim
140 words
The methods of producing a wafer structure according to claim 2 further comprising the steps of: f) forming a dielectric layer comprising an oxide/nitride film on a top surface of the first substrate, the dielectric layer acting as a trench masking layer; g) masking isolation trench locations on a top surface of the dielectric layer; h) forming preliminary trenches via etching the first substrate at isolation trench locations down to the bonded oxide layer; i) forming trench sidewalls on the inner surfaces of the preliminary trenches; j) forming secondary trenches via etching through the bonded oxide layer, the insulation layer, and slightly into the substrate layer and leaving the preliminary trench sidewalls intact; k) coating the inner surfaces of the secondary etched trenches with a thin CVD SiO 2 ; and l) filling the secondary trenches with a trench fill.
Claim 22
Dependent Claim
29 words
The method of producing a wafer structure according to claim 19, further comprising the step of: m) planarizing the top surface of the wafer structure to a desired thickness.
Claim 23
Dependent Claim
143 words
The method of producing a wafer structure according to claim 7, further comprising the steps of: f) forming a dielectric layer comprising an oxide/nitride film on a top surface of the first substrate, the dielectric layer acting as a trench masking layer; g) masking isolation trench locations on a top surface of the dielectric layer; h) forming preliminary trenches via etching the first substrate at isolation trench locations down to the bonded oxide layer; i) forming trench sidewalls on the inner surfaces of the preliminary trenches; j) forming secondary trenches via etching through the bonded oxide layer, the buffer layer, the insulation layer, and slightly into the substrate layer and leaving the preliminary trench sidewalls intact; k) coating the inner surfaces of the secondary etched trenches with a thin CVD SiO 2 ; and l) filling the secondary trenches with a trench fill.
Claim 24
Dependent Claim
29 words
The method of producing a wafer structure according to claim 21, further comprising the step of: m) planarizing the top surface of the wafer structure to a desired thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |