US4984052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonded substrate of semiconductor elements having a high withstand voltage
Assignee: Toshiba Corp
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Filing: 1989-10-10
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Granted: 1991-01-08
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Expires: 2009-10-10
Abstract
Abstract A bonded substrate comprises a first semiconductor substrate in which a plurality of semiconductor elements are formed, a second semiconductor substrate adhered to the first semiconductor substrate so as to support it by means of an insulating layer interposed therebetween, a first semi-insulating polysilicon layer interposed between the first semiconductor substrate and the insulating layer, and a second semi-insulating polysilicon layer interposed between the insulating layer and the second semiconductor substrate. The semi-insulating polysilicon layers serve to reduce the voltage applied to the insulating layer and to prevent the insulating layer from being etched.
Inventors
- 👤 Yutaka Koshino
- 👤 Yoshiro Baba
- 👤 Akihiko Osawa
- 👤 Satoshi Yanagiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:45
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/061; H10W10/10; H10W10/181; H10W10/40; H10P90/1914; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
129 words
A bonded substrate of semiconductor elements having a high withstand voltage, comprising: a first semiconductor substrate having a plurality of semiconductor elements disposed therein and thereon; a second semiconductor substrate bonded to a rear surface of the first semiconductor substrate with a first insulating layer provided therebetween; a first semi-insulating polysilicon layer provided between said first semiconductor substrate and said first insulating layer; a second semi-insulating polysilicon layer provided between said second semiconductor substrate and said first insulating layer; a trench formed in the first semiconductor substrate and extending through the first semiconductor substrate to the first semi-insulating polysilicon layer; a second insulating layer provided on an inner wall of the trench; and a polysilicon layer provided on the second insulating layer covering the inner wall of the trench.
Claim 2
Dependent Claim
129 words
A bonded substrate of semiconductor elements having a high withstand voltage, comprising: a first semiconductor substrate having a plurality of semiconductor elements disposed therein and thereon; a second semiconductor substrate bonded to a rear surface of the first semiconductor substrate with a first insulating layer provided therebetween; a first semi-insulating polysilicon layer provided between said first semiconductor substrate and said first insulating layer; a second semi-insulating polysilicon layer provided between said second semiconductor substrate and said first insulating layer; a trench formed in the first semiconductor substrate and extending through the first semiconductor substrate to the first semi-insulating polysilicon layer; a second insulating layer provided on an inner wall of the trench; and a polysilicon layer provided on the second insulating layer covering the inner wall of the trench.
Claim 3
Dependent Claim
19 words
The bonded substrate according to claim 1, wherein said first and second semiconductor substrates are each formed of silicon.
Claim 4
Dependent Claim
18 words
The bonded substrate according to claim 1, wherein said insulating layer is formed of an SiO 2 layer.
Claim 5
Dependent Claim
22 words
The bonded substrate according to claim 1, wherein said first insulating layer is an SiO 2 layer containing boron as an impurity.
Claim 6
Dependent Claim
20 words
The bonded substrate according to claim 1, wherein said insulating layer is formed of a phosphorous doped SiO 2 layer.
Claim 7
Dependent Claim
20 words
The bonded substrate according to claim 1, wherein said insulating layer is formed of an arsenic doped SiO 2 layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |